Low‐Temperature Poly‐Si Thin‐Film Transistor with High‐k ZrAlOx Gate Insulator with SiO2 Blocking Layer
Yuna Kim,
Byunglib Jung,
Md Mobaidul Islam
et al.
Abstract:Low‐power electronic devices are of increasing interest with high‐k gate insulators (GI). Herein, the performance and stability of low‐temperature poly‐Si (LTPS) thin‐film transistors (TFTs) are investigated with two different GIs: spray pyrolyzed zirconiumaluminum oxide (ZAO) directly deposited on poly‐Si, and SiO2/ZAO stack GI. The LTPS TFT with SiO2/ZAO stack GI exhibits hysteresis free characteristics with a threshold voltage of −0.2 V, field‐effect mobility of 114.4 cm2 V−1 s−1, subthreshold swing of 0.10… Show more
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