Bismuth vanadate (BiVO4) is a well-sought candidate
as a photoanode in photoelectrochemical (PEC) water splitting. The
mismatch between the V/Bi ratio affects the photocatalytic efficiency
of BiVO4 films fabricated using the large-area sputtering
method. We adopt a facile method to finely control the V/Bi ratio
in sputtered films by changing the oxygen partial pressure. We observed
the formation of various phases, with a change of V/Bi ratio in the
films ranging from 0.5 to 2, and found that the segregated V2O5 acts as a self-flux in improving the crystallinity
of BiVO4, resulting in a long carrier lifetime. With the
prolonged carrier lifetime from 0.098 to 0.211 ns, the optimized films
realize a photocurrent density of 1.97 mA/cm2 at 1.23 V
versus reversible hydrogen electrode. However, V2O5 itself does not exhibit a lifetime comparable to BiVO4, which implies that an excess amount of V2O5 is detrimental to PEC performance. These findings point to
the significance of a slightly V-rich growth environment for advancing
the PEC performance of BiVO4 materials. Our work provides
insights into the growth of high-quality crystals by controlling composition
in other multielement oxides.