Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure

Stintz, A.; Liu, G.T.; Li, H.; Lester, L. F.; Malloy, K.J.

doi:10.1109/68.849053

Cited by 140 publications

(52 citation statements)

References 9 publications

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“…One of the widely used techniques for the realization of a longwavelength photodetectors is to embed or cap InAs QDs with a quaternary layer and ternary layer. It is reported that quaternary (InAlGaAs) capping layer, which serves as a strain-induced phase-separation alloy, prevents the outdiffusion of indium during the growth process [18][19][20], and the ternary (InGaAs) capping layer effect in the dot islands differs in size, shape, chemical composition, and lattice strain [21,22]. Both quaternary-and ternary-capping layers help in increasing the QD size.…”

Section: Resultsmentioning

confidence: 99%

Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors

et al. 2014

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We investigate and compare the performance of 30 layers strain-coupled quantum dot (SCQD) infrared photodetectors capped with one of two different layers: a quaternary (In 0.21 Al 0.21 Ga 0.58 As) or ternary (In 0.15 Ga 0.85 As) alloy of 30 Å and a GaAs layer with a thickness of 120-150 Å . Measurements of optical properties, spectral responsivity, and cross-sectional transmission electron microscopy were conducted. Results showed that quaternary capping yielded more superior multilayer QD infrared photodetectors than ternary capping. Quaternary capping resulted in enhanced dot size, order, and uniformity of the QD array. The presence of Al in the capped layer helped in the reduction in dark current density and spectral linewidth as well as led to higher electron confinement of the QDs and enhanced device detectivity. The vertically ordered SCQD system with quaternary capping exhibited higher peak detectivity (*10 10 cm Hz 1/2 /W) than that with ternary capping (*10 7 cm Hz 1/2 /W). In addition, a very low noise current density of *10 -16 A/cm 2 Hz 1/2 at 77 K was achieved with quaternary-capped QDs.

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Section: Resultsmentioning

confidence: 99%

Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors

et al. 2014

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“…The most interesting applications of these structures are usually related to semiconductor lasers and optical amplifiers [1], where self-assembled quantum dots (QDs) are used as an active region, providing for low threshold current [2], low chirp and small line width enhancement factor [3]. However, studies of QDs lasers are limited on GaAs substrates with emission wavelength smaller than 1.3 µm.…”

Section: Introductionmentioning

confidence: 99%

Intersubband Absorption in Quantum Dash Nanostructures

Crnjanski

Gvozdić

2009

Acta Phys. Pol. A

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The band structure and corresponding intersubband absorption coefficient of quantum dash structures are modeled using a self-consistent single-band effective-mass approach and dipole approximation. Size fluctuation of the quantum dash ensemble, described with Gaussian distribution, is included in the model and its effects on the absorption spectrum are analyzed. The profile of the absorption spectrum is suitable for fitting with a sum of Gaussian functions. We find that the quantum dash ensemble has a pronounced and broad absorption spectrum in mid-infrared region, which becomes broader and more asymmetric with increase of the size fluctuation. In addition, for very large size fluctuation, the spectrum becomes flattened in relatively wide wavelength range.

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“…A novel type of quantum dot (QD) laser with the-dotin-a-well (DWELL) structure based on InAs QDs grown in the strained InGaAs quantum well (QW) characterized by an extremely low threshold current density of 42.6A · cm −2 and a lasing wavelength near 1.3µm has been recently proposed [1]. However, the QDWELL laser modulation bandwidth of 7GHz is limited by the relaxation oscillation (RO) frequency.…”

Section: Introductionmentioning

confidence: 99%

Quantum dot-in-a-well (QDWELL) laser dynamics under optical injection

Ezra

Lembrikov

2013

Opt Quant Electron

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Abstract-We investigated theoretically the optical injection influence on the dynamics of a quantum dot (QD) in a quantum well (QDWELL) laser. The carrier dynamics is synchronized due to the optical injection, and QDWELL laser manifests a high performance at repetition frequencies up to 25GHz. I. INTRODUCTIONA novel type of quantum dot (QD) laser with the-dotin-a-well (DWELL) structure based on InAs QDs grown in the strained InGaAs quantum well (QW) characterized by an extremely low threshold current density of 42.6A · cm −2 and a lasing wavelength near 1.3µm has been recently proposed [1]. However, the QDWELL laser modulation bandwidth of 7GHz is limited by the relaxation oscillation (RO) frequency. In order to improve the performance of directly modulated semiconductor lasers, the optical injection locking (OIL) of semiconductor lasers can be used providing a single-mode regime with side-mode suppression, strongly enhanced RO frequency, enhanced bandwidth, reduced nonlinearity, reduced relative intensity noise (RIN), reduced chirp, increased link gain, and near-single-sideband modulation [2]. The complicated dynamics of optically injected QDWELL lasers has been investigated both theoretically and experimentally using the Lüdge-Schöll (LS) model [3], [4]. We have shown that due to the optical injection, the electron and hole dynamics in QW and QDs is synchronized, and consequently, the QDWELL laser demonstrates a high performance in the large signal regime for the moderate bias current level at the repetition frequencies up to 25GHz.

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Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure

Cited by 140 publications

References 9 publications

Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors

Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors

Intersubband Absorption in Quantum Dash Nanostructures

Quantum dot-in-a-well (QDWELL) laser dynamics under optical injection

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