Low temperature Si doped ZnO thin films for transparent conducting oxides

Clatot, Johnny; Campet, G.; Zeinert, A.; Labrugère, C.; Nistor, Magda; Rougier, Aline

doi:10.1016/j.solmat.2011.04.006

Cited by 88 publications

(34 citation statements)

References 21 publications

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“…It is interesting to note that the high conductivity achieved by typical Ga-doped ZnO thin films is due to their highly non-equilibrium as-deposited metastable state (rather than due to classical thermodynamic doping substitution reasons), resulting from growth at relatively low temperature and modest oxygen partial pressure [ 33 ]. These deposition conditions are also desirable attributes for depositing ZnO for the purpose of making thin film PV devices [ 34,35 ]. In this process, independent control of the bandgap (Mg alloying) and the conductivity (Ga doping) of ZnO are desired to tune the band offset with the absorber without compromising the losses due to series resistance in the solar cell.…”

Section: Introductionmentioning

confidence: 99%

Combinatorial sputtering of Ga-doped (Zn,Mg)O for contact applications in solar cells

Rajbhandari

Bikowski

Perkins

et al. 2017

Solar Energy Materials and Solar Cells

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Development of tunable contact materials based on environmentally friendly chemical elements using scalable deposition approaches is necessary for existing and emerging solar energy conversion technologies. In this paper, the properties of ZnO alloyed with magnesium (Mg), and doped with gallium (Ga) are studied using combinatorial thin film experiments. As a result of these studies, the optical band gap of the sputtered Zn 1-x Mg x O thin films was determined to vary from 3.3 to 3.6 eV for a compositional spread of Mg content in the 0.04 < x < 0.17 range. Depending on whether or not Ga dopants were added, the electron concentrations were on the order of 10 17 cm -3 or 10 20 cm -3 , respectively. Based on these results and on the Kelvin Probe work function measurements, a band diagram was derived using basic semiconductor physics equations. The quantitative determination of how the energy levels of Gadoped (Zn,Mg)O thin films change as a function of Mg composition presented here, will facilitate their use as optimized contact layers for both Cu 2 ZnSnS 4 (CZTS), Cu(In,Ga)Se 2 (CIGS) and other solar cell absorbers.

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Section: Introductionmentioning

confidence: 99%

Combinatorial sputtering of Ga-doped (Zn,Mg)O for contact applications in solar cells

Rajbhandari

Bikowski

Perkins

et al. 2017

Solar Energy Materials and Solar Cells

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show abstract

“…. .O, and C-O bonds (532.06 ± 0.03 eV) due to surface contamination before the XPS measurement [10,22,28,54]. The oxygen O 1s binding energy difference between Zn-O and Zn-V O is related to varying electron density distribution (i.e., different chemical environments) depending on the presence or absence of oxygen ions.…”

Section: Resultsmentioning

confidence: 99%

Structural-crossover-induced optical band gap variation of Hf-doped ZnO films

Bae

Jeong

Park

2014

Applied Surface Science

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“…4, the variation of growth rate and film thickness can be divided into two regions at a boundary sputtering time of roughly 11 min: (1) growth rate decreases dramatically, but the film thickness increases slowly; (2) region II where the growth rate decreases slowly, but the film thickness increases dramatically. Three basic modes in thin film growth process are known: island (Volmer-Werber), layer (Frank-van der Merwe) and layer plus island (Stranski-Krastanov).…”

Section: Effect Of Sputtering Time On Growth Rate Of Zno/si Filmsmentioning

confidence: 99%

“…1 Tin doped indium oxide (ITO) and fluorine doped tin oxide (FTO) are the most commonly used TCO. However, the cost of In and the high temperature needed for FTO deposition are limiting steps for the development of commercially available TCOs.…”

Section: Introductionmentioning

confidence: 99%

Si doped ZnO thin films for transparent conducting oxides

Qin

Liu

Yuan

2013

Surface Engineering

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Transparent conductive silicon doped zinc oxide (SZO, 3%Si) thin films are grown by direct current magnetron sputtering on glass substrates at room temperature. Experimental results show that the sputtering time has a significance impact on the growth rate, crystal quality and electrical properties of the films, and have little impact on the optical properties of the films. The growth rate decreases with the sputtering time. The resistivity of ZnO/Si films decreases as the sputtering time increases from 8 to 20 min. However, as the sputtering time increases further, the electrical resistivity increases instead. When other sputtering conditions are kept unchanged, it is found that the optimum sputtering time is 20 min and the achieved lowest resistivity is 4?92610 24 V cm (sheet resistance511?5 V/sq for thickness 427?5 nm). The UV-vis transmission spectrum shows that all film samples present a transmission of above 90?0% in the visible range.

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Low temperature Si doped ZnO thin films for transparent conducting oxides

Cited by 88 publications

References 21 publications

Combinatorial sputtering of Ga-doped (Zn,Mg)O for contact applications in solar cells

Combinatorial sputtering of Ga-doped (Zn,Mg)O for contact applications in solar cells

Structural-crossover-induced optical band gap variation of Hf-doped ZnO films

Si doped ZnO thin films for transparent conducting oxides

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