Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Abstract

In article number http://doi.wiley.com/10.1002/pssr.202100028, Jiyoung Kim, Si Joon Kim, and co‐workers comprehensively review the various factors such as doping effects, deposition method, annealing method and conditions, and substrate material for obtaining fluorite‐structure ferroelectrics with low‐thermal‐budget processes (400 °C or less). These low‐thermal‐budget processes facilitate not only the integration of ferroelectric circuits in the back‐end‐of‐line, but also the applications to flexible and wearable electronics.

Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia‐Zirconia by Engineering of Tungsten Oxide Bottom Electrodes

“…After optimization, a maximum 2P r of 46 µC cm − 2 and an endurance of 10 8 cycles was achieved with BEOL‐like annealing, which can compete with ALD‐deposited HZO annealed at a similar thermal budget. [ 34,36,37 ] WO x bottom electrodes can maintain similar ferroelectric properties at different oxygen flow ratios during deposition. This is beneficial to ease the processing restrictions of the FeCap deposition.…”