2018 IEEE International Electron Devices Meeting (IEDM) 2018
DOI: 10.1109/iedm.2018.8614643
|View full text |Cite
|
Sign up to set email alerts
|

Low Temperature Sputtered Graphenic Carbon Enables Highly Reliable Contacts to Silicon

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Year Published

2019
2019
2020
2020

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(2 citation statements)
references
References 6 publications
0
2
0
Order By: Relevance
“…More recently, we demonstrated that a low temperature sputtered graphenic carbon (SC) is possible and the SC could be doped with nitrogen (CN), which lowers the resistivity. SC and CN showed an enhanced reliability compared to CVD-C-Si and TiSi-Si [27]. In this extended paper, we will discuss these results more thoroughly as we review the carbon deposition process and related electrical properties in much more detail.…”
Section: Introductionmentioning
confidence: 99%
“…More recently, we demonstrated that a low temperature sputtered graphenic carbon (SC) is possible and the SC could be doped with nitrogen (CN), which lowers the resistivity. SC and CN showed an enhanced reliability compared to CVD-C-Si and TiSi-Si [27]. In this extended paper, we will discuss these results more thoroughly as we review the carbon deposition process and related electrical properties in much more detail.…”
Section: Introductionmentioning
confidence: 99%
“…16) The a-C:N layer was also reported as an diffusion barrier for power device application. 17) It is potentially adapted as an efficient barrier against moisture for Cu surface. Additionally, an appropriate N concentration for doping is also expected to enhance the conductivity of the a-C layer.…”
Section: Introductionmentioning
confidence: 99%