Low temperature processing of lanthanum doped PZT thin films

Abstract

PLZT .5/30/70 sols for thin film deposition have been prepared from lead oxide, lanthanum nitrate and transition metal n-butoxides in a series of etheralcohols. After the low temperature heat treatment at 200°C for 2 minutes and at 400°C for 5 minutes the PLZT 5/30/70 thin films crystallize in the perovskite phase and exhibit ferroelectric response. To our knowledge, this is the lowest crystallization temperature of perovskite phase observed for titanium rich PLZT.

Preparation and characteristics of nanoporous PLZT ferroelectric thin films prepared via a one-step CSD process

“…Their results show that the (1 0 0) plane has the lowest surface energy, since the (1 0 0) plane has the highest planar atomic density and is electrically neutral. Some (1 0 0) oriented Pb-based ferroelectric thin films, such as (Pb,La)TiO 3 [9] and (Pb,La,Ca)TiO 3 [4,10], have been reported recently. For porous thin films, nucleation can occur at the surface of pores besides both the aforementioned factors.…”

“…Ferroelectric thin films have been deposited by a variety of techniques, such as pulsed laser deposition [1], chemical vapor deposition [2], RF magnetron sputtering [3], and chemical solution deposition (CSD) [4]. Of various techniques for preparing ferroelectric thin films, the CSD method holds attractive advantages due to the fact that extremely uniform compositions over large areas can be obtained through a simple process and at low cost.…”

“…Pb-based ferroelectric thin films such as Pb(Zr,Ti)O 3 (PZT) and (Pb,La) (Zr,Ti)O 3 (PLZT) are attracting wide attention because of their excellent ferroelectric, dielectric, pyroelectric and piezoelectric properties [1][2][3][4][5]. Ferroelectric thin films have been deposited by a variety of techniques, such as pulsed laser deposition [1], chemical vapor deposition [2], RF magnetron sputtering [3], and chemical solution deposition (CSD) [4].…”

Low-Temperature Solution Approaches for the Potential Integration of Ferroelectric Oxide Films in Flexible Electronics

“…also prepared ferroelectric Ti-rich PZT films at 400C with considerable P R values ( 30 µC cm -2 ) from high homogeneous solutions. [66,69,96,97] These were synthesized by a selective modification of the Zr reagent with acetic acid that led to precursors formed by dimeric Zr organizations with bridgindg alkoxide groups.…”

“…1). [11,12,14,39,40,44,46, Fukushima et al, [74] and Budd et al, [75,76] were among the first that demonstrated the successful fabrication of ferroelectric oxide thin films (PbTiO 3 , Pb(Zr,Ti)O 3 , PZT and 2014 [39] 2010 [46] 2019 [40] 2017 [44] 2017 [73] 2015 [72] 2014 [11] 2020 [71] 2011 [63][64][65] 2014 [62] 2008 [68] 2010 [67] 1999 [61] 2020 [70] 2003 [69] 2004 [12] 2000 [66] 2014 [62] 2016 [58] 2008 [57] 2017 [56] 2008 [14] 2001 [60] 2013 [59] 2018 [52] 2003 [53] 2000 [54] 2009 [55] The graphic shows the ferroelectric composition of the film, the processing temperature at which they were processed and the ferroelectric remanent polarization (PR) measured in them. The CSD strategy/ies used for the low-temperature solution processing of the films are also shown.…”