2004
DOI: 10.1070/qe2004v034n10abeh002752
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Low-threshold electron-beam-pumped green quantum-well heterostructure semiconductor lasers

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Cited by 12 publications
(6 citation statements)
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“…Earlier use of II-VI compounds [11][12][13][14][15][16][17][18][19][20] for the fruition of blue-green light-emitting diodes (LEDs) was hampered by the nonavailability of good-quality crystals and difficulties of managing doping. [21][22][23][24][25][26][27][28][29][30][31][32] Recent progress in epitaxial techniques has offered preparation of high-quality epilayers and heterostructures on convenient and nearly lattice-matched III-V substrates. Depending upon the growth conditions, it is possible to stabilize one of the two crystal structures either by strain, choosing proper substrates and/or buffer layers, or by controlling the growth temperatures.…”
Section: Introductionmentioning
confidence: 99%
“…Earlier use of II-VI compounds [11][12][13][14][15][16][17][18][19][20] for the fruition of blue-green light-emitting diodes (LEDs) was hampered by the nonavailability of good-quality crystals and difficulties of managing doping. [21][22][23][24][25][26][27][28][29][30][31][32] Recent progress in epitaxial techniques has offered preparation of high-quality epilayers and heterostructures on convenient and nearly lattice-matched III-V substrates. Depending upon the growth conditions, it is possible to stabilize one of the two crystal structures either by strain, choosing proper substrates and/or buffer layers, or by controlling the growth temperatures.…”
Section: Introductionmentioning
confidence: 99%
“…[15][16][17][18][19][20][21][22][23][24][25][26][27] Earlier, the applications of II-VI materials for photonic devices were hampered primarily by the availability of poor-quality crystals and the difficulty of managing doping. [28][29][30][31][32][33] Progress in the modern crystal growth techniques such as metalorganic vapor phase epitaxy (MOVPE), 34 metalorganic chemical vapor deposition, 35 molecular beam epitaxy (MBE), 36,37 chemical beam epitaxy, 38 and hot wall epitaxy 39 has offered higher quality and greater versatility in the preparation of thin films with controlled doping on many convenient substrates. [40][41][42] The ability to prepare zinc-cadmium (mercury)-based binary [AB, with A = Zn, Cd, and Mn (Hg) and B = S, Se, and Te] compounds [43][44][45] and thin films of ternary A 1−x B x C (e.g., Cd 1−x Zn x Te, CdTe 1−x Se x , etc.)…”
Section: Introductionmentioning
confidence: 99%
“…11-15͒ was the only material used for generating light in the 460-540 nm wavelength range. However, the success in the development of blue-green lasers remained limited by the relatively short lifetime caused by various unknown defects [16][17][18][19][20][21] in the alloys of ZnSe-related heterostructures. A renewed interest in the II-VI-based material systems arose [22][23][24][25][26][27] recently when a partial substitution of Zn by Be in Zn͑Mg͒Se and Zn͑Mg͒Te not only improved the fundamental properties but also resulted in a significant increase in the covalent bonding, higher cohesive energy, larger band gap, and higher p-type dopability in these alloys.…”
Section: Introductionmentioning
confidence: 99%