Low Temperature Sputtered Graphenic Carbon Enables Highly Reliable Contacts to Silicon

Stelzer, Max; Jung, Moritz; Wurstbauer, Ursula; Holleitner, Alexander W.; Kreupl, Franz

doi:10.1109/iedm.2018.8614643

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…More recently, we demonstrated that a low temperature sputtered graphenic carbon (SC) is possible and the SC could be doped with nitrogen (CN), which lowers the resistivity. SC and CN showed an enhanced reliability compared to CVD-C-Si and TiSi-Si [27]. In this extended paper, we will discuss these results more thoroughly as we review the carbon deposition process and related electrical properties in much more detail.…”

Section: Introductionmentioning

confidence: 99%

Highly Reliable Contacts to Silicon Enabled by Low Temperature Sputtered Graphenic Carbon

Stelzer

Jung

Wurstbauer

et al. 2019

IEEE J. Electron Devices Soc.

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Titanium silicide (TiSi) contacts are frequently used metal-silicon contacts but are known to diffuse into the active region under high current density stress pulses. Recently, we demonstrated that graphenic carbon (GC) deposited by CVD at 1000 • C on silicon has the same low Schottky barrier as TiSi, but a much improved reliability against high current density stress pulses. In this paper, we demonstrate now that the deposition of GC is possible at 100 • C − 400 • C by a sputter process. We show that the sputtered carbon-silicon contact is over 1 billion times more stable against high current density pulses than the conventionally used TiSi-Si junction, while it has the same or even a lower Schottky barrier. SC can be doped by nitrogen (CN) and this results in an even lower resistivity and improved stability. Scalability of the CN thickness down to 5 nm is demonstrated. The finding that there is a low temperature approach for using the excellent carbon properties has important consequences for the reliability of contacts to silicon and opens up the use of GC in a vast number of other applications.

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Section: Introductionmentioning

confidence: 99%

Highly Reliable Contacts to Silicon Enabled by Low Temperature Sputtered Graphenic Carbon

Stelzer

Jung

Wurstbauer

et al. 2019

IEEE J. Electron Devices Soc.

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“…16) The a-C:N layer was also reported as an diffusion barrier for power device application. 17) It is potentially adapted as an efficient barrier against moisture for Cu surface. Additionally, an appropriate N concentration for doping is also expected to enhance the conductivity of the a-C layer.…”

Section: Introductionmentioning

confidence: 99%

Efficient moisture barrier of nitrogen-doped amorphous-carbon layer by room temperature fabrication for copper metallization

Gomasang

Ueno

2020

Jpn. J. Appl. Phys.

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To enhance the humidity reliability of copper (Cu) metallization used in memory LSIs, nitrogen (N)-doped amorphous-carbon (a-C:N) deposited by sputtering on the Cu surface is proposed. Since the preparation of a-C:N film can be achieved at room temperature, the process temperature is compatible with LSIs fabrication. After the high-temperature/humidity storage test, the a-C:N layer was found to be an excellent barrier to protect the Cu surface from oxidation and avoid the increase of Cu sheet resistance. Depth profiles imply no oxidation occurs on the underlying Cu surface. An appropriate concentration of N-doping is considered to prevent the penetration of moisture with the effects of the repulsive force between both N and O atoms. The proposed method is promising as a practical method to improve the reliability of Cu metallization for long-term storage.

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Low Temperature Sputtered Graphenic Carbon Enables Highly Reliable Contacts to Silicon

Cited by 2 publications

References 6 publications

Highly Reliable Contacts to Silicon Enabled by Low Temperature Sputtered Graphenic Carbon

Highly Reliable Contacts to Silicon Enabled by Low Temperature Sputtered Graphenic Carbon

Efficient moisture barrier of nitrogen-doped amorphous-carbon layer by room temperature fabrication for copper metallization

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