Low temperature preparation and characterization of (Ga1−xZnx)(N1−yOy) alloy nanostructures using electrospun nanofibers as source materials

Li, X.H.; Shao, Changlu; Wang, D.; Zhang, X.; Zhang, P.; Liu, Yichun

doi:10.1016/j.ceramint.2013.09.089

Cited by 5 publications

(4 citation statements)

References 35 publications

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“…While there is a copious amount of works reported on the isovalent III-V compounds, the study of the non-isovalent III-V compounds is severely limited [3,4,23,[25][26][27][28][29][30][31][32][33] and mostly focused more on the superlattice heterostructures rather than on alloys. The present work is dedicated to the non-isovalent compounds (ZnO) 1−x (III-V) x , (III-V) = GaN, AlN, AlP, BN, BP; it includes a two level model description as well as the results from ab initio calculations.…”

Section: Discussionmentioning

confidence: 99%

ZnO gap engineering by doping with III–V compounds

Andriotis

Menon

2016

J. Phys.: Condens. Matter

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Gap engineering of ZnO by codoping it with III-V materials is investigated using model and ab initio calculation. Our results show that the codoped materials (ZnO)1-x (III-V)x , where (III-V) stands for GaN, AlN, AlP, BN, BP exhibit energy band gaps that get smaller as the dopant concentrations x is increased. Even at a very small dopant concentration the obtained band gaps are found to be much smaller than that of ZnO making the studied (ZnO)1-x(III-V)x materials promising candidates for photoelectrochemical water splitting.

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Section: Discussionmentioning

confidence: 99%

ZnO gap engineering by doping with III–V compounds

Andriotis

Menon

2016

J. Phys.: Condens. Matter

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“…Herein, the p O 2 value present in the gas-phase composition of the nitridation mixture is shown to reduce volatilization of Zn and leads to Zn-rich GZNO. This example illustrates the importance of gaseous reactants in addition to the use of high Zn/Ga and kinetically less-hindered precursors ,, to achieve high-Zn-containing GZNO.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of (Ga_1–xZn_x)(N_1–xO_x) with Enhanced Visible-Light Absorption and Reduced Defects by Suppressing Zn Volatilization

Chen

Skrabalak

2016

Inorg. Chem.

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(Ga1-xZnx)(N1-xOx) (GZNO) particles with enhanced optical absorption were synthesized by topotactic transformation of Zn(2+)/Ga(3+) layered double hydroxides. This outcome was achieved by suppressing Zn volatilization during nitridation by maintaining a low partial pressure of O2 (pO2). Zn-rich (x > (1)/3) variants of GZNO were achieved and compared to those prepared by conventional ammonoylsis conditions. The optical absorption and structural properties of these samples were compared to those prepared in the absence of O2 by diffuse-reflectance spectroscopy and powder X-ray diffraction methods. Notably, suppression of Zn volatilization leads to smaller-band-gap materials (2.30 eV for x = 0.42 versus 2.71 eV for x = 0.21) and reduced structural defects. This synthetic route and set of characterizations provide useful structure-property studies of GZNO and potentially other oxynitrides of interest as photocatalysts.

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“…The tremendous potentiality of the doping, derives from its possibility for enabling injection into a material either charge carriers (holes or electrons) or impurity atoms and impurity complexes (magnetic or non-magnetic) or even compounddopants [190][191][192][193][194][195][196][197][198][199][200][201][202].…”

Section: Codoping and Band Gap Engineeringmentioning

confidence: 99%

Codoping induced enhanced ferromagnetism in diluted magnetic semiconductors

Andriotis¹,

Menon²

2021

J. Phys.: Condens. Matter

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The experimentally observed d 0-magnetism and its subsequent attribution to the presence of structural and topological defects has opened the way for engineering the magnetic properties of diluted magnetic semiconductors (DMSs) and transition metal oxides (TMOs). Doping and codoping constitute the most commonly used processes (either experimentally or theoretically) for developing and studying this type of defect-induced magnetism. The focus of the present review is to highlight the basic features of the defect magnetism which have been observed over diverse systems, while emphasizing the local, holistic and synergistic response of the host materials to their doping and investigating their role in the development of the magnetic coupling (MC) that is developed among the magnetic dopants. Ab initio computational results elucidate the local aspects of the MC (charge and spin transfers between dopants and their first nearest neighboring anion ligands) and their relation with holistic processes which are reflected in the band structure, and the shifts of both the d- and p-band centers of the doped material (compared to the undoped one). In view of these results the MC between the magnetic dopants is framed within the newly proposed successive spin polarization and the defect-induced defect-mediated models. The similarities found in the magnetic characteristics between the codoped DMSs/TMOs and the magnetic multilayer systems lends further support to these models which introduce new contributions to the MC that are competitive with the existing classical ones (superexchange, double exchange, s–d & p–d couplings etc).

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Low temperature preparation and characterization of (Ga1−xZnx)(N1−yOy) alloy nanostructures using electrospun nanofibers as source materials

Cited by 5 publications

References 35 publications

ZnO gap engineering by doping with III–V compounds

ZnO gap engineering by doping with III–V compounds

Synthesis of (Ga_1–xZn_x)(N_1–xO_x) with Enhanced Visible-Light Absorption and Reduced Defects by Suppressing Zn Volatilization

Codoping induced enhanced ferromagnetism in diluted magnetic semiconductors

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Low temperature preparation and characterization of (Ga1−xZnx)(N1−yOy) alloy nanostructures using electrospun nanofibers as source materials

Cited by 5 publications

References 35 publications

ZnO gap engineering by doping with III–V compounds

ZnO gap engineering by doping with III–V compounds

Synthesis of (Ga1–xZnx)(N1–xOx) with Enhanced Visible-Light Absorption and Reduced Defects by Suppressing Zn Volatilization

Codoping induced enhanced ferromagnetism in diluted magnetic semiconductors

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Synthesis of (Ga_1–xZn_x)(N_1–xO_x) with Enhanced Visible-Light Absorption and Reduced Defects by Suppressing Zn Volatilization