Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO
Hojoon Ryu,
Junzhe Kang,
Minseong Park
et al.
Abstract:In
this paper, we demonstrate low-thermal-budget ferroelectric
field-effect transistors (FeFETs) based on the two-dimensional ferroelectric
CuInP2S6 (CIPS) and oxide semiconductor InZnO
(IZO). The CIPS/IZO FeFETs exhibit nonvolatile memory windows of ∼1
V, low off-state drain currents, and high carrier mobilities. The
ferroelectric CIPS layer serves a dual purpose by providing electrostatic
doping in IZO and acting as a passivation layer for the IZO channel.
We also investigate the CIPS/IZO FeFETs as artificia… Show more
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