Low-temperature photo-hydro-modification of II–VI and III–V semiconductors

Kamuz, A. M.; Oleksenko, P. F.; Ovsyannikov, E.Yu.; Sizov, Fiodor F.; D’yachenko, T. A.

doi:10.1016/0169-4332(96)00111-0

Cited by 7 publications

(7 citation statements)

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“…Earlier we have shown [3][4][5] that due to irreversible gigantic modification (IGM) it is possible to reduce the refractive index of semiconductor samples by the magnitude 0.50.8 (Fig. 2).…”

Section: Experimental Setup and Resultsmentioning

confidence: 97%

The way of photonic crystal formation in A3B5 and A2B6 semiconductors

Kamuz¹

2003

Semicond. Phys. Quantum Electron. Optoelectron.

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It is shown that under influence of irreversible gigantic modification in monocrystalline A3B5 and A2B6 semiconductors, local areas with the highly changed refractive index are created. It was shown that a complex refraction index of CdS, CdTe and GaAs semiconductor samples after their modification was essentially changed. For example, the complex refraction index of CdS samples was changed from the magnitude N = 2.75 + i2.8113 up to the magnitude N1 = 1.9 + i0.035. In addition, the real and imaginary parts of a complex refraction index of CdS decrease, accordingly, by 0.85 and 2.7763. And its absorption index was 80-fold decreased. The theoretical analysis of experimental results has shown that quantum dots and quantum wires are responsible for such huge changes of the refractive index, which arise in modified areas of samples. It was shown that boundaries between modified and non-modified areas of the sample stretch down to the depth not less than 11 µm. It was shown that photon crystals with one-dimensionality and two-dimensionality can be effectively formed for visible and ultraviolet ranges without using the complex lithographical technique.

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Section: Experimental Setup and Resultsmentioning

confidence: 97%

The way of photonic crystal formation in A3B5 and A2B6 semiconductors

Kamuz¹

2003

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Upon approaching the near-surface region (2), the charged interstitial defects (1) capture photogenerated electrons from the conduction band of the semiconductor and form neutral nanoclusters (5). The nanoclusters change the refractive index of the semiconductor material in its near-surface region (6) dramatically [1][2][3][4].…”

Section: Photomodification Of Znse Materialsmentioning

confidence: 99%

“…The process of photomodification of the refractive index of single crystal CdS and GaAs materials originally demonstrated in [1] has been used for holographic recording of volume phase diffraction gratings and signal processing waveguide components based on GaAs [2] for operation at telecom wavelengths of 1.3 and 1.5 μm, as well as for improving the performance of high-power laser diodes based on AlGaAs/GaAs material [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Holographic recording of infrared diffractive optics based on ZnSe material

Krivoshlykov¹

2015

Appl. Opt.

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Photomodification of the refractive index of polycrystalline ZnSe material commonly used for manufacturing of mid-wave and long-wave IR optics is demonstrated for the first time. The room-temperature process performed at relatively low light intensity produces the refractive index contrast and depth of modification, which are sufficient for optical recording of relief-free large-aperture volume phase holographic diffraction gratings, diffractive optical elements, and antireflection layers operating from the visible to long-wave IR wavelengths.

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“…We have shown [1,2,3] earlier that in process of modification of semiconductors at room temperature the dot defects are moved from volume of a sample into its subsurface area. Concentration of dot defects in volume of a sample goes down (a clearing of volume of a sample from the dot defects is occurred), and in its subsurface area arise quantum points and a wires, which strongly change its optical properties.…”

Section: Experimental Samples and Scheme Of Modificationmentioning

confidence: 99%

“…In this article offered is the new approach to improve (correct) key parameters of LDs, which allows to reach that for all key parameters (the threshold current, slope efficiency, and others) simultaneously. Our approach to improvement of parameters of LDs is based on the new physical phenomenon -irreversible gigantic modification of properties of semiconductors (IGM) [1,2,3].…”

Section: Introductionmentioning

confidence: 99%

Method of low-temperature rise of laser diode quality

Kamuz¹

2002

Semicond. Phys. Quantum Electron. Optoelectron.

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In 1987 the authors of this article discovered the effect of irreversible gigantic modification (IGM) of semiconductors. Basing on the IGM phenomenon the authors have developed technological method that enables to considerably improve performances of laser diodes after their manufacturing by increasing power, slope efficiency, and decreasing threshold current. The technology has been tested on the laser diodes of several US companies. We obtained the same results in improvement of all the diodes from these companies. Performances of the laser diodes with small slope efficiency and high threshold current were improved using this modification. Slope efficiency of laser diodes was increased by 2.3 or 3.7 times and the threshold current was decreased from 15 % up to 29 %. It is shown that modification depth of the semiconductor chip for these laser diodes exceeds 50 microns. Shown is that a beam divergence of laser diode can be decreased using the irreversible gigantic modification.

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Low-temperature photo-hydro-modification of II–VI and III–V semiconductors

Cited by 7 publications

References 0 publications

The way of photonic crystal formation in A3B5 and A2B6 semiconductors

The way of photonic crystal formation in A3B5 and A2B6 semiconductors

Holographic recording of infrared diffractive optics based on ZnSe material

Method of low-temperature rise of laser diode quality

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