Low-temperature plasma-enhanced chemical vapour deposition of transfer-free graphene thin films

Othman, Maisara; Ritikos, Richard; Hafiz, Syed Muhammad; Khanis, Noor Hamizah; Rashid, Nur Maisarah Abdul; Rahman, Saadah Abdul

doi:10.1016/j.matlet.2015.06.039

Cited by 15 publications

(8 citation statements)

References 9 publications

(12 reference statements)

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“…Graphene films prepared on cobalt layers with a thickness of 100 nm have a high homogeneity, as deduced from the low ID/IG ratio, but as for the thickness of the graphene film the structure with 50 nm of cobalt is better. The crystal size of the graphene film is within the range from 180 to 600 nm [4]. With a 200 nm thick Co layer we obtained only amorphous carbon (aC).…”

Section: Resultsmentioning

confidence: 96%

“…The accuracy of measurements was affected by the low quality of contacts. Finally, we try to compare the parameters of our graphene films with graphene layers prepared by a similar technique [4,5]. In [4], few-layer graphene was prepared.…”

Section: Resultsmentioning

confidence: 99%

“…Such graphene films exhibit worse homogeneity and possible contamination by residues of the polymers that are used in the transfer process. This problem can be overcome using the so-called CVD transfer-free method [4,5] which makes possible to prepare graphene directly on a dielectric substrate (SiO 2 /Si) without any transfer. In our experiments we applied a cobalt layer and a resistively heated stage cold-wall CVD reactor with highefficiency heating.…”

Section: Introductionmentioning

confidence: 99%

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Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

Macháč

Hejna

Slepička

2017

Journal of Electrical Engineering

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The contribution deals with the preparation of graphene films by a transfer-free chemical vapour deposition process utilizing a thin cobalt layer. This method allows growing graphene directly on a dielectric substrate. The process was carried out in a cold-wall reactor with methane as carbon precursor. We managed to prepare bilayer graphene. The best results were obtained for a structure with a cobalt layer with a thickness of 50 nm. The quality of prepared graphene films and of the number of graphene layers were estimated using Raman spectroscopy. with a minimal dots diameter of 180 nm and spacing of 1000 nm were successfully developed.

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Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

Macháč

Hejna

Slepička

2017

Journal of Electrical Engineering

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“…These materials have been fabricated using a variety of techniques, including exfoliation, pyrolysis chemical vapor deposition, and magnetron sputtering . These techniques are, however, often constrained by the need for metal catalysts, special substrate preparation, high processing temperatures or pressures, and complex procedures for transferring the film after synthesis …”

Section: Introductionmentioning

confidence: 99%

“…and power sources (dc, ac, pulsed, etc.) have been employed to produce graphene and polymeric pinhole‐free thin films with tailorable thickness, surface functionality, complex refractive index, and electrical conductivity . The polymer under investigation in this study, polyterpenol, is a stable plasma polymer that exhibits a diverse range of characteristics that make it suitable for use as an antibacterial coating, encapsulating or insulating layer for electronic devices, and electron‐blocking/hole‐transport layer in organic transistors .…”

Section: Introductionmentioning

confidence: 99%

Formation of nanocrystalline and amorphous carbon by high fluence swift heavy ion irradiation of a plasma polymerized polyterpenol thin film precursor

Grant

Siegele

Bazaka

et al. 2018

J of Applied Polymer Sci

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This study aimed to produce graphitic-polymer nanocomposite thin films via the swift heavy ion irradiation of polyterpenol thin films synthesized from an environmentally sustainable precursor by radio-frequency plasma enhanced chemical vapor deposition. Atomic force microscopy and scanning electron microscopy revealed fluence-dependent surface restructuring of the thin films leading to the formation of interconnected island structures, with no discernible delamination from the underlying aluminum substrate. Raman spectroscopy confirmed the development of D and G peaks associated with graphitic materials, whilst Fourier transform infrared spectroscopy indicated retention of the plasma polymer's chemical functionalities (including hydroxyl groups) within the material after irradiation. Graphitic-polymer nanocomposite films prepared by this dry and solvent-free process have numerous potential applications in biological assay, organic electronics, and membrane technology.

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Fabrication Routes of Graphene

Yip

Tong

2023

Graphene

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Low-temperature plasma-enhanced chemical vapour deposition of transfer-free graphene thin films

Cited by 15 publications

References 9 publications

Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

Formation of nanocrystalline and amorphous carbon by high fluence swift heavy ion irradiation of a plasma polymerized polyterpenol thin film precursor

Fabrication Routes of Graphene

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