Low Temperature Preparation of TiO&lt;sub&gt;2&lt;/sub&gt; Thin Films by Plasma-Enhanced Chemical Vapor Deposition

Kumashiro, Yoshimasa; Kinoshita, Yoshiki; Takaoka, Y.; Murasawa, Sadao

doi:10.2109/jcersj.101.514

Cited by 18 publications

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“…Among the polymorphs of TiO 2 , the rutile phase, in particular, has been the subject of many experimental and theoretical investigations because it is thermodynamically the most stable phase. Recently, it has been reported that epitaxial films of rutile TiO 2 were successfully grown on semiconductor and oxide substrates, such as Si, 4) GaAs, 5) MgO, 6) and Al 2 O 3 . 7) Nowadays, the GaN-based technology sustains an explosive growth of optoelectronics, initiated by the invention of blue light-emitting diodes (LEDs) and blue laser diodes.…”

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confidence: 99%

Heteroepitaxial Growth of Rutile TiO₂ on GaN(0001) by Pulsed Laser Deposition

Hitosugi

Hirose

Kasai

et al. 2005

Jpn. J. Appl. Phys.

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Rutile TiO 2 (100) thin films have been grown on GaN(0001) surfaces by using the pulsed laser deposition method. Reflection high-energy electron diffraction (RHEED) measurements during the deposition clearly revealed the layer-by-layer growth of TiO 2 at a substrate temperature of 400 C under an oxygen pressure of 1 Â 10 À5 Torr. X-ray diffraction and atomic force microscopy confirmed that the obtained films have high crystallinity with atomically flat surfaces. Pole figure measurements revealed the epitaxial relationship between TiO 2 and GaN, namely that the in-plane TiO 2 h010i axis aligns parallel to the GaNh10 1 10i.

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confidence: 99%

Heteroepitaxial Growth of Rutile TiO₂ on GaN(0001) by Pulsed Laser Deposition

Hitosugi

Hirose

Kasai

et al. 2005

Jpn. J. Appl. Phys.

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“…However, in order to realize clean and safe chemical processes, as well as the use of abundant solar energy, photocatalysts able to operate even under visible light irradiation are strongly desired. Since an important consideration for widespread and practical applications is the cost to prepare the TiO 2 thin film photocatalysts, various preparation methods such as the sol-gel method [4][5][6][7], chemical vapor deposition (CVD) method [8][9][10], and plasma-enhanced CVD method [11][12][13], have been intensively investigated. Among these methods, the radio frequency (RF) magnetron sputtering deposition method described here was found to be suitable for practical applications, since it enables not only a high-speed deposition, but also the deposition of thin films on various substrates with large areas.…”

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confidence: 99%

Preparation of the visible light responsive TiO2 thin film photocatalysts by the RF magnetron sputtering deposition method

et al. 2009

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TiO 2 thin film photocatalysts which could induce photoreactions under visible light irradiation were successfully developed in a single process by applying an ion engineering technique, i.e., the radio frequency (RF) magnetron sputtering deposition method. The TiO 2 thin films prepared at temperatures greater than 773 K showed the efficient absorption of visible light; on the other hand, the TiO 2 thin films prepared at around 573 K were highly transparent. This clearly means that the optical properties of TiO 2 thin films, which absorb not only UV but also visible light, can be controlled by the preparation temperatures of the RF magnetron sputtering deposition method. These visible light responsive TiO 2 thin films were found to exhibit effective photocatalytic reactivity under visible light irradiation (k [ 450 nm) at 275 K for the reductive decomposition of NO into N 2 and N 2 O. From various characterizations, the orderly aligned columnar TiO 2 crystals could be observed only for the visible light responsive TiO 2 thin films. This unique structural factor is expected to modify the electronic properties of a TiO 2 semiconductor, enabling the efficient absorption of visible light.

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“…Recently, epitaxial rutile-phase TiO 2 films were successfully grown on Si͑100͒ substrate 7 and oxide substrates such as MgO, 8 SrTiO 3 , and sapphire. 9 However, to our knowledge, the epitaxial growth of TiO 2 thin films on GaAs substrates has not yet been reported.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of TiO2 thin films by pulsed laser deposition on GaAs(100) substrates

Liu

Chen

Yin

et al. 2001

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Low Temperature Preparation of TiO<sub>2</sub> Thin Films by Plasma-Enhanced Chemical Vapor Deposition

Cited by 18 publications

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Heteroepitaxial Growth of Rutile TiO₂ on GaN(0001) by Pulsed Laser Deposition

Heteroepitaxial Growth of Rutile TiO₂ on GaN(0001) by Pulsed Laser Deposition

Preparation of the visible light responsive TiO2 thin film photocatalysts by the RF magnetron sputtering deposition method

Epitaxial growth of TiO2 thin films by pulsed laser deposition on GaAs(100) substrates

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Low Temperature Preparation of TiO<sub>2</sub> Thin Films by Plasma-Enhanced Chemical Vapor Deposition

Cited by 18 publications

References 0 publications

Heteroepitaxial Growth of Rutile TiO2 on GaN(0001) by Pulsed Laser Deposition

Heteroepitaxial Growth of Rutile TiO2 on GaN(0001) by Pulsed Laser Deposition

Preparation of the visible light responsive TiO2 thin film photocatalysts by the RF magnetron sputtering deposition method

Epitaxial growth of TiO2 thin films by pulsed laser deposition on GaAs(100) substrates

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Heteroepitaxial Growth of Rutile TiO₂ on GaN(0001) by Pulsed Laser Deposition

Heteroepitaxial Growth of Rutile TiO₂ on GaN(0001) by Pulsed Laser Deposition