LOW-TEMPERATURE SINTERING OF ZnO-Bi₂O₃-BASED VARISTOR CERAMICS FOR ENHANCED MICROSTRUCTURE DEVELOPMENT AND CURRENT-VOLTAGE CHARACTERISTICS

Bernik, Slavko

doi:10.13168/cs.2017.0040

Cited by 8 publications

(8 citation statements)

References 22 publications

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“…A high breakdown field is crucial for ZnO based varistor ceramics to meet the miniaturization requirement of electronic equipment and high transmission voltage of power systems [4]. Many other sintering processes, such as liquid-phase sintering [5], microwave sintering [6,7], and spark plasma sintering (SPS) [8] were developed to decrease the sintering temperature and improve the electrical properties of ZnO varistors. Via these sintering techniques, the breakdown field could be enhanced to around 1100 V/mm with  of around 30.…”

Section: Introductionmentioning

confidence: 99%

Cold sintering ZnO based varistor ceramics with controlled grain growth to realize superior breakdown electric field

Zhao

Liang

Sun

et al. 2021

Journal of the European Ceramic Society

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Section: Introductionmentioning

confidence: 99%

Cold sintering ZnO based varistor ceramics with controlled grain growth to realize superior breakdown electric field

Zhao

Liang

Sun

et al. 2021

Journal of the European Ceramic Society

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“…新的V o , 这是因为在ZnO中锌填隙缺陷形成焓要低于氧空位缺陷形成焓, 且氧化锌中锌原子的原子半径低于氧原子 [15] , 所以在ZnO表面更容易形成变, 这也是导致ZnO压敏阀片老化的原因之一 [21,22] .…”

Section: 结果与讨论unclassified

“…界面之间结合的强弱对材料的宏观性能有重要的影响 [22] 的阻值急剧下降的现象 [22,23] . 在这一区域中的伏安体系的击穿场强在0.15 V/Å附近, 一般ZnO压敏陶瓷单晶界击穿电压为2.5-3.6 V之间 [24] , 通过 TEM观察到非晶区晶界宽度为1-2 nm [14] , 因此可求得实际单晶界击穿场强在0.12-0.36 V/Å之间, 进一步说明本文所构建的界面模型能够较好地反映实际ZnO压敏阀片的内部微观结构.…”

Section: 结果与讨论unclassified

Electrical properties of ZnO/<inline-formula><tex-math id="Z-20220101164636">\begin{document}${\boldsymbol{\beta}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="2-20210635_Z-20220101164636.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="2-20210635_Z-20220101164636.png"/></alternatives></inline-formula>-Bi2O3 interfaces featuring aggreg

Ya-Sha¹,

Liu²,

Qing-Dong³

et al. 2022

Acta Phys. Sin.

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The safe operation of power equipment largely depends on the overvoltage protection level of the arrester. The ZnO varistors are widely used as the core components of the arresters in power systems because of the excellent nonlinear volt-ampere characteristics. In order to study the electrical properties of ZnO varistors under different external electric fields from the microstructure, the method of first-principles based on density functional theory (DFT) is used, and structure of ZnO/β-Bi2O3 interface containing zinc interstitial (Zni) and oxygen vacancy (Vo) defects is built. The results show that the Vo defect migrates after full relaxation. The Zni shifts to the interface under an external electric field. The interface energy increases rapidly after the electric field intensity has exceeded 0.1 V/Å, which means that the interaction force between the interfaces becomes larger, the distance between ZnO and β-Bi2O3 layers decreases, and the conductivity increases rapidly. The differential charge density, work function and Bader charge analysis method are used to calculate the barrier height at the interface, which proves that the built-in electric field is an important cause ingredient responsible for the non-linear volt-ampere characteristics of ZnO varistors. The effects of atomic orbital energy level, trap energy level and energy gap on the macroscopic conductivity of ZnO varistors are analyzed by using the method of density of states analysis. In this work are analyzed the different electrical parameters of the ZnO/β-Bi2O3 interface with aggregation defects by adjusting the intensity of the external electric field, and a new idea is provided for learning the electrical characteristics of ZnO varistors.

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“…Up to date, several researches have shown the relationship between sintering temperature and how it affects the densification of ceramic varistor. Such example includes decreasing in sintering temperature cause an increase in pores, which directly decrease the density and vice versa [8,30,31]. The truth is each material has its own properties that cause this kind of situation to happen.…”

Section: Densificationmentioning

confidence: 99%

Conventional Sintering Effects on the Microstructure and Electrical Characteristics of Low-Voltage Ceramic Varistor

Ghazali¹,

Shaifudin²,

Abdullah³

et al. 2018

Sintering Technology - Method and Application

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Conventional, free or pressure less sintering is the simplest technique which involves heating of a powder compact, previously prepared at ambient temperatures, without applying any external pressure. It can be conducted with various box furnaces or tube furnaces under different atmospheres (oxidizing, reducing, inert, and vacuum). Through the use of this method, a highly applicable varistor can be mass produced. Varistors are of a particular interest for modern surge protection of over-voltage. Nowadays, ZnO ceramic varistors are most favorable in electronic industry due to their excellent electrical characteristics and high energy handling capabilities. By optimizing the method during sintering process, the number of potential barriers formed can be controlled thus improving the capability of the low-voltage varistor.

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LOW-TEMPERATURE SINTERING OF ZnO-Bi₂O₃-BASED VARISTOR CERAMICS FOR ENHANCED MICROSTRUCTURE DEVELOPMENT AND CURRENT-VOLTAGE CHARACTERISTICS

Abstract: ZnO-Bi

Cited by 8 publications

References 22 publications

Cold sintering ZnO based varistor ceramics with controlled grain growth to realize superior breakdown electric field

Cold sintering ZnO based varistor ceramics with controlled grain growth to realize superior breakdown electric field

Conventional Sintering Effects on the Microstructure and Electrical Characteristics of Low-Voltage Ceramic Varistor

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