2020
DOI: 10.1039/d0na00066c
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Low-temperature synthesis of 2D anisotropic MoTe2 using a high-pressure soft sputtering technique

Abstract: High-pressure soft sputtering: large area 1T′ phase MoTe2 thin films were grown at temperatures as low as 300 °C.

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Cited by 5 publications
(2 citation statements)
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“…Jamal et al fabricated nickel oxide TFs at 50 W and 90 min 50 . In addition, the crystallization temperature of MoTe 2 was found to be above 573 K 51 . These are harsher conditions than our study.…”
Section: Resultscontrasting
confidence: 43%
See 1 more Smart Citation
“…Jamal et al fabricated nickel oxide TFs at 50 W and 90 min 50 . In addition, the crystallization temperature of MoTe 2 was found to be above 573 K 51 . These are harsher conditions than our study.…”
Section: Resultscontrasting
confidence: 43%
“…Lu et al fabricated zinc oxide TFs from 100 to 250 W and annealed at 875 K. 49 Jamal et al fabricated nickel oxide TFs at 50 W and 90 min. 50 In addition, the crystallization temperature of MoTe 2 was found to be above 573 K. 51 These are harsher conditions than our study. In this study, we fabricated MOT-X TFs at room temperature with an average power of 25 W and an average sputtering time of 15 min.…”
Section: Resultscontrasting
confidence: 41%