Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28 [micro sign]m

Illek, S.; Ultsch, A.; Borchert, B.; Egorov, A. Yu.; Riechert, H.

doi:10.1049/el:20000586

Cited by 55 publications

(19 citation statements)

References 4 publications

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“…Figure 2 shows the temperature dependence of light-current characteristics for GaInNAsSb lasers. The low Ith of 12.4mA at 25°C was obtained under CW operation, which is the almost same value with the best results ever reported for GaInNAs-based narrow stripe lasers [5,6,13]. The lasing wavelength is 1.258tm as shown in the inset of figure 2.…”

Section: Invited Papersupporting

confidence: 85%

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Low-threshold GaInNAsSb quantum well lasers

Shimizu

Setiagung

Kumada

et al. 2002

Novel in-Plane Semiconductor Lasers

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SLong wavelengthGaInNAsSb quantum well lasers that include small amount of Sb were successfully grown by gas-source molecular beam epitaxy (GSMBE). We confirmed that Sb reacts in GaInNAs/GaAs system like a surfactant, which increase the critical thickness at which the growth mode changes from the 2-dimentional (2-D) growth to the 3-dimentional (3-D) growth. The GaInNAsSb/GaAs lasers oscillated under CW operation at 1.258im at room temperature. The low CW threshold current of 12.4mA and high characteristic temperature (T0) of 157K were obtained for GaInNAsSb/GaAs lasers, which is the best result for GaInNAs-based narrow stripe lasers. To extend the lasing wavelength over 1.3tm with keeping the threshold current density low, we adopted GaNAs barriers instead of GaAs barriers. We obtained the very low threshold current density of 570A1cm2 at 9OOm-long cavity with the lasing wavelength of 1.3O8tm. We can say that GaInNAsSb lasers are very promising material for realizing peltier-free devices for access network.

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Section: Invited Papersupporting

confidence: 85%

“…GaInNAs [1][2][3][4][5][6][7], GaAsSb [8], and InAs quantum dots (QD) [9,10] have been reported to realize this wavelength on GaAs substrates. Among the candidates, the large conduction band offset can be realized for GaInNAs, which were proposed by Kondow et a!…”

Section: Introductionmentioning

confidence: 99%

Low-threshold GaInNAsSb quantum well lasers

Shimizu

Setiagung

Kumada

et al. 2002

Novel in-Plane Semiconductor Lasers

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show abstract

“…The dilute nitride semiconductor alloy, GaInNAs, has recently received much attention for their potential applications to highefficiency multi-junction tandem solar cells [1,2], and GaAs-based long-wavelength optoelectronic devices [3,4]. The incorporation of nitrogen into GaAs enables to modulate the energy bandgap in 1.2-1.6 mm range.…”

Section: Introductionmentioning

confidence: 99%

Improvement of GaInNAsSb films fabricated by atomic hydrogen-assisted molecular beam epitaxy

Miyashita

Ichikawa

Okada

2009

Journal of Crystal Growth

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“…In addition, they are compatible with the well-developed AlGaAs/GaAs distributed Bragg reflector for vertical surface emitting laser [1][2][3]. Nowadays, several studies have shown the feasibility of high-performance 1.3 mm GaInNAs/GaAs quantum well (QW) lasers [4,5]. Efforts are now dedicated in obtaining high-quality GaInNAs materials emitting in the 1.55 mm range [6][7][8].…”

Section: Introductionmentioning

confidence: 99%