Low-temperature-processed (<100 °C) organic thin-film transistor using hollow-cathode CVD SiO₂as the gate insulator

Abstract

We report on a low-temperature-processed organic thin-film transistor (OTFT) using hollow-cathode chemical vapor deposition (HC-CVD) SiO 2 as the gate insulator below a processing temperature of 100 • C. The physical properties of SiO 2 deposited using the HC-CVD are studied using various deposition temperatures, RF powers and TEOS/O 2 ratios. OTFTs with HC-CVD-deposited SiO 2 gate insulators were fabricated below 100 • C without the gate insulator surface treatment. We obtained good OTFT electrical characteristics including a threshold voltage (V TH ) of −2.9 V, a field-effect mobility (μ FE ) of 2.3 × 10 −2 cm 2 V −1 s −1 , a sub-threshold swing (SS) of 0.516 V/decade and an on/off current ratio (I on /I off ) of 1.27 × 10 5 . To our knowledge, this is the first time that the low-temperature deposition (<100 • C) of SiO 2 using the HC-CVD technique was successfully applied to OTFT gate insulator fabrication.

Solution processable high quality ZrO2dielectric films for low operation voltage and flexible organic thin film transistor applications

“…Conventional methods previously reported for the pro cessing of inorganic dielectric materials mainly rely on vacuumbased deposition (e.g. magnetron sputtering [14], chemical vapor deposition [15], atomic layer deposition [16] and ebeam evaporation [17]). These methods have proven to be able to deposit very thin films with good electrical and mechanical properties, thus efficiently resolving the limita tions concerning scaling issues [18].…”

Investigation on the electrical characteristics of a pentacene thin-film transistor and its reliability under positive drain bias stress

“…Researchers have significantly improved the performance of pentacene-based organic thin-film transistors (OTFTs) over the past few years, making it possible to use OTFTs as driving devices in high-resolution active matrix flat panel displays (AMFPDs) [1,2]. Since OTFTs offer the advantages of being lightweight and flexible, and can be fabricated with low-temperature and low-cost processes [3,4], they may be combined with organic light emitting diodes (OLEDs) on plastic substrates to achieve flexible AMOLED displays. These applications require high and stable device performance to ensure image quality.…”

Effect of Inserting Teflon as a Surface Modification Layer on Bottom-Contact Pentacene-Based Organic Thin-Film Transistors

“…Pentacene-based organic thin-film transistors (OTFTs) have received great attention over the last decade because they offer the advantages of being lightweight and flexible, and can be fabricated using low-temperature and low-cost processes, [1][2][3] enabling OTFTs to be used in novel electronic devices, such as radio-frequency identification tags, largearea sensors, and active-matrix flat-panel display backplane driving circuits. [4][5][6] The performance of pentacene-based OTFTs is known to be significantly affected by the growth quality of pentacene film, which is determined by the interface property between the gate insulator and the pentacene film.…”