Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys

Haider, Ali; Kizir, Seda; Özgit-Akgün, Çaǧla; Okyay, Ali Kemal; Bıyıklı, Necmi

doi:10.1116/1.4936072

Cited by 7 publications

(6 citation statements)

References 23 publications

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“…Several works on ALD and sequential CVD of BN have been published since the last fifteen years. 53,[58][59][60][61][62][63][64][65][66][67][68][69][70][71][72][73][74][75][76] However, the crystalline quality, due to the mild growth temperature used, still needs improvement and post annealing is usually employed. The different ALD strategies for BN (Table 1) will be discussed according to the type of boron precursor.…”

Section: Fabrication Of Bnmentioning

confidence: 99%

“…These limitations might be addressed using ALD. Several works on ALD and sequential CVD of BN have been published since the last fifteen years [53,[58][59][60][61][62][63][64][65][66][67][68][69][70][71][72][73][74][75][76]. However, the crystalline quality, due to the mild growth temperature used, still needs improvement and post annealing is usually employed.…”

Section: Fabrication Of Bnmentioning

confidence: 99%

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Atomic layer deposition of stable 2D materials

Hao¹,

Marichy²,

Journet³

2018

2D Mater.

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Following the graphene isolation, strong interest in two dimensional (2D) materials has been driven by their outstanding properties. Their typical intrinsic structure, including strong in-plane covalent bonding and weak out-of-plane Van der Waals interaction, makes them highly promising in diverse areas such as electronics, catalysis, and environment. Growth of 2D materials requires a synthesis approach able to control the deposition onto a support at the atomic scale. Thanks to their simplicity, versatility and ability to control thickness at the angstrom level, Atomic Layer Deposition (ALD) and its variant Atomic Layer Etching (ALET) appear as ones of the most suited techniques to synthesize 2D materials. The development of ALD technique for fabricating 2D materials in the last ten years justifies reviewing its most recent groundbreaking discoveries and progresses. Particular attention will be paid to stable 2D materials especially graphene, h-BN, Mo and W dichalcogenides and few monolayered metal oxides. Specificities and outputs of ALD for 2D material as well as emerging directions and remaining technical challenges will be highlighted. layers. This kind of materials exhibits interesting properties related to their size restriction: electronic confinement, modifying both optical and electronic properties, and high surface to volume ratio that affects the mechanical and chemical properties. 4,5 Therefore, 2D materials are highly attractive due to their potential in cutting edge domains such as micro-, and opto-electronics 4,6 as well as renewable energy, 4,7-9 catalysis, 10,11 gas sensing 12,13 and environment. 4,7,14,15 They are also exciting because of their possibility to be stacked into VdW heterostructures combining and/or tuning their chemical and physical properties. 6,[16][17][18] However, since 2D materials are atomically thin, a suitable manufacturing process capable of controlling their fabrication in terms of structure, composition, thickness, defects, purity and crystallinity without degradation of their original properties is necessary. Two approaches can be considered: the top-down and bottom-up synthetic routes. 19 Historically, top-down approach has first been developed using mechanical and chemical exfoliation techniques, 1,2,20,21 the first example being the well-known graphene exfoliation using scotch tape.Later on, etching processes have been adapted. Recently, Atomic Layer Etching (ALET), 22 the top down variant of Atomic Layer Deposition (ALD), has been introduced for fabricating 2D materials. On the other hand, bottom-up techniques have largely been developed using conventional thin film deposition. These techniques include sputtering, evaporation and Chemical Vapor Deposition (CVD). 3,23,24 However, they are mainly based on either high temperature processes, substrate restrictive deposition or low thickness control. 21,25,26 Amongst all the fabrication processes, ALD appears to be one of the most suited techniques to synthesize 2D materials, because of its simplicity, versatility and c...

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Section: Fabrication Of Bnmentioning

confidence: 99%

Section: Fabrication Of Bnmentioning

confidence: 99%

Atomic layer deposition of stable 2D materials

Hao¹,

Marichy²,

Journet³

2018

2D Mater.

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“…Towards this goal, we recently have demonstrated the low-temperature atomic layer deposition of ternary In x Ga 1−x N, B x Ga 1−x N, and B x In 1−x N alloys on Si substrates using a remotely integrated hollow-cathode plasma source. 23, 24 Nepal et al have reported atomic layer epitaxy (ALE) of InN thin films on sapphire, the conventional substrate material for III-nitride growth, utilizing quartz-based inductively coupled plasma source. 25 On the other hand, silicon, the material of choice for micro-electronics industry, offers cost-effective, large wafer-diameter, high-quality substrates with inherent CMOS manufacturing compatibility.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)

2016

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In this work, we report on self-limiting growth of InN thin films at substrate temperatures as low as 200 °C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The precursors used in growth experiments were trimethylindium (TMI) and N2 plasma. Process parameters including TMI pulse time, N2 plasma exposure time, purge time, and deposition temperature have been optimized for self-limiting growth of InN with in ALD window. With the increase in exposure time of N2 plasma from 40 s to 100 s at 200 °C, growth rate showed a significant decrease from 1.60 to 0.64 Å/cycle. At 200 °C, growth rate saturated as 0.64 Å/cycle for TMI dose starting from 0.07 s. Structural, optical, and morphological characterization of InN were carried out in detail. X-ray diffraction measurements revealed the hexagonal wurtzite crystalline structure of the grown InN films. Refractive index of the InN film deposited at 200 °C was found to be 2.66 at 650 nm. 48 nm-thick InN films exhibited relatively smooth surfaces with Rms surface roughness values of 0.98 nm, while the film density was extracted as 6.30 g/cm3. X-ray photoelectron spectroscopy (XPS) measurements depicted the peaks of indium, nitrogen, carbon, and oxygen on the film surface and quantitative information revealed that films are nearly stoichiometric with rather low impurity content. In3d and N1s high-resolution scans confirmed the presence of InN with peaks located at 443.5 and 396.8 eV, respectively. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) further confirmed the polycrystalline structure of InN thin films and elemental mapping revealed uniform distribution of indium and nitrogen along the scanned area of the InN film. Spectral absorption measurements exhibited an optical band edge around 1.9 eV. Our findings demonstrate that HCPA-ALD might be a promising technique to grow crystalline wurtzite InN thin films at low substrate temperatures.

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“…The most common precursors for ALD of InN are In(CH 3 ) 3 and N 2 plasma [154][155][156][157]. Atomic layer epitaxy of InN has been reported using In(CH 3 ) 3 and N 2 plasma as reactants and novel cubic or a hexagonal phase of InN were synthesized [158].…”

Section: Nitridesmentioning

confidence: 99%

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Bıyıklı

Haider

2017

Semicond. Sci. Technol.

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In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/ quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

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Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys

Cited by 7 publications

References 23 publications

Atomic layer deposition of stable 2D materials

Atomic layer deposition of stable 2D materials

Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

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