2016
DOI: 10.1007/s12274-016-1051-8
|View full text |Cite
|
Sign up to set email alerts
|

Low-temperature processed solar cells with formamidinium tin halide perovskite/fullerene heterojunctions

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
75
0

Year Published

2016
2016
2022
2022

Publication Types

Select...
7
2

Relationship

0
9

Authors

Journals

citations
Cited by 92 publications
(75 citation statements)
references
References 35 publications
0
75
0
Order By: Relevance
“…Accord-5 ing to the cross-sectional SEM image of the device (Figure S12), the thicknesses of the perovskite, NiO x , and PCBM layers are approximately 200 nm, 50 nm, and 100 nm, respectively. The high FF value can be ascribed to suppressed defect-mediated carrier recombination, as well as balanced carrier transport [43][44][45][46] . High density of pinholes were found in the films with too much or too little SnF 2 .…”
Section: Resultsmentioning
confidence: 99%
“…Accord-5 ing to the cross-sectional SEM image of the device (Figure S12), the thicknesses of the perovskite, NiO x , and PCBM layers are approximately 200 nm, 50 nm, and 100 nm, respectively. The high FF value can be ascribed to suppressed defect-mediated carrier recombination, as well as balanced carrier transport [43][44][45][46] . High density of pinholes were found in the films with too much or too little SnF 2 .…”
Section: Resultsmentioning
confidence: 99%
“…Although, the device PCE did not exceed 1.7%, the as‐deposited MASnI 3 thin films yielded an effectively controlled stoichiometry with improved morphological and electronic properties without the use of SnF 2 additive. Notably the inverted device structure such as in Figure c, has proven to be the most favorable for PV response in Sn halide perovskites . Although inferior performances have been obtained for Sn halide perovskite based solar cells relative to their Pb halide perovskite based counterparts, careful control of film deposition conditions coupled with the adoption of inverted device architecture can help create high quality films with reduced charge recombination and negligible hysteresis as shown in Figure c.…”
Section: Preparation Methods Of Sn Halide Perovskite Filmsmentioning
confidence: 99%
“…Tin‐based lead‐free perovskites are considered unsuitable for planar heterojunction solar cells due to their short diffusion lengths, a SPCE of 1.72% is shown by FASnI 2 Br films as a light absorber with C 60 as ETM suggesting the significance of perovskite film morphology on the device performance. FASnI 2 Br films with an architecture ITO/PEDOT:PSS/FASnI 2 Br/ C 60 /Ca/Al reported a J SC of 6.82 mA cm −2 and V OC of 0.46 mV . Figure shows the structure of (a) FASnI 2 Br (SEM image) and (b) FASnI 3 (SEM image) and energy band diagram …”
Section: Hole Transport Materials and Electron Transport Materials In Lmentioning
confidence: 99%
“…FASnI 2 Br films with an architecture ITO/PEDOT:PSS/FASnI 2 Br/ C 60 /Ca/Al reported a J SC of 6.82 mA cm −2 and V OC of 0.46 mV . Figure shows the structure of (a) FASnI 2 Br (SEM image) and (b) FASnI 3 (SEM image) and energy band diagram …”
Section: Hole Transport Materials and Electron Transport Materials In Lmentioning
confidence: 99%