Low‐thermal budget flash light annealing for Al₂O₃ surface passivation

Abstract

This value is achieved due to a very low interface trap density of below 1010 eV–1 cm–2 and a fixed charge density of (2–3) × 1012 cm–2. In contrast, plasma ALD‐grown Al2O3 layers only reach carrier lifetimes of about 1 ms. This is mainly caused by a more than 10 times higher density of interface traps, and thus, inferior chemical passivation. The strong influence of the deposition parameters is explained by the limitation of hydrogen transport in Al2O3 during low‐thermal budget annealing. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)