Low Temperature Thermal Expansion of InP

Deus, P.; Schneider, H. A.; Voland, U.; Stiehler, K.

doi:10.1002/pssa.2211030214

Cited by 20 publications

(10 citation statements)

References 16 publications

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“…As to the function α th (T ), it was measured by various authors, see Refs. [41][42][43]. We follow the measurements of Haruna et al 41 , which basically agree with those of other authors but are more complete.…”

Section: Inpsupporting

confidence: 88%

Temperature dependence of the electron spin g factor in CdTe and InP

Pfeffer

Zawadzki

2012

Journal of Applied Physics

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Temperature dependence of the electron spin g factors in bulk CdTe and InP are calculated and compared with experiment. It is assumed that the only modification of the band structure related to temperature is a dilatation change in the fundamental energy gap. The dilatation changes of fundamental gaps are calculated for both materials using available experimental data. Computations of the band structures in the presence of a magnetic field are carried out employing five-level P·p model appropriate for medium-gap semiconductors. In particular, the model takes into account spin splitting due to bulk inversion asymmetry (BIA) of the materials. The resulting theoretical effective masses and g factors increase with electron energy due to band nonparabolicity. Average g values are calculated summing over populated Landau and spin levels properly accounting for the thermal distribution of electrons in the band. It is shown that the spin splitting due to BIA in the presence of magnetic field gives observable contributions to g values. Our calculations are in good agreement with experiment in the temperature range of 0 K to 300 K for CdTe and 0 K to 180 K for InP. The temperature dependence of g is stronger in CdTe than in InP due to different signs of the bandedge g values in the two materials. Good agreement between the theory and experiment strongly indicates that the temperature dependence of spin g factors is correctly explained. In addition, we discuss formulas for the energy dependence of spin g factor due to band nonparabolicity, which are liable to misinterpretation.

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Section: Inpsupporting

confidence: 88%

Temperature dependence of the electron spin g factor in CdTe and InP

Pfeffer

Zawadzki

2012

Journal of Applied Physics

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“…It is seen that the general agreement between the present theoretical calculations and the experimental measurements is quite good for these compounds. From the principles of thermodynamics, it is known that the linear thermal expansion coefficient should approach zero as T closes to 0 K. However, the measured results for GaSb [48] and InP [49] are divergent near 0 K. It is suggested that new measurements are worthwhile to confirm our result for GaSb at ultralow temperature.…”

Section: Linear Thermal Expansion Coefficientcontrasting

confidence: 43%

“…A numerical list of these thermal expansion coefficients is given in Table 2. For a quantitatively evaluation, we compared present results with a few reports from experimental measurement for AlN [46], BP [46], GaAs [47], GaSb [48], InP [49,50] and GaP [46,51] rameters for most of the other III-V phases are still unavailable. These comparisons for AlN, GaSb, InP, and GaP are presented in Fig.…”

Section: Linear Thermal Expansion Coefficientmentioning

confidence: 91%

Studies on thermodynamic properties of III–V compounds by first‐principles response‐function calculation

Wang

2009

Physica Status Solidi (b)

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The temperature dependences of the Grüneisen parameter, heat capacity, bulk modulus and linear thermal expansion coefficient of sixteen III–V zincblende compounds are studied by first‐principles response‐function calculations. The fundamental relationships among these physical parameters are explored. Negative thermal expansions at lower temperature are found in most of these III–V phases except for the nitrides and boron compounds. By analyzing the cell‐volume dependences of the phonon spectrum, it is found that the phases with a negative thermal expansion show a significant acoustic phonon weakening at the X‐point in their phonon dispersion, while slight weakening is only seen around the L‐point for those boron phases. There is no sign of phonon weakening in the nitrides. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Figure 2 shows the energies of the bulk InP G 1c and X 1c conduction states vs lattice constant a, exhibiting a crossing at a 5.5852 Å; the deformation relative to the LDA calculated zero-pressure lattice constant (at which our pseudopotential is generated) is Da͞a 0.0414. The measured [5] bulk Da͞a 0.0370 corresponding to a transition pressure [5] of 112 kbar is within 10% (Table I [ 5,16]). Figure 3 shows the energies of three lowest conduction states of P-centered InP dots vs lattice constant near the critical transition point.…”

Section: Huaxiang Fu and Alex Zungermentioning

confidence: 94%

Quantum-Size Effects on the Pressure-Induced Direct-to-Indirect Band-Gap Transition in InP Quantum Dots

Zunger

1998

Phys. Rev. Lett.

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We predict that the difference in quantum confinement energies of G-like and X-like conduction states in a covalent quantum dot will cause the direct-to-indirect transition to occur at substantially lower pressure than in the bulk material. Furthermore, the first-order transition in the bulk is predicted to become, for certain dot sizes, a second-order transition. Measurements of the "anticrossing gap" could thus be used to obtain unique information on the G-X-L intervalley coupling, predicted here to be surprisingly large (50 -100 meV). [S0031-9007 (98)06301-7] PACS numbers: 71.24. + q, 73.20.DxReduced dimensions usually cause pressure-induced structural phase transitions to occur at elevated pressures relative to the bulk solid. This is the case for the AlAs layers in AlAs͞GaAs superlattices [1], for the transition to b-Sn structure in Si nanocrystals [2], and for the wurzite-to-rocksalt structure in CdSe dots [3]. Here, we show that reduced dimensionality causes another type of pressure-induced transition-the electronic direct-toindirect transition-to occur at reduced pressures relative to the bulk.Pressure-induced direct ͑G 1c ͒ to indirect ͑X 1c ͒ transitions occur in bulk zinc blende semiconductors [4,5] because under pressure, the G 1c energy goes up while the X 1c energy goes down [Figs. 1(a) and 1(b)]. This reflects the fundamentally different charge distribution in these two states [6]: the antibonding G 1c state has a node along the cation-anion bond, so it is destabilized (moves up in energy) as this bond is shortened, while the X 1c state has most of its amplitude in the interstitial volume, where no atoms exist. As a result of the different signs of the G 1c and X 1c deformation potentials, in materials where at zero pressure the energy of the X 1c state is not too far above the G 1c state (GaAs 4 , InP 5 , but not InAs or CdSe), a pressureinduced first-order G 1c ! X 1c level crossing [7] occurs before the material is structurally phase transformed.Reduced dimensionality can alter the energetic separation between the G 1c -like and X 1c -like states even without pressure [ Figs. 1(b) and 1(c)]. This results from the fact that quantum confinement raises the energy of G 1c (with lighter mass) faster than the energy of X 1c (with heavier mass) [ Figs. 1(b) and 1(c)]. Thus, if the energy of the X 1c state is not too far above the G 1c state in bulk, reduced size alone can cause a direct-to-indirect transition to occur at zero pressure. Detailed calculations [8] without pressure effect predicted this to occur in GaAs films, wires, and dots as size diminishes. Because of the larger (ϳ0.95 eV, measured [9]) G 1c 2 X 1c separation in bulk InP relative to in bulk GaAs (0.55 eV [10]), no direct-toindirect transition was predicted to occur in free-standing InP dots at zero pressure [11]. Since, however, quantum confinement in InP dots could reduce the G 1c 2 X 1c energy separation relative to the bulk, it might take less pressure to transform the dot than to transform the bulk into an indirect band gap [ Figs...

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Low Temperature Thermal Expansion of InP

Cited by 20 publications

References 16 publications

Temperature dependence of the electron spin g factor in CdTe and InP

Temperature dependence of the electron spin g factor in CdTe and InP

Studies on thermodynamic properties of III–V compounds by first‐principles response‐function calculation

Quantum-Size Effects on the Pressure-Induced Direct-to-Indirect Band-Gap Transition in InP Quantum Dots

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