Low temperature (Ts/Tm &lt; 0.1) epitaxial growth of HfN/MgO(001) via reactive HiPIMS with metal-ion synchronized substrate bias

Villamayor, Michelle Marie S.; Kéraudy, Julien; Shimizu, Tetsuhide; Viloan, Rommel Paulo B.; Boyd, Robert W.; Lundin, Daniel; Greene, J. E.; Petrova, I. Yu.; Helmersson, Ulf

doi:10.48550/arxiv.1808.10614

2018

DOI: 10.48550/arxiv.1808.10614

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Low temperature (Ts/Tm < 0.1) epitaxial growth of HfN/MgO(001) via reactive HiPIMS with metal-ion synchronized substrate bias

Michelle Marie S. Villamayor¹,

Julien Kéraudy²,

Tetsuhide Shimizu³

et al.

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Low temperature (Ts/Tm < 0.1) epitaxial growth of HfN/MgO(001) via reactive HiPIMS with metal-ion synchronized substrate bias

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