Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001)

Dhingra, Pankul; Su, Patrick; Li, Brian D.; Hool, Ryan D.; Muhowski, Aaron J.; Kim, Mi‐Jung; Wasserman, D.; Dallesasse, John M.; Lee, Minjoo Larry

doi:10.1364/optica.443979

Cited by 16 publications

(8 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Properly accounting for these effects in laser design and growth can yield improved laser performance and reliability. Our work also anticipates the complex effects of dislocations in the next generation of III–V lasers grown directly on silicon beyond datacom wavelengths such as recent works in the visible [ 30 ] and mid‐infrared. [ 31 ]…”

Section: Introductionmentioning

confidence: 84%

Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon

Hughes

Kusch

Selvidge

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

This study probes the extent to which dislocations reduce carrier lifetimes and alter growth morphology and luminescence in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic‐integrated circuits. Around 20%–30% shorter carrier lifetimes are found at spatially resolved individual dislocations at room temperature using time‐resolved cathodoluminescence spectroscopy, highlighting the strong nonradiative impact of dislocations even against the three‐dimensional confinement of QDs. Beyond these direct effects of increased nonradiative recombination, it is found that misfit dislocations in the defect filter layers employed during III–V/Si growth alter the QD growth environment to induce a crosshatch‐like variation in QD emission color and intensity when the filter layer is positioned sufficiently close to the QD emitter layer. Sessile threading dislocations generate even more egregious hillock defects that also reduce emission intensities by altering layer thicknesses, as measured by transmission electron microscopy and atom probe tomography. This work presents a more complete picture of the impacts of dislocations relevant to the development of light sources for scalable silicon photonic integrated circuits.

show abstract

Section: Introductionmentioning

confidence: 84%

Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon

Hughes

Kusch

Selvidge

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…In the orthogonal [110] direction (figure 9(d)), bond distortion between the dimer pairs could encourage easier aggregation orthogonal to the Qdash direction. Through engineering the size/shape of the dots and their surrounding cladding matrix, QD/Qdash lasers can access a wide range of wavelengths [61,62,[68][69][70]. Combining the QD/Qdash gain medium with optimized III-V/Si templates that exhibit low TD density, it becomes feasible to grow and fabricate diode lasers on Si ranging from 700 nm to 2 µm in wavelength (see figure 8).…”

Section: Quantum Dot and Quantum Dash Diode Lasers Grown On Simentioning

confidence: 99%

Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon

Yan,

2024

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Epitaxial integration of III–V optical functionalities on silicon (Si) is the key to complement current Si photonics, facilitating the development of scalable, compact photonic integrated circuits. Here we aim to outline this field, focusing on the III–V semiconductor materials and the III–V lasers grown on Si. This paper is divided into two main parts: in the first part, we discuss III–V materials grown on Si, including the low-index {hhl} facets, (001) Si surface and anti-phase boundary, and dislocation engineering. The second part centres at III–V lasers grown on Si: we will first discuss III–V lasers that are highly tolerant to dislocations, including quantum dot/dash diode lasers, interband cascade, and quantum cascade lasers grown on Si from near infrared to long-wave infrared. We then move to the selective heteroepitaxy of low dislocation density III–Vs for the bufferless lasers. Finally, we review the III–V nanowire photonic crystal lasers grown on Si, which offers a different approach to overcome material mismatch and grow dislocation free III–V structures on silicon. We start with briefly introducing the recent progress of each technology, followed with a discussion of its key advantages, research challenge and opportunities.

show abstract

“…As monolithic integration of III-V laser and silicon photonic components has always been a much-desired functionality, direct epitaxial growth of III-V quantum-dot (QD) lasers on silicon substrate has been extensively investigated with dramatic progress recent years 13 – 20 . Benefiting from the technical development of high-quality III-V material growth on silicon 21 – 25 , various silicon-based laser structures have been demonstrated with outstanding performance, including distributed feedback (DFB) lasers 26 – 29 , microcavity lasers 30 – 32 and mode-locked lasers 33 – 36 .…”

Section: Introductionmentioning

confidence: 99%

Monolithic integration of embedded III-V lasers on SOI

Wei

Yang

et al. 2023

Light Sci Appl

View full text Add to dashboard Cite

Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration, which can provide considerable economical, energy-efficient and foundry-scalable on-chip light sources, that has not been reported yet. Here, we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on trenched silicon-on-insulator (SOI) substrate, enabling monolithic integration with butt-coupled silicon waveguides. By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via hybrid molecular beam epitaxy (MBE), high-performance embedded InAs QD lasers with monolithically out-coupled silicon waveguide are achieved on such template. By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture, embedded III-V lasers on SOI with continuous-wave lasing up to 85 °C are obtained. The maximum output power of 6.8 mW can be measured from the end tip of the butt-coupled silicon waveguides, with estimated coupling efficiency of approximately -6.7 dB. The results presented here provide a scalable and low-cost epitaxial method for the realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration.

show abstract

Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001)

Cited by 16 publications

References 51 publications

Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon

Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon

Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon

Monolithic integration of embedded III-V lasers on SOI

Contact Info

Product

Resources

About