Low-temperature synthesis TiO x passivation layer for organic-silicon heterojunction solar cell with a high open-circuit voltage

Liu, Yuan; Zhang, Jie; Wu, Haihua; Cui, Wei; Wang, Rongbin; Ding, Ke; Lee, Shuit‐Tong; Sun, Baoquan

doi:10.1016/j.nanoen.2017.02.024

Cited by 62 publications

(41 citation statements)

References 48 publications

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“…Alternative materials are expected to completely replace doped silicon layers to form the asymmetric carrier selective heterocontacts with c-Si wafers. These alternative materials, which usually are called carrier-selective materials or passivation contact materials, include transition metal oxides [30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47], organic materials [48][49][50][51][52][53], and alkali/alkaline earth metals and/or salts [30,40,[54][55][56][57][58][59][60][61]. Compared to doped-silicon layers, dopant-free carrier-selective materials open a wider optical and electrical parameter space, decoupling the optimization of different solar cell loss components.…”

Section: Two Types Of Passivation Contactsmentioning

confidence: 99%

“…Compared to the doped silicon films, dopant-free carrier-selective contacts consist of elementary or compound thin films, with high work functions as hole-selective contacts and low work functions as electron-selective contacts. For example, electron-selective contacts include compounds with a low work function, such as LiF x [30,32,40], MgF x [56], TiO 2 [31,40,[43][44][45] and ZnO [46,47], and alkaline metals with an extremely low work function, such as Mg [54] and Ca [57]. Hole-selective contacts mainly consist of organic films [48][49][50][51][52][53] and transition metal oxides (TMO s ), such as MoO x [30,32,[36][37][38][40][41][42]47], WO x [35,38,39] [33][34][35]38], and NiO x [31].…”

Section: Dopant-free Carrier-selective Contactsmentioning

confidence: 99%

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Recent Advances in and New Perspectives on Crystalline Silicon Solar Cells with Carrier-Selective Passivation Contacts

Yao

et al. 2018

Crystals

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Crystalline silicon (c-Si) is the dominating photovoltaic technology today, with a global market share of about 90%. Therefore, it is crucial for further improving the performance of c-Si solar cells and reducing their cost. Since 2014, continuous breakthroughs have been achieved in the conversion efficiencies of c-Si solar cells, with a current record of 26.6%. The great efficiency boosts originate not only from the materials, including Si wafers, emitters, passivation layers, and other functional thin films, but also from novel device structures and an understanding of the physics of solar cells. Among these achievements, the carrier-selective passivation contacts are undoubtedly crucial. Current carrier-selective passivation contacts can be realized either by silicon-based thin films or by elemental and/or compound thin films with extreme work functions. The current research and development status, as well as the future trends of these passivation contact materials, structures, and corresponding high-efficiency c-Si solar cells will be summarized.

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Section: Two Types Of Passivation Contactsmentioning

confidence: 99%

Section: Dopant-free Carrier-selective Contactsmentioning

confidence: 99%

Recent Advances in and New Perspectives on Crystalline Silicon Solar Cells with Carrier-Selective Passivation Contacts

Yao

et al. 2018

Crystals

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“…One approach to implementing this strong light‐trapping capability is the construction of Si nanostructures in the cells; these can improve both the optical and electrical properties of the cells. Considering optics, vertically aligned nanoarrays are known to suppress light reflection by increasing the optical path length for guided‐mode coupling . Regarding the electrical properties, the vertical junction of radial diodes provides a collection path separated from the photoexcited thickness.…”

Section: Introductionmentioning

confidence: 99%

Realization of 16.9% Efficiency on Nanowires Heterojunction Solar Cells with Dopant‐Free Contact for Bifacial Polarities

Wang

Zhang

Yang

et al. 2018

Adv Funct Materials

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Low-cost and efficient interfacial layer construction with the required charge selectivity and compatibility is necessary for nanostructured solar cells, and the proper integration of the interfacial layer with the light-trapping system is required to improve the power conversion efficiency of the cell. Herein, low-cost Si nanowires-based solar cells with tunneling heterojunctions are developed by the deposition of MoO x and spin-coating of Cs 2 CO 3 as the carrier-selective layers. The power conversion efficiency of 16.9% for a device of 4 cm 2 in area is achieved by Si nanowires solar cells by the self-assembly of ultra-thin SiO x as the surface tunneling passivation layer. Self-assembly is realized with an ultraviolet O 3 treatment process at room temperature. Quasi-steady-state photoconductance, microwave-detected photoconductance decay, and constant current-voltage measurements are used to characterize the passivation quality and tunneling transportation properties of the ultra-thin SiO x layers. Interfacial charge recombination is suppressed and effective carrier tunneling properties are developed by the growth of ≈1.5 nm thick SiO x layers on the surfaces of the Si nanowires. This proposed Si nanowires solar cell architecture featuring tunneling heterojunctions achieves high performance and may be suitable for fabricating industrialized Si nanowires-based photovoltaic devices through a cost-effective, simple, and low-temperature process.

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“…Among the electron‐selective transport materials mentioned above, TiO 2 is one of the few materials that can spontaneously satisfy the dual functions of interfacial passivation and carrier‐selective transport. Many fabrication technologies have been developed to deposit high‐quality TiO 2 layers, such as chemical vapor deposition (CVD), atomic layer deposition (ALD), evaporation, and sol–gel processes . Benefiting from chemical and field‐effect passivation, the ALD/CVD‐deposited TiO 2 layers can effectively passivate a Si surface with a surface recombination velocity down to 10 cm s −1 .…”

mentioning

confidence: 99%

TiO₂ Films from the Low‐Temperature Oxidation of Ti as Passivating‐Contact Layers for Si Heterojunction Solar Cells

Ling

Gao

et al. 2017

Solar RRL

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Crystalline silicon (c‐Si) heterojunction solar cells featuring dopant‐free and carrier‐selective contacts have drawn considerable attention due to their potential in achieving high efficiency with extremely simple fabrication procedures. Here, a low‐temperature thermal oxidation process is developed to fabricate a titanium dioxide (TiO2) ultrathin layer directly from a titanium (Ti) film that was predeposited onto Si substrates, leading to a surface recombination velocity as low as 15 cm s−1. Detailed interfacial and structural characterizations show that the excellent contact passivation property was mainly attributed to the amorphous nature of TiO2 and the presence of a Ti‐contained SiOx interlayer. By applying this ultrathin TiO2 layer as a passivating‐contact layer, test heterojunction solar cells employing a core structure of poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/n‐Si/TiO2 obtained an efficiency as high as 14.6% (only 13.0% for the reference device), demonstrating the potential for applications of this thermal oxidation‐derived TiO2 layer in dopant‐free heterojunction solar cells.

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Low-temperature synthesis TiO x passivation layer for organic-silicon heterojunction solar cell with a high open-circuit voltage

Cited by 62 publications

References 48 publications

Recent Advances in and New Perspectives on Crystalline Silicon Solar Cells with Carrier-Selective Passivation Contacts

Recent Advances in and New Perspectives on Crystalline Silicon Solar Cells with Carrier-Selective Passivation Contacts

Realization of 16.9% Efficiency on Nanowires Heterojunction Solar Cells with Dopant‐Free Contact for Bifacial Polarities

TiO₂ Films from the Low‐Temperature Oxidation of Ti as Passivating‐Contact Layers for Si Heterojunction Solar Cells

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Low-temperature synthesis TiO x passivation layer for organic-silicon heterojunction solar cell with a high open-circuit voltage

Cited by 62 publications

References 48 publications

Recent Advances in and New Perspectives on Crystalline Silicon Solar Cells with Carrier-Selective Passivation Contacts

Recent Advances in and New Perspectives on Crystalline Silicon Solar Cells with Carrier-Selective Passivation Contacts

Realization of 16.9% Efficiency on Nanowires Heterojunction Solar Cells with Dopant‐Free Contact for Bifacial Polarities

TiO2 Films from the Low‐Temperature Oxidation of Ti as Passivating‐Contact Layers for Si Heterojunction Solar Cells

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Product

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About

TiO₂ Films from the Low‐Temperature Oxidation of Ti as Passivating‐Contact Layers for Si Heterojunction Solar Cells