Low-Temperature Screen-Printed Metallization for the Scale-Up of Two-Terminal Perovskite–Silicon Tandems

Abstract

Tandem photovoltaic devices based on perovskite and crystalline silicon (PK/c-Si) absorbers have the potential to push commercial silicon single junction devices beyond their current efficiency limit. However, their scale-up to industrially relevant sizes is largely limited by current fabrication methods which rely on evaporated metallization of the front contact instead of industry standard screen-printed silver grids. To tackle this challenge, we demonstrate how a low-temperature silver paste applied by a screen-printing process can be used for the front metal grid of two-terminal perovskite–silicon tandem structures. Small-area tandem devices with such printed front metallization show minimal thermal degradation when annealed up to 140 °C in air, resulting in silver bulk resistivity of <1 × 10–5 Ω·cm. This printed metallization is then exploited in the fabrication of large area PK/c-Si tandems to achieve a steady-state efficiency of 22.6% over an aperture area of 57.4 cm2 with a two-bus bar metallization pattern. This result demonstrates the potential of screen-printing metal contacts to enable the realization of large area PK/c-Si tandem devices.

I2 vapor-induced degradation of formamidinium lead iodide based perovskite solar cells under heat–light soaking conditions

“…The detailed preparation procedure can be found elsewhere. 85 As shown in the ESI, † Fig. S21, the Cs 0.17 -FA 0.83 Pb(I 0.83 Br 0.17 ) 3 perovskite absorber is more stable than MAPbI 3 :MABr (2.5 mg ml À1 ) and FAPbI 3 :MABr (10 mg ml À1 ) under the same HLS conditions.…”

23.5%-efficient silicon heterojunction silicon solar cell using molybdenum oxide as hole-selective contact

“…8), with a remarkable FF close to 82%. This record efficiency for such solar cell was obtained without any masking step or photolithography and uses a low-temperature Ag screenprinted metallization causing ~3% shadowing [45], [53] [54].…”

“…Following these considerations, we vary here the thicknesses of the (i)a-Si:H and MoOx layers in SHJ devices and discuss their influence on the optical and electrical performance of the cell. Furthermore, a low temperature curing paste is employed to avoid degradation and to assess the potential of this contact strategy using state-of-the-art SHJ processing [40] [45]. Fig.…”

Barrier Designs in Perovskite Solar Cells for Long‐Term Stability

“…Moreover, they can also act as excellent barriers to prevent damages induced by metal diffusion and outside moisture and inside halogen. [248][249][250][251][252][253][254] However, proper buffer layers are required to protect the under layers when sputter ITO or (indium zinc oxide) IZO as electrodes in semitransparent PSCs and tandem PSCs due to the strong power of sputtering. Boyd et al deposited an impermeable ITO layer on the top of PCBM layer.…”