Low thermal resistance high-speed top-emitting 980-nm VCSELs

Al-Omari, A. N.; Carey, Glen P.; Hallstein, S.; Watson, Jason P.; Dang, G.; Lear, K.L.

doi:10.1109/lpt.2006.875059

Cited by 70 publications

(47 citation statements)

References 8 publications

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“…Следует отметить, что данная концепция применима лишь в области прозрачности используемой подложки для лазерного излучения. Тем не менее данный подход был модифицирован для ВИЛ с выводом света вверх: на поверхность и на боковые стенки мезы РБО p-типа осаждался кольцевой слой меди толщиной 2 µm (так называемый медный теплоотвод), что позволило не только снизить тепловое сопротивление на 50% и увеличить выходную мощность на 130%, но и повысить частоту эффективной модуляции на 40% до 10 GHz [99]. Однако паразитная емкость, формирующаяся на тонком слое диэлектрика между n-контактом и медным теплоот-водом, вносит вклад в емкость контактных площадок и ограничивает паразитную частоту отсечки прибора, а оптимизация топологии медного теплоотвода дает лишь незначительный прирост в частоте эффективной модуляции, несмотря на уменьшение паразитной емкости в 2.5 раза [39].…”

Section: тепловые эффектыunclassified

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called “vertical-cavity surface-emitting lasers”) under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ∼30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

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Section: тепловые эффектыunclassified

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Блохин¹,

Малеев²,

Бобров³

et al. 2018

Письма В Журнал Технической Физики

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“…If one assumes the model of a uniform temperature disc, representing the active region of an oxide-confined VCSEL, on a homogeneous, isotropic, semi-infinite substrate, the thermal resistance can be given by the simple formula [120]:…”

Section: Heat Generation and Thermal Resistance Of Oxide-confined Vcselsmentioning

confidence: 99%

High Speed VCSELs for Optical Interconnects

Mutig

2011

Springer Theses

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The forecast for the serial transmission speeds used for data communication s ystems is a continued exponential increase with time, directly in concert with silicon integrated circuit scaling and in response to human society's perpetual hunger for massive increases in bandwidth. Electrical interfaces for single channel bit rates beyond 10 Gbit/s are being standardized for a variety of applications, including for example (with an expected data -rate): Fibre Channel FC32G (34 Gbit/s), InfiniBand (20 Gbit/s), common electrical interface CEI (25-28 Gbit/s), and universal serial bus protocols USB 3.0 (up to 25 Gbit/s). As a result, the fundamental electro-magnetic limitations of copper wire-based links at bit rates >10 Gbit/s make fiber based optics for data communication indispensable at distances >1 m. At shorter distances, problems associated with electrical transmission lines at such high frequencies, e. g. high power consumption, strong signal attenuation, signal distortion and electromagnetic interference, lead to unstoppable and progressive penetration of optical communication links into traditional copper interconnect markets. These trends greatly expand the applications of vertical cavity surface emitting lasers (VCSELs) and VCSEL arrays as very inexpensive, efficient, reliable, readily manufacturable and compact laser light sources for next-generations of fiber-optic, free-space, board-to-board, module-to-module, chip-to-chip and on-chip interconnects and related information systems and networks.Already today oxide-confined GaAs-based VCSELs emitting at 850 nm are the key components for low cost high speed local and storage area network (LAN/SAN) data communication systems. Furthermore, active optical cable links for short-reach computer and consumer applications, for example USB, DisplayPort, and HDMI standards, are increasingly based on VCSELs operating in the near-infrared spectral range. Immense research and development effort all around the world resulted in the great progress in the area of highspeed GaAs-based VCSELs in the last few years. At the standard wavelength of 850 nm room temperature error free data transmission at the bit rate of 32 Gbit/s has been demonstrated in 2009. Also at longer wavelengths bit rates of 35 Gbit/s (980 nm) and 40 Gbit/s (1100 nm) have been achieved at room temperature using GaAs-based VCSELs, while the latter device was based on the buried tunnel junction, requiring additional epitaxial growth step and making the laser fabrication more complicated. While the wavelength of 850 nm is the current standard for LAN/SAN applications, potential competitive standards at 980 and 1100 nm have many critical advantages for very and ultra short reach systems. This includes smaller operational voltages due to the lower photon energy, which are decisive for complementary metal oxide semiconductor (CMOS) drivers, transparency of the GaAs substrate, which is important for bottom-emitting lasers, and deeper potential wells, suppressing the escape of injected non-equilibrium carr...

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“…The R th is estimated by using the relation, 13 R th = ͑T src − T snk ͒ / P el , where T src is the heat source temperature, i.e., the hottest temperature in the VCIEL. Its value is 0.79°C / mW, which is even lower than state-of-the-art high temperature VCSELs with the same current aperture diameter 8 and is highly beneficial for high speed operation and long life time. 8 In conclusion, we have suggested a hybrid laser structure for silicon photonics that exploits the properties of HCGs.…”

mentioning

confidence: 91%

“…Its value is 0.79°C / mW, which is even lower than state-of-the-art high temperature VCSELs with the same current aperture diameter 8 and is highly beneficial for high speed operation and long life time. 8 In conclusion, we have suggested a hybrid laser structure for silicon photonics that exploits the properties of HCGs. The laser is based on hybrid wafer bonding but does not require alignment.…”

mentioning

confidence: 91%

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Silicon-photonics light source realized by III–V/Si-grating-mirror laser

Chung

Mørk

2010

Applied Physics Letters

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A III–V/Si vertical-cavity in-plane-emitting laser structure is suggested and numerically investigated. This hybrid laser consists of a distributed Bragg reflector, a III–V active region, and a high-index-contrast grating (HCG) connected to an in-plane output waveguide. The HCG and the output waveguide are made in the Si layer of a silicon-on-insulator wafer by using Si-electronics-compatible processing. The HCG works as a highly-reflective mirror for vertical resonance and at the same time routes light to the in-plane output waveguide. Numerical simulations show superior performance compared to existing silicon light sources.

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Low thermal resistance high-speed top-emitting 980-nm VCSELs

Cited by 70 publications

References 8 publications

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

Высокоскоростные Полупроводниковые Вертикально-Излучающие Лазеры Для Оптических Систем Передачи Данных (Обзор)

High Speed VCSELs for Optical Interconnects

Silicon-photonics light source realized by III–V/Si-grating-mirror laser

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