Low Threshold GaInAsP Lasers with Semiconductor/Air Distributed Bragg Reflector   Fabricated by Inductively Coupled Plasma Etching

Ariga, M.; Sekido, Y.; Sakai, Atsushi; Baba, Toshihiko; Matsutani, Akihiro; Koyama, Fumio; Iga, Kenichi

doi:10.1143/jjap.39.3406

Cited by 16 publications

(7 citation statements)

References 8 publications

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“…Critical processes in the fabrication of the optical waveguides include lithography, masking, and etching. 7 Whaley et al reported the sidewall roughness ͑SWR͒ of InGaAsP/InP waveguides etched using RIE in CH 4 /H 2 /Ar gas mixture, and the roughness calculated from scanning electron micrographs ͑SEMs͒ was in the range from 12 to 31 nm. A nonideal sidewall profile with roughness causes scattering loss in waveguides, and this is a source of optical loss in deep-etched waveguides.…”

Section: Introductionmentioning

confidence: 99%

Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for low loss optical waveguide applications

Bae

Zhao

Jang

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inFabrication of high-aspect-ratio double-slot photonic crystal waveguide in InP heterostructure by inductively coupled plasma etching using ultra-low pressure AIP Advances 3, 022122 (2013); 10.1063/1.4793082Characterization of hydrogen silsesquioxane as a Cl 2 ∕ B Cl 3 inductively coupled plasma etch mask for air-clad InP-based quantum well waveguide fabrication Effect of mask thickness on the nanoscale sidewall roughness and optical scattering losses of deep-etched In P ∕ In Ga As P high mesa waveguidesThe effects of etch depth on the sidewall roughness ͑SWR͒ of InGaAsP/InP waveguides fabricated utilizing two types of masks, NiCr/SiO 2 and SiO 2 /NiCr/SiO 2 , were investigated with an atomic force microscopy. All the waveguides were etched in an inductively coupled plasma-reactive ion etching to depths ranging from 4 to 8 m. The root-mean-square ͑rms͒ sidewall roughness values of the waveguides etched to depths of 4, 6, and 8 m with SiO 2 remasking layer were measured to be 2.97, 3.45, and 3.64 nm, respectively. Also the rms SWR values of the waveguides etched without the remasking layer were 3.2, 3.65, and 3.89 nm, respectively. The SiO 2 thin remasking layer deposited on NiCr/SiO 2 mask structure reduced the SWR of the waveguides. Measurements indicated that SWR increased with etch time, which is ascribed to an increase in mask erosion during etching.

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Section: Introductionmentioning

confidence: 99%

Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for low loss optical waveguide applications

Bae

Zhao

Jang

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…These structures, often made by dry etch, can provide a post-epitaxial adjustment to strengthen device performance, and also eliminate tedious dielectric deposition steps. Single mode lasers and wavelength tunable lasers were demonstrated previously using this idea [15]- [17], [20]. The dry etch process needs to rely on precise photolithography which can be difficult if the structure is in sub-micron regime and the etch step has to be carefully included in the process.…”

Section: Introductionmentioning

confidence: 99%

Compact Photonic Integrated Chip for Tunable Microwave Generation

Chien

et al. 2014

IEEE Photon. Technol. Lett.

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A tunable microwave generation is demonstrated by monolithically integrated photonic chip, which combines a mirror section and two distributed feedback (DFB) lasers. The focus ion beam technology was employed to achieve high-quality air/semiconductor slab for the mirror. Two DFB lasers (named slave and master lasers, respectively) can operate in a single fundamental mode when they are individually pumped. A microwave signal with the differential frequency between the two lasers can be obtained through optical heterodyning. A tunable microwave signal up to 25.5 GHz can be generated by adjusting the injected currents of the two DFB lasers. A four-wave mixing spectrum was measured and the linewidth of the generated radio frequency signal is 1.9 MHz.

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“…2 Due to their photon recycling effect, the threshold current of quantum well light-emitting devices can be reduced. 3,4 Using a birefringent distributed Bragg reflector ͑DBR͒, polarization dependent reflectivity at the resonant wavelength can be achieved. 5 For visible light emission from Si/SiO 2 superlattices, a suitably designed planar microcavity can considerably increase the external efficiency of luminescence as well as decrease the bandwidth and selectively tune the peak wavelength.…”

Section: Introductionmentioning

confidence: 99%

Coupling between the exciton and cavity modes in a GaAs∕GaAlAs asymmetric microcavity structure

Lin

Chou

Huang

et al. 2005

Journal of Applied Physics

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The coupling effect between the cavity mode and excitonic states in a GaAs∕GaAlAs asymmetric microcavity structure was studied via angle and temperature dependent reflectance and piezoreflectance (PzR) measurements in the angular range 10°<θinc<60° and temperature range 20K<T<300K. The so-called cavity mode (CM) consists of photonic waves confined in the microcavity, and shifts to higher energy with increasing angle or decreasing temperature, whereas the angle independent excitonic states of the quantum well structure shift to higher energy with decreasing temperature. By varying the angle of incidence of the probe beam and temperature, the coupling strength between the excitonic transitions and CM can be tuned. The related PzR features have shown significant enhancement when the cavity mode matches up with the excitonic transitions. A detailed experimental study of the resonance enhancement effect between the excitonic transitions and CM is presented.

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Low Threshold GaInAsP Lasers with Semiconductor/Air Distributed Bragg Reflector Fabricated by Inductively Coupled Plasma Etching

Cited by 16 publications

References 8 publications

Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for low loss optical waveguide applications

Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for low loss optical waveguide applications

Compact Photonic Integrated Chip for Tunable Microwave Generation

Coupling between the exciton and cavity modes in a GaAs∕GaAlAs asymmetric microcavity structure

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