Low-temperature photoluminescence in SiGe single quantum wells

Kalem, Ş.; Curtis, T.; Boer, W.B. de; Stillman, G. E.

doi:10.1007/s003390050632

Cited by 6 publications

(3 citation statements)

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“…We can imagine that the upper SiGe layers in the MQWs are highly strained during the epitaxial growth and thus tend to form SiGe QDs to relieve the accumulated strain. Many studies have proposed the type II band alignment for both SiGe/Si MQW and MQD structures [34,35]. In a type II alignment, the indirect excitons are first localized at the hetero-interfaces and then recombine.…”

Section: Resultsmentioning

confidence: 99%

Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography

Chang

Cheng

et al. 2013

Nanoscale Res Lett

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This study fabricates the optically active uniform SiGe/Si multiple quantum well (MQW) nanorod and nanodot arrays from the Si0.4Ge0.6/Si MQWs using nanosphere lithography (NSL) combined with the reactive ion etching (RIE) process. Compared to the as-grown sample, we observe an obvious blueshift in photoluminescence (PL) spectra for the SiGe/Si MQW nanorod and nanodot arrays, which can be attributed to the transition of PL emission from the upper multiple quantum dot-like SiGe layers to the lower MQWs. A possible mechanism associated with carrier localization is also proposed for the PL enhancement. In addition, the SiGe/Si MQW nanorod arrays are shown to exhibit excellent antireflective characteristics over a wide wavelength range. These results indicate that SiGe/Si MQW nanorod arrays fabricated using NSL combined with RIE would be potentially useful as an optoelectronic material operating in the telecommunication range.

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Section: Resultsmentioning

confidence: 99%

Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography

Chang

Cheng

et al. 2013

Nanoscale Res Lett

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“…13) There are many studies on nanostructured Si, Ge, and SiGe alloys for next-generation photonics devices. [14][15][16][17][18][19][20][21] Studies reported that they have a high potential as lasers and photodetectors by incorporating quantum structures, despite being indirect-transition-type semiconductors in the studies of superlattices and multi-quantum wells. 18,19) Furthermore, it is very easy to change the optical conversion energy and the lattice constant by changing the size effect and the Ge composition.…”

Section: Introductionmentioning

confidence: 99%

“…[14][15][16][17][18][19][20][21] Studies reported that they have a high potential as lasers and photodetectors by incorporating quantum structures, despite being indirect-transition-type semiconductors in the studies of superlattices and multi-quantum wells. 18,19) Furthermore, it is very easy to change the optical conversion energy and the lattice constant by changing the size effect and the Ge composition. The degree of difficulty expected for fabrication of SiGe quantum dots on group-IV semiconductors is much easier than that of III-V semiconductors, GeSn, and SiSn.…”

Section: Introductionmentioning

confidence: 99%

Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy

Ito,

Yokogawa,

Wen

et al. 2024

Jpn. J. Appl. Phys.

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The strain state, optical properties, and band structure of the self-ordered multilayered silicon-germanium (SiGe) nanodots, which are staggered and dot-on-dot alignment and embedded by Si spacer, were evaluated by Raman spectroscopy and low-temperature Photoluminescence (PL). These results suggest that the compressive strain applied to the staggered nanodots is smaller than that of the dot-on-dot nanodots, which contributes to the shrinking of the bandgap of the staggered nanodots. Strong PL intensity was observed from the nanodots compared to the single crystalline bulk SiGe due to the carrier confinement and high crystal quality of the nanodots. The stack-controlled nanodots showed a redshift of the PL peaks compared to the bulk SiGe and the effect of strain induced in SiGe nanodots might not be enough to explain this phenomenon. The cause of the redshift was clarified by considering the hetero band structure of the nanodots and the tensile strained spacer.

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Optical and structural characterization of Si/SiGe heterostructures grown by RTCVD

et al. 2000

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Low-temperature photoluminescence in SiGe single quantum wells

Cited by 6 publications

References 0 publications

Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography

Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography

Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy

Optical and structural characterization of Si/SiGe heterostructures grown by RTCVD

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