Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity

Tereshchenko, O. E.; Shaibler, G. É.; Yaroshevich, A. S.; Shevelev, S.V.; Терехов, А. С.; Lundin, W. V.; Заварин, Е. Е.; Besyul’kin, A. I.

doi:10.1134/1.1809437

Cited by 43 publications

(23 citation statements)

References 22 publications

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“…Therefore, NEA GaN photocathode can be extensively applied in lithographic manufacture, rocket tracking, atmospheric monitoring, fire alarm technology, and other fields. [9][10][11][12][13][14][15][16][17] The QE equation of reflection-mode NEA GaN photocathode can be solved from the one-dimensional diffusion equations, 18-20 as follows:…”

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confidence: 99%

Influence of the p-type doping concentration on reflection-mode GaN photocathode

Wang

Chang

Ren

et al. 2011

Applied Physics Letters

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Four different p-type doping GaN photocathodes are activated by Cs/O, and the quantum efficiency (QE) curves are obtained. According to the QE equation, the curves are fitted. Both the QE curves and the fitting results show that the optimal p-type doping concentration is at 1017 cm−3. The electron diffusion length and surface-electron escape probability can be balanced well at 1017 cm−3. To a certain degree, thick emission layer is conducive to improving the QE, which is more obvious with the long wavelength.

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confidence: 99%

Influence of the p-type doping concentration on reflection-mode GaN photocathode

Wang

Chang

Ren

et al. 2011

Applied Physics Letters

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“…Indeed, the LO phonon emission time is 9 fs in GaN [19] which and is much shorter than the ∼1 ps transit time for electrons with thermal velocity of a few 10 5 m/s. Photoemission excited by the LED light, below the GaN bandgap [20], reabsorbed near the surface (process IV in Fig.11a) either due to impurity band transitions or to Franz-Keldysh transitions, could also generate low energy electron emission.…”

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confidence: 99%

“…The sample was first treated in an HCl-isopropanol solution [20] and then introduced in a UHV setup designed for low energy electron spectroscopy of electron emission from semiconductors [16]. After annealing at 260…”

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Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

et al. 2013

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We report on the unambiguous detection of Auger electrons by electron emission spectroscopy from a cesiated InGaN/GaN light emitting diode (LED) under electrical injection. Electron emission spectra were measured as a function of the current injected in the device. The appearance of high energy electron peaks simultaneously with an observed drop in electroluminescence efficiency shows that hot carriers are being generated in the active region (InGaN quantum wells) by an Auger process. A linear correlation was measured between the high energy emitted electron current and the "droop current" -the missing component of the injected current for light emission. We conclude that the droop phenomenon in GaN LED originates from the excitation of Auger processes.

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“…For the anode, it is also possible to use the wide gap GaN-based semiconductors 23 (Fig. 5(c) or, so called, “true” NEA materials (Fig.…”

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confidence: 99%

Solar energy converters based on multi-junction photoemission solar cells

Tereshchenko

Golyashov

Родионов

et al. 2017

Sci Rep

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Multi-junction solar cells with multiple p–n junctions made of different semiconductor materials have multiple bandgaps that allow reducing the relaxation energy loss and substantially increase the power-conversion efficiency. The choice of materials for each sub-cell is very limited due to the difficulties in extracting the current between the layers caused by the requirements for lattice- and current-matching. We propose a new vacuum multi-junction solar cell with multiple p-n junctions separated by vacuum gaps that allow using different semiconductor materials as cathode and anode, both activated to the state of effective negative electron affinity (NEA). In this work, the compact proximity focused vacuum tube with the GaAs(Cs,O) photocathode and AlGaAs/GaAs-(Cs,O) anode with GaAs quantum wells (QWs) is used as a prototype of a vacuum single-junction solar cell. The photodiode with the p-AlGaAs/GaAs anode showed the spectral power-conversion efficiency of about 1% at V bias = 0 in transmission and reflection modes, while, at V bias = 0.5 V, the efficiency increased up to 10%. In terms of energy conservation, we found the condition at which the energy cathode-to-anode transition was close to 1. Considering only the energy conservation part, the NEA-cell power-conversion efficiency can rich a quantum yield value which is measured up to more than 50%.

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Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity

Cited by 43 publications

References 22 publications

Influence of the p-type doping concentration on reflection-mode GaN photocathode

Influence of the p-type doping concentration on reflection-mode GaN photocathode

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

Solar energy converters based on multi-junction photoemission solar cells

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