Low Temperature Wafer-Level Metal Thermo-Compression Bonding Technology for 3D Integration

Fan, Jiawei; Tan, Chuan Seng

doi:10.5772/48216

Cited by 13 publications

(11 citation statements)

References 31 publications

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“…Moreover, metals demonstrate good electrical and thermal conductivity. Metal thermocompression bonding have been demonstrated for 3D integration 8 , packaging of micro-valves 9 , IR sensors 10 and accelerometers 11 .…”

mentioning

confidence: 99%

Interfacial characterization of Al-Al thermocompression bonds

Malik

Carvalho

Poppe

et al. 2016

Journal of Applied Physics

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Interfaces formed by Al-Al thermocompression bonding were studied by transmission electron microscopy. Si wafer pairs were bonded using Al films deposited on Si or SiO2 as intermediate bonding media. A bond force of 36 or 60 kN at bonding temperatures ranging from 400-550 °C was applied for a duration of 60 min. Differences in bonded interfaces of 200 µm wide sealing frames were investigated. Interface having voids was observed for bonding with 36 kN at 400 °C for Al deposited both on Si and on SiO2. However, the dicing yield was 33 % for Al on Si and 98 % for Al on SiO2, attesting for the higher quality of the latter bonds. Both a bond force of 60 kN applied at 400 °C and a bond force of 36 kN applied at 550 °C resulted in completely bonded frames with dicing yields of, respectively, 100 and 96 %. A high density of long dislocations in the Al grains was observed for the 60 kN case, while the higher temperature resulted in grain boundary rotation away from the original Al-Al interface towards more stable configurations.Possible bonding mechanisms and reasons for the large difference in bonding quality of the Al films deposited on Si or SiO2 are discussed.3

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mentioning

confidence: 99%

Interfacial characterization of Al-Al thermocompression bonds

Malik

Carvalho

Poppe

et al. 2016

Journal of Applied Physics

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“…Firstly, a grinding is used to thoroughly reduce the wafer thickness by 8 µm on the front side and by 48 µm on the back side. To ensure that the roughness caused by the grinding does not affect the bonding [26], a polishing step performed by chemical-mechanical polishing (CMP) is necessary. The latter is 5 µm deep on both sides of the wafer.…”

Section: B Soi Wafermentioning

confidence: 99%

“…In order to create the movable structure, the top silicon of the SOI is etched on 87 µm and the 2 µm thick buried oxide is removed as well (Step 15, Figure 8). Once the two wafers are ready for bonding, a piranha cleaning is performed in order to remove any organic residues and have a high quality bonding surface [26]. After optical alignment, the wafers are bonded at 300 • C with an external applied pressure of 0.15 M P a (Step 16, Table IV).…”

Section: B Soi Wafermentioning

confidence: 99%

Design and manufacturing of an electrostatic MEMS relay for high power applications

Copt

Civet

Koechli

et al. 2021

Sensors and Actuators A: Physical

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This is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.

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“…Therefore, the conventional low melting point solders such as Sn-Pb, SnAgCu, and Sn-Bi cannot be used for power electronic devices [2]. Currently, these power devices are interconnected using thermo-compression joining [3], high temperature soldering [4], and nano Ag paste sintering [5]. However, the major drawbacks in these methods are (1) high joining temperature, which enhances the interface diffusion; (2) high applied pressure, which damages the semiconductor substrates; and (3) high manufacturing cost.…”

Section: Introductionmentioning

confidence: 99%

Transient Liquid Phase Bonding of Copper Using Sn Coated Cu MWCNT Composite Powders for Power Electronics

et al. 2019

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In this paper, a novel transient liquid phase bonding material was fabricated by consequent electroless plating of Cu and Sn on a multi-walled carbon nanotube (MWCNT). The resulting Sn-Cu-MWCNT composites were used to join the Cu interconnects at 260°C. After 8 min of reflow time, a complete transformation of Cu3Sn intermetallic compound (IMC) occurred, leaving a Cu/MWCNT-Cu3Sn /Cu joint capable of withstanding the high operating temperature. Due to flake-like morphology, the Sn-Cu-MWCNT composite particles were well packed with lesser voids. The shear strength of the Cu/Cu3Sn-MWCNT/Cu joint was measured as 35.3 MPa, thus exhibiting the scope for replacing conventional transient liquid phase (TLP) powders in the future.

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Low Temperature Wafer-Level Metal Thermo-Compression Bonding Technology for 3D Integration

Cited by 13 publications

References 31 publications

Interfacial characterization of Al-Al thermocompression bonds

Interfacial characterization of Al-Al thermocompression bonds

Design and manufacturing of an electrostatic MEMS relay for high power applications

Transient Liquid Phase Bonding of Copper Using Sn Coated Cu MWCNT Composite Powders for Power Electronics

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