Low Temperature Open-Air Plasma Deposition of SrTiO₃ Films for Solar Energy Harvesting: Impact of Precursors on the Properties and Performances

Abstract

Strontium titanate (STO) is a well-known oxide used in a wide variety of applications due to its excellent stability and optoelectronic properties. However, its integration in photoelectrocatalytic devices is limited by the lack of fast and scalable methods to produce robust films at a low temperature and atmospheric pressure. Herein, we report an atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) approach for the synthesis of STO crystalline films and their applications for photoelectrochemical solar energy conversion. The film crystallinity, which plays a determinant role in the photoelectrochemical performance, was linked to the selected strontium precursor and injection method. Through thermal stability studies of the precursors [Sr(dpm), Sr(ipo), Sr(acac), and Ti(ipo)] and analysis of the solution droplet size, it was demonstrated that the closer thermal decomposition behavior and superior miscibility of the Sr(dpm) and Ti(ipo) precursors led to more homogeneous and crystalline films with the highest photoelectrochemical performance (16.5 μA cm −2 at 1.23 V vs RHE under 100 mW cm −2 ), which can be further improved by a factor of 3.4 using thermal annealing at 500 °C. Evidence of the impact of a strontium precursor on the properties of STO films is provided through thermogravimetric analysis, X-ray diffraction, energy-dispersive system, UV−vis, X-ray photoelectron spectroscopy, HIM-SIMS, and photoelectrochemical analysis.

Enhanced Photocatalytic Hydrogen Evolution from Water Splitting on Ta2O5/SrZrO3 Heterostructures Decorated with CuxO/RuO2 Cocatalysts

“…It should be noted that the prepared electrodes show relatively high charge transfer resistance values due to the physical form of the catalyst, that is, the powder form. Low charge transfer resistance values are expected for denser layers, such as thin films …”

“…Low charge transfer resistance values are expected for denser layers, such as thin films. 63 3.4. Charge Transfer Mechanism.…”

High‐entropy (Ti0.2V0.2Nb0.2Mo0.2W0.2)Si2 with excellent high‐temperature wear resistance

“…The fracture toughness was calculated using the Anstis equation after the indentation test under 4.9 N 34 : $$$$\begin{equation}{K}_{_{IC}} = 0.016{\left( {\frac{E}{{{H}_v}}} \right)}^{1/2}\frac{P}{{{C}^{3/2}}}\end{equation}$$$$where P is the applied load (N), E is the elastic modulus (GPa), and C is the radial crack length (m). The lattice distortion (ε) was calculated by the following equation 35 : $$$$\begin{equation}\varepsilon = \frac{\beta }{{4tan\theta }}\end{equation}$$$$herein, β represents the full width at half maxima (FWHM) of the (100) plane of the HE‐MSi 2 , while θ pertains to the Bragg angle of the diffraction peak position of the (100) plane. Additionally, the structural and mechanical characteristics of high‐entropy ceramics can be significantly predicted by the valence electron concentration (VEC), which is defined as 36–38 : $$$$\begin{equation}VEC = \mathop \sum \limits_{i = 1}^n {c}_i{\left( {VEC} \right)}_i\end{equation}$$$$where (VEC) i is VEC for the individual element.…”

“…where P is the applied load (N), E is the elastic modulus (GPa), and C is the radial crack length (m). The lattice distortion (𝜀) was calculated by the following equation 35 :…”

Antimony Sulfoiodide‐Based Energy Harvesting and Self‐Powered Temperature Detection

“…Piezoelectric-semiconducting materials have attracted researchers due to the insulating characteristics of various materials such as strontium titanate, barium titanate, potassium sodium niobate, lead zirconate titanate, polyvinyl fluoride, and quartz. [1][2][3][4][5][6] In recent years, many works have focused on ZnO nanostructure-based energy harvesters as these materials have dual piezoelectric and semiconducting behavior, making their usage in photodetectors and piezotronic devices. [7][8][9] The wurtzite family-based materials such as zinc sulfide, gallium nitride, indium nitride, and cadmium sulfide have also been investigated to realize the dual behavior of piezoelectric effect and semiconducting nature.…”