Low Temperature Plasma-Assisted-Wafer-Bonding for MEMS

Sanz-Velasco, Anke; Bring, Martin; Enoksson, Peter

doi:10.1149/ma2006-02/30/1389

Cited by 2 publications

(3 citation statements)

References 3 publications

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“…The mechanical strength of low-temperature direct silicon bonds is commonly assessed by its surface energy. 5,6,10 Energies above 1 J/m 2 are considered to indicate strong bonds. However, application in device packaging commonly requires that the tensile and shear strengths are known.…”

Section: Discussionmentioning

confidence: 99%

“…2 The method and its mechanism have been subject to thorough studies. [1][2][3][4][5][6][7][8][9][10][11][12][13] However, studies investigating parameters that are relevant for device applications, presenting measurements on larger number of devices, are scarce. To our knowledge, only one estimate of the leak rate across plasma bonded seals has been presented, 8 and one study presents simultaneous measurements of surface energy and electrical properties.…”

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confidence: 99%

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Electrical, Mechanical, and Hermetic Properties of Low-Temperature, Plasma Activated Direct Silicon Bonded Joints

Schjølberg-Henriksen

Malik

Gundersen

et al. 2015

ECS J. Solid State Sci. Technol.

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The electrical, mechanical, and hermeticity properties of low-temperature, plasma activated direct silicon bonds were investigated. On individual dies with a bonding area ranging from 1-4 mm 2 , the bonded interface was found to have a capacitance ranging from 2.62 pF/mm 2 -2.89 pF/mm 2 at 1 kHz. Linear I-V curves showed ohmic behavior without hysteresis. A resistance around 2.2 and a current density of 1.1 × 10 4 A/m 2 was measured at DC. We speculate that the capacitive and resistive responses are related to traps that are formed during the plasma activation process. The applied bonding process resulted in hermetic sealing with 100% yield on 2 × 481 dies. The maximum leak rate of the seals was 2.4 × 10 −11 mbar·l·s −1 , but could be significantly lower. No gross leaks were observed following a steady-state life test, a thermal shock test, and a moisture resistance test applied on 100 dies.

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Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

Electrical, Mechanical, and Hermetic Properties of Low-Temperature, Plasma Activated Direct Silicon Bonded Joints

Schjølberg-Henriksen

Malik

Gundersen

et al. 2015

ECS J. Solid State Sci. Technol.

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show abstract

“…plasma bonding, (2) is one method for solving the problem. The method and its mechanism have been subject to thorough studies (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13). However, studies investigating parameters that are relevant for device applications, presenting measurements on larger number of devices, are scarce.…”

Section: Introductionmentioning

confidence: 99%

Electrical, Mechanical, and Hermeticity Properties of Low-Temperature, Plasma Activated Direct Silicon Bonded Joints

Schjølberg-Henriksen¹,

Malik²,

Gundersen³

et al. 2014

ECS Trans.

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The electrical, mechanical, and hermeticity properties of low-temperature, plasma activated direct silicon bonds were investigated. On individual dies with a bonding area ranging from 1 – 4 mm2, the bonded interface was found to have a capacitance ranging from 2.62 pF/mm2 – 2.89 pF/mm2 at 1 kHz. Linear I-V curves showing ohmic behavior without hysteresis and a resistance around 2.2 W were measured at DC voltage. We speculate that the capacitive and resistive responses are related to traps that are formed during the plasma activation process. The applied bonding process resulted in hermetic sealing with 100% yield on 2 × 481 dies. The maximum leak rate of the seals was 3.5 × 10-11 mbar×l×s-1, but could be significantly lower. No gross leaks were observed following a steady-state life test, a thermal shock test, and a moisture resistance test applied on 100 dies.

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Low Temperature Plasma-Assisted-Wafer-Bonding for MEMS

Abstract: not Available.

Cited by 2 publications

References 3 publications

Electrical, Mechanical, and Hermetic Properties of Low-Temperature, Plasma Activated Direct Silicon Bonded Joints

Electrical, Mechanical, and Hermetic Properties of Low-Temperature, Plasma Activated Direct Silicon Bonded Joints

Electrical, Mechanical, and Hermeticity Properties of Low-Temperature, Plasma Activated Direct Silicon Bonded Joints

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