2019
DOI: 10.1016/j.jallcom.2019.03.062
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Low temperature synthesis of high-purity Ti3SiC2 via additional Si through spark plasma sintering

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Cited by 25 publications
(7 citation statements)
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“…This value is somewhat higher as compared to the intrinsic hardness of Ti 3 SiC 2 reported to be about 4 GPa [12]. The higher hardness as compared to monolithic phase Ti 3 SiC 2 may be associated to the finer microstructure introduced by SPS [61] as well as the presence of TiC ancillary in the synthesized sample. Optical micrographs (Fig.…”
Section: Vickers-induced Deformation Microstructurementioning
confidence: 69%
See 1 more Smart Citation
“…This value is somewhat higher as compared to the intrinsic hardness of Ti 3 SiC 2 reported to be about 4 GPa [12]. The higher hardness as compared to monolithic phase Ti 3 SiC 2 may be associated to the finer microstructure introduced by SPS [61] as well as the presence of TiC ancillary in the synthesized sample. Optical micrographs (Fig.…”
Section: Vickers-induced Deformation Microstructurementioning
confidence: 69%
“…This proposed loss of Si by deintercalation even at sintering temperature below the melting point of silicon (T m = 1414℃) contributes significantly to the loss of purity in the synthesized sample during the SPS. Investigators have often compensated for the loss of Si during vacuum sintering by silicon over-stoichiometry [47,[61][62][63] (that is, deviation from 3:1:2 stoichiometric ratio for Ti:Si:C) in the starting mixtures to increase the conversion into Ti 3 SiC 2 . Another method involves the systematic addition of a small amount Al in the starting powder mixture [64][65][66].…”
Section: Pore Formation In Ti 3 Sicmentioning
confidence: 99%
“…Molten Al could remove oxygen, fill gaps and provide a bridging effect among the reacting powder particles, all of which could promote the diffusion reaction 13 . As a result, TiC as an impurity will decrease obviously when suitable contents of Al are introduced into in-suit synthesis [13,14] .…”
Section: Introductionmentioning
confidence: 99%
“…Ti3SiC2 is a part of the large family of ternary laminate compounds, with various synthesis methods such as pressureless, [8] microwave sintering, [9] hot pressing (HP) [10][11][12][13] and spark plasma sintering (SPS). [14][15][16][17][18] Sintering temperatures is a significant parameter in in-situ synthesis process, excessive temperature would cause decomposition of Ti3SiC2 as well as generate TiC as an impurity. The sintering temperatures and contents (also mechanical properties if they are available) of Ti3SiC2 synthesized via different sintering methods are summarized in Table 1.…”
Section: Introductionmentioning
confidence: 99%