“…[15][16][17][18][19][20][21][22][23][24][25][26][27] Earlier, the applications of II-VI materials for photonic devices were hampered primarily by the availability of poor-quality crystals and the difficulty of managing doping. [28][29][30][31][32][33] Progress in the modern crystal growth techniques such as metalorganic vapor phase epitaxy (MOVPE), 34 metalorganic chemical vapor deposition, 35 molecular beam epitaxy (MBE), 36,37 chemical beam epitaxy, 38 and hot wall epitaxy 39 has offered higher quality and greater versatility in the preparation of thin films with controlled doping on many convenient substrates. [40][41][42] The ability to prepare zinc-cadmium (mercury)-based binary [AB, with A = Zn, Cd, and Mn (Hg) and B = S, Se, and Te] compounds [43][44][45] and thin films of ternary A 1−x B x C (e.g., Cd 1−x Zn x Te, CdTe 1−x Se x , etc.)…”