Low temperature threshold behavior of depletion mode devices&amp;amp;#8212;Characterization and simulation

Gaensslen, F.H.; Jaeger, R.C.; Walker, J. J.

doi:10.1109/iedm.1977.189307

Cited by 16 publications

(5 citation statements)

References 4 publications

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“…From this figure it can be seen that complete ionization of impurities is achieved at concentrations greater than 10 19cm-3. Comparing these results with those of Klassen and de Graff [23] in Fig 5, we see that even though the two plots show the same nature, complete ionization of impurity atoms is achieved by the Klassen et al [ 17] model at Nd > 10 18cm-3. For values of donor concentration less than 10 18cm-3 there is a good agreement between the two models [23], [25].…”

Section: Ill2 Theoretical Modelingsupporting

confidence: 63%

“…and T=77 [5] 5 Ratio of ionized impurity as a function of donor concentration [ 17] 6 Incomplete ionization model flowchart 7 Ratio of the concentration of ionized impurity to the total doping Yet, despite these advancements in semiconductor technology, physical understanding in the realm of small devices, highly doped devices, or devices with graded composition remains incomplete. The BICMOS technology which integrates the CMOS technology…”

Section: List Of Tablesmentioning

confidence: 99%

“…Device modeling based on self-consistent solution of fundamental semiconductor equations dates back to the work of Gummel in 1964 [18]. However, the first application of this style of modeling for problems at low temperature was first carried out by Gaensslen et al in 1976 [17]. The main reason for this delay cannot only be seen in the Jesser demands for low temperature simulation.…”

Section: List Of Tablesmentioning

confidence: 99%

“…Ionized impurity ratio versus donor concentration[ 17] 161The Klassen et al model[23] is based on a simple single-impurity-level theory, with the assumption that the activation energy of the donor or the acceptor level decreases with doping and eventually vanishes as the doping concentration approaches 3xtol8cm-3. The model[23] uses eqns (31)-(35) to calculate the ionized donor and acceptorconcentrations.…”

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confidence: 99%

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Modeling and Simulation of Bipolar Transistor at Low Temperature

Nerurkar¹

2000

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The BICMOS technology which integrates the CMOS technology with bipolar technology has drawn considerable attention as an attractive VLSI technology because of the high speed performance and low power consumption of the BICMOS. However, continued down scaling of CMOS devices has caused increased concerns with problems such as latch up, hot carriers and short channel effect. Most of the above mentioned problems can be avoided by operating the CMOS at liquid-nitrogen temperature(LNT). At low-temperatures, the CMOS exhibits lower sub threshold leakage, higher carrier mobility (which yields improved speed performance), and a steeper logarithmic currentvoltage slope. On the other hand, the low-temperature operation of conventional silicon bipolar circuits has been generally dismissed as impractical because of the well known decrease in the current gain at low temperature. The present interest in integrated bipolar-CMOS circuits, plus the prospect of increased reliability, lower wiring delay, and lower noise, has revised interest in low-temperature bipolar devices. In this context, it is therefore important to acquire accurate knowledge of the transistor properties at liquid nitrogen temperature. This can be done in two ways. One is through experimental lowtemperature measurements and the other by low-temperature device simulations.

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Section: Ill2 Theoretical Modelingsupporting

confidence: 63%

Section: List Of Tablesmentioning

confidence: 99%

Section: List Of Tablesmentioning

confidence: 99%

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confidence: 99%

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Modeling and Simulation of Bipolar Transistor at Low Temperature

Nerurkar¹

2000

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“…It is usually thought that dopant freezeout must be important in predicting V T because the frozen-out dopants in the channel would need more 'ionizing' voltage to form the depletion region and turn on the MOSFET [13]- [15]. However, dopant freezeout is of minor importance to predict the qualitative behavior of V T over temperature in enhancement-mode devices [4].…”

Section: Introductionmentioning

confidence: 99%

Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs

Beckers

Jazaeri

Grill

et al. 2020

IEEE J. Electron Devices Soc.

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This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, bandgap widening, and uniformly distributed traps in the bandgap do not change the qualitative behavior of the threshold voltage over temperature. Care should be taken because dopant freezeout results in a different physical definition of the threshold voltage. Using different definitions changes significantly the threshold current level. The proposed model is experimentally validated with measurements in large-area nMOS and pMOS devices of a commercial 28-nm bulk CMOS process down to 4.2 K. Our modeling results suggest that a pMOSspecific phenomenon in the gate stack is responsible for the non-saturating temperature behavior of the threshold voltage in pMOS devices.

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Two-dimensional analysis of a BiNMOS transistor operating at 77 K using a modified PISCES program

Chen

Kuo

1992

IEEE Trans. Electron Devices

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Low temperature threshold behavior of depletion mode devices&#8212;Characterization and simulation

Cited by 16 publications

References 4 publications

Modeling and Simulation of Bipolar Transistor at Low Temperature

Modeling and Simulation of Bipolar Transistor at Low Temperature

Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs

Two-dimensional analysis of a BiNMOS transistor operating at 77 K using a modified PISCES program

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