Low-temperature spray-pyrolysis of FeS2 films and their electrical and optical properties

Orletskii, I. G.; Maryanchuk, P. D.; Майструк, Э. В.; Solovan, M. N.; Брус, В. В.

doi:10.1134/s1063783416010224

Cited by 20 publications

(8 citation statements)

References 13 publications

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“…For example, the absorption coefficient is about 1.6x10 5 at a wavelength 400 nm. The calculated bandgap of iron sulfide prepared at substrate temperature of 200 o C was 2.45 eV and this value has a good agreement with [20].…”

Section: Optical Propertiessupporting

confidence: 63%

Characterization of FeS2 Thin Film Prepared by Spray Pyrolysis Method for Optoelectronic Applications

Ibrahim¹,

Hassan²,

Hassoon³

2022

JASN

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In this work, the physical properties of iron sulfide (FeS2) thin films deposited by the chemical spray-pyrolysis (CSP) technique were studied. The thin films are deposited on glass substrates at 200 o C, using FeCl3 salt with thiourea (NH2)2CS as precursors. Structural analysis of X-Ray diffraction manifested that the thin films contain two phases: Marcasite and Pyrite in planes ( 110), ( 111) at angles 2θ =26.3°, 2θ =28.3° respectively. Optical properties analysis showed that the prepared iron sulfide thin-films were highly absorbing in the UV-Visible range and the absorption coefficient was in the range of 1.6x10 5 cm-1 with a relatively low resistivity of about 0.49 (Ω.cm). The calculated activation energy (Ea) was 0.024 eV and the bandgap value was 2.45 eV. Moreover, the FeS2 thin films were also deposited on (CdO) to fabricate a heterojunction photocell. In conclusion, there is the feasibility of preparing low-cost and highly absorbing iron sulfide (FeS2) thin films for optoelectronic applications with acceptable homogeneity using the spray-pyrolysis technique.

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Section: Optical Propertiessupporting

confidence: 63%

Characterization of FeS2 Thin Film Prepared by Spray Pyrolysis Method for Optoelectronic Applications

Ibrahim¹,

Hassan²,

Hassoon³

2022

JASN

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“…Pyrite iron disulfide (NiS 2 ) acquires unique morphological structures including nanocrystals, nanowires, nanosheets, nanocubes, and exhibits interesting electrical, photovoltaic, and catalytic properties. [211][212][213][214][215][216][217][218][219][220] An interesting comparative study was done by Shukla et al 221 In an interesting study, FeS 2 nanorod arrays were fabricated on a FTO substrate after sulfurizing FeO(OH) nanorods, and used as a CE for DSSCs. 222 The FeS 2 nanorods exhibited better electrocatalytic activity than FeS 2 films and Pt-based CEs due to more active sites, which resulted in high J SC value of the DSSCs.…”

Section: Fes 2 Based Counter Electrodesmentioning

confidence: 99%

Two-dimensional transition metal dichalcogenide-based counter electrodes for dye-sensitized solar cells

et al. 2017

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Dye-sensitized solar cells (DSSCs) are gaining considerable interest as alternatives to semiconductor-based thin film solar cells. The noble metal platinum (Pt) is conventionally used as a counter electrode (CE) material for fabricating DSSCs, since Pt is expensive and scarce, therefore, new materials have been explored to develop cost-effective Pt-free counter electrodes. Two-dimensional (2D) graphene-based counter electrodes have achieved the highest power conversion efficiency (PCE, h) of 13%, which has stimulated research activities in 2D layered transition metal dichalcogenides (TMDs) for developing Pt-free DSSCs.In this review, progress made on alternative counter electrodes for fabricating low-cost Pt-free DSSCs, based on earth-abundant 2D TMDs including MoS

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“…The application of Cd 1− Zn Te makes the production of high-quality heterojunctions more feasible. The choice of the spray-pyrolysis method for depositing SnS 2 films onto the Cd 1− Zn Te surface is related to its low cost and successful application when fabricating the films of metal sulfides [15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of Sis Heterostructures n-SnS2/CdTeO3/p-CdZnTe

Оrletskyi¹,

Ілащук²,

Майструк³

et al. 2019

Ukr. J. Phys.

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Conditions for the production of rectifying semiconductor-insulator-semiconductor (SIS) heterostructures n-SnS2/CdTeO3/p-Cd1−xZnxTe with the use of the spray-pyrolysis of SnS2 thin films on p-Cd1−xZnxTe crystalline substrates with the formation of an intermediate tunnel-thin CdTeO3 oxide layer have been studied. By analyzing the temperature dependences of the current-voltage characteristics, the dynamics of the heterostructure energy parameters is determined, and the role of energy states at the CdTeO3/p-Cd1−xZnxTe interface in the formation of forward and reverse currents is elucidated. By analyzing the capacity-voltage characteristics, the processes of charge accumulation and inversion in SIS structures is considered. An energy diagram of the examined heterostructure, which well describes experimental electro-physical phenomena, is proposed.

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Low-temperature spray-pyrolysis of FeS2 films and their electrical and optical properties

Cited by 20 publications

References 13 publications

Characterization of FeS2 Thin Film Prepared by Spray Pyrolysis Method for Optoelectronic Applications

Characterization of FeS2 Thin Film Prepared by Spray Pyrolysis Method for Optoelectronic Applications

Two-dimensional transition metal dichalcogenide-based counter electrodes for dye-sensitized solar cells

Electrical Properties of Sis Heterostructures n-SnS2/CdTeO3/p-CdZnTe

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