Low temperature photoluminescence properties of CsPbBr<sub>3</sub> quantum dots embedded in glasses

Ai, Bing; Liu, Chao; Deng, Zhao; Wang, Jing; Han, Jianjun; Zhao, Xiujian

doi:10.1039/c7cp02482g

Cited by 115 publications

(90 citation statements)

References 54 publications

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“…Previously, it was shown that in glass-embedded perovskite QDs, the mechanism of the line broadening strongly depends on the QD size. Specifically, in small-size QDs (~6 nm) it is the exciton-LO-phonon interaction, while in large-size QDs (~10 nm), it is the exciton-acousticphonon scattering [32]. In agreement with this previous assessment, in our ~11 nm QDs the dominant contribution to line broadening is provided by effects of exciton-acoustic-phonon scattering.…”

Section: Temperature-dependent Emission Spectra and Emission Quantum supporting

confidence: 90%

Transient Spectroscopy of Glass-Embedded Perovskite Quantum Dots: Novel Structures in an Old Wrapping

Kozlov

Singh

et al. 2018

Zeitschrift Für Physikalische Chemie

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Semiconductor doped glasses had been used by the research and engineering communities as color filters or saturable absorbers well before it was realized that their optical properties were defined by tiny specs of semiconductor matter known presently as quantum dots (QDs). Nowadays, the preferred type of QD samples are colloidal particles typically fabricated via organometallic chemical routines that allow for exquisite control of QD morphology, composition and surface properties. However, there is still a number of applications that would benefit from the availability of high-quality glassbased QD samples. These prospective applications include fiber optics, optically pumped lasers and amplifiers, and luminescent solar concentrators (LSCs). In addition to being perfect optical materials, glass matrices could help enhance stability of QDs by isolating them from the environment and improving heat exchange with the outside medium. Here we conduct optical studies of a new type of all-inorganic CsPbBr 3 perovskite QDs fabricated directly in glasses by hightemperature precipitation. These samples are virtually scattering free and exhibit excellent waveguiding properties which makes them well suited for applications in, for example, fiber optics and LSCs. However, the presently existing problem is their fairly low room-temperature emission quantum yields of only ca. 1 -2%. Here we investigate the reasons underlying the limited emissivity of these samples by conducting transient photoluminescence (PL) and absorption measurements across a range of temperatures from 20 -300 K. We observe that the low-temperature PL quantum yield of these samples can be as high as ~25%. However, it quickly drops (in a nearly linear fashion) with increasing temperature. Interestingly, contrary to traditional thermal quenching models, experimental observations cannot be explained in terms of a thermally activated nonradiative rate but rather suggest the existence of two distinct QD sub-ensembles of "emissive" and completely "nonemissive" particles. The temperature-induced variation in the PL efficiency is likely due to a structural transformation of the QD surfaces or interior leading to formation of extremely fast trapping sites or nonemissive phases resulting in conversion of emissive QDs into nonemissive. Thus, future efforts on improving emissivity of glass-based perovskite QD samples might focus on approaches for extending the range of stability of the low-temperature up to room temperature.

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Section: Temperature-dependent Emission Spectra and Emission Quantum supporting

confidence: 90%

Transient Spectroscopy of Glass-Embedded Perovskite Quantum Dots: Novel Structures in an Old Wrapping

Kozlov

Singh

et al. 2018

Zeitschrift Für Physikalische Chemie

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“…The recombination of the holes and the electrons are then responsible for the EL emission and bright green light with an emission area of ≈4.35 mm 2 has been achieved (Figure g inset), which shows great potential for large‐area light‐emitting devices. As illustrated in Figure g, the CsPbBr 3 EL intensity decreases with the increase of temperature due to the thermal quenching effect with the largest EL intensity was obtained at the temperature of 17.7 K. As shown in Figure h, when the V p value was in the range from 45 to 65 V, the EL intensity increased linearly with the increase of the value of V p , which indicates that the EL intensity might depend on the injection barrier for carriers at the interface of metal and semiconductor. The increase of the frequency from 5 Hz to 10 kHz leads to the enhancement of the EL intensity (Figure i), because with a higher frequency, more injection cycles of carriers would happen in a unit time interval, accompanied by a higher recombination efficiency.…”

Section: Optimizing Strategies For Ac‐driven El Devicesmentioning

confidence: 81%

Advances in Alternating Current Electroluminescent Devices

Wang

Lian

et al. 2019

Advanced Optical Materials

106

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radiatively at the active emissive layer driven by constant-voltage or direct current (DC). However, the DC-driven mode for OLEDs and QLEDs limits their practical applications. One reason is that the unidirectional DC flow may lead to unfavorable charges accumulation at high current density. Furthermore, the power losses are unavoidable as the DC-driven devices require power converters and rectifiers when connected to the 110/220 V at 50/60 Hz alternating current (AC) power sources. OLEDs are also particularly sensitive to dimensional variations accompanied by the generation of leakage currents at such imperfections, which is unfavorable for their application in flexible electronics. Consequently, AC-driven EL devices have attracted attention as promising alternatives to DC-driven EL devices for a variety of applications. [25][26][27][28][29][30][31][32][33] AC-driven EL devices are primarily composed of electrodes, an emissive layer and a single-or multilayer of insulating dielectric without the critical requirement for energy band matching, which facilitates their application in large-scale displays and flexible devices. [34] The device structure of AC-driven EL devices can be mainly divided into three kinds: i) AC-driven thin film electroluminescent (AC-TFEL) devices; ii) AC-driven lightemitting devices (AC-LEDs), and iii) AC-driven light-emitting field effect diodes (AC-LEFETs). Under the AC electric field, light generation is based on either the hot-electron impact excitation mechanism or the exciton recombination mechanism, depending on the device configuration. Despite the different operation principles, AC-driven EL devices have shown specific Alternating current (AC)-driven electroluminescent (EL) devices have recently attracted attention as potential alternatives to direct current (DC)-driven organic light-emitting diodes (OLEDs), as they have the great advantage of easy integration into the AC power system of 110/220 V at 50/60 Hz without complicated back-end electronics. However, the high driving voltage and low power efficiency inherent to AC-driven EL devices limit their widespread application. While researchers have made some remarkable progress in this field, the underlying causes during the development process remain to be explored. The strategies for improving the performance of AC-driven EL devices with different configurations, such as the conventional sandwiched structure and multilayer-based light-emitting devices, are summarized in this review. For example, it is crucial to enhance the effective electric field around the emitters for AC-driven thin film electroluminescent (AC-TFEL) devices, while the unbalanced generation/injection of charge carriers is the main limiting factor for the performance of AC-driven light-emitting devices (AC-LEDs). The recent advances in AC-driven EL devices, with some new configurations or new-type emitting materials, are presented by category. The challenges and opportunities for the further development of AC-driven EL devices are also discussed.

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“…The framework of IHPQDs no matter in the cubic structure or in the orthorhombic structure formed after partial distortion can make the charge carriers move in the limited 3D grid, thus leading to the relatively high carrier mobility . Meanwhile, IHPQDs are multicomponent halide salts with ionic bond characteristics, and their crystallization process is ion coprecipitation controlled by surface ligands, which makes it feasible to prepare the material at room temperature …”

Section: Introductionmentioning

confidence: 99%

Recent Progress and Development in Inorganic Halide Perovskite Quantum Dots for Photoelectrochemical Applications

Liang

Chen

Yao

et al. 2019

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130

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Inorganic halide perovskite quantum dots (IHPQDs) have recently emerged as a new class of optoelectronic nanomaterials that can outperform the existing hybrid organometallic halide perovskite (OHP), II–VI and III–V groups semiconductor nanocrystals, mainly due to their relatively high stability, excellent photophysical properties, and promising applications in wide‐ranging and diverse fields. In particular, IHPQDs have attracted much recent attention in the field of photoelectrochemistry, with the potential to harness their superb optical and charge transport properties as well as spectacular characteristics of quantum confinement effect for opening up new opportunities in next‐generation photoelectrochemical (PEC) systems. Over the past few years, numerous efforts have been made to design and prepare IHPQD‐based materials for a wide range of applications in photoelectrochemistry, ranging from photocatalytic degradation, photocatalytic CO2 reduction and PEC sensing, to photovoltaic devices. In this review, the recent advances in the development of IHPQD‐based materials are summarized from the standpoint of photoelectrochemistry. The prospects and further developments of IHPQDs in this exciting field are also discussed.

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Low temperature photoluminescence properties of CsPbBr₃ quantum dots embedded in glasses

Cited by 115 publications

References 54 publications

Transient Spectroscopy of Glass-Embedded Perovskite Quantum Dots: Novel Structures in an Old Wrapping

Transient Spectroscopy of Glass-Embedded Perovskite Quantum Dots: Novel Structures in an Old Wrapping

Advances in Alternating Current Electroluminescent Devices

Recent Progress and Development in Inorganic Halide Perovskite Quantum Dots for Photoelectrochemical Applications

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Low temperature photoluminescence properties of CsPbBr3 quantum dots embedded in glasses

Cited by 115 publications

References 54 publications

Transient Spectroscopy of Glass-Embedded Perovskite Quantum Dots: Novel Structures in an Old Wrapping

Transient Spectroscopy of Glass-Embedded Perovskite Quantum Dots: Novel Structures in an Old Wrapping

Advances in Alternating Current Electroluminescent Devices

Recent Progress and Development in Inorganic Halide Perovskite Quantum Dots for Photoelectrochemical Applications

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Low temperature photoluminescence properties of CsPbBr₃ quantum dots embedded in glasses