Low-temperature liquid-phase epitaxy growth from Ga–As–Bi solution

Milanova, M.; Terziyska, P.

doi:10.1016/j.tsf.2005.10.049

Cited by 7 publications

(3 citation statements)

References 16 publications

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“…Our observations of undoped AlGaAs layers grown from Ga melts at T = 900 °C revealed p-type conductivity with p = (3–6)∙10 16 cm −3 . Like GaAs 14 – 17 , 41 , bismuth seems to be the key to solving the problem of carbon in AlGaAs.…”

Section: Resultsmentioning

confidence: 99%

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Khvostikova,

Vlasov,

Ber

et al. 2024

Sci Rep

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Thick smoothly graded AlxGa1−xAs layers (50–100 µm) are used in light-emitting diode structures and also for creation of high-power photovoltaic converters with side-input of laser radiation. To achieve the required thickness of the AlxGa1−xAs layer the high temperature LPE growth technique is required. However high epitaxial temperature increases the unintentional doping level. Epitaxy from mixed Ga–Bi melts was investigated as a way to solve this problem. It was found that for growing relatively thick AlxGa1−xAs layers, it is expedient to use Ga–Bi melts with 20 at% or less bismuth content. SIMS and Hall characterization of AlxGa1−xAs layers revealed that the growth of AlxGa1−xAs from mixed Ga-Bi melts reduces the background doping level (including carbon) and influences the native defect formation keeping the n-type conductivity. This effect is explained by the changes of the group III and V elements concentrations in the melt as well as Bi incorporation in the lattice.

show abstract

Section: Resultsmentioning

confidence: 99%

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Khvostikova,

Vlasov,

Ber

et al. 2024

Sci Rep

View full text Add to dashboard Cite

show abstract

“…Our observations of undoped AlGaAs layers grown from Ga melts at T = 900 o C revealed p-type conductivity with p=(3-6)•10 16 cm − 3 . Like GaAs [10][11][12][13]30], bismuth seems to be the key to solving the problem of carbon in AlGaAs.…”

Section: Resultsmentioning

confidence: 99%

Properties of Al x Ga 1-x As grown from a mixed Ga-Bi melt

Khvostikova

Vlasov

Ber

et al. 2023

Preprint

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Thick smoothly graded AlxGa1−xAs layers (50–100 µm) are used in light-emitting diode structures and also for creation of high-power photovoltaic converters with side-input of laser radiation. To achieve the required thickness of the AlxGa1−xAs layer the high temperature LPE growth technique is required. However high epitaxial temperature increases the unintentional doping level. Epitaxy from mixed Ga-Bi melts was investigated as a way to solve this problem. It was found that for growing relatively thick AlxGa1−xAs layers, it is expedient to use Ga-Bi melts with 20 at.% or less bismuth content. SIMS and Hall characterization of AlxGa1−xAs layers revealed that the growth of AlxGa1−xAs from mixed Ga-Bi melts reduces the background doping level (including carbon) and influences the native defect formation keeping the n-type conductivity. This effect is explained by the changes of the group III and V elements concentrations in the melt as well as Bi incorporation in the lattice.

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“…Recently, the GaAs 1− Bi alloy has already been fabricated successfully by MOVPE [2], MBE [3][4][5], and LPE [6,7]. Theoretically, the Bi-doped GaAs has been focused on the influence of doping with Bi on electronic properties [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Electronic Structure and Optical Properties ofGaAs1-xBi
You
¹
,
Zhou
²

2014
Advances in Condensed Matter Physics
3
0
2
0
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A first-principles study has been performed to investigate the structural and electronic properties of theGaAs1-xBixsystem. The simulations are based upon the generalized gradient approximation (GGA) within the framework of density functional theory (DFT). Calculations are performed to different Bi concentrations. The lattice constant ofGaAs1-xBixincreases with Bi concentration while the alloy remains in the zinc-blende structure. The band gap ofGaAs1-xBixclearly shrinks with the Bi concentration. The optical transition of Bi dopant in GaAs exhibits a red shift. Besides, other important optical constants, such as the dielectric function, reflectivity, refractive index, and loss function also change significantly.

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Low-temperature liquid-phase epitaxy growth from Ga–As–Bi solution

Cited by 7 publications

References 16 publications

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Properties of Al x Ga 1-x As grown from a mixed Ga-Bi melt

Electronic Structure and Optical Properties ofGaAs1-xBi
You
¹
,
Zhou
²

2014
Advances in Condensed Matter Physics
3
0
2
0
View full text Add to dashboard Cite

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Low-temperature liquid-phase epitaxy growth from Ga–As–Bi solution

Cited by 7 publications

References 16 publications

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Properties of Al x Ga 1-x As grown from a mixed Ga-Bi melt

Electronic Structure and Optical Properties ofGaAs1-xBiYou1, Zhou2 2014Advances in Condensed Matter Physics3020View full textAdd to dashboardCite

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Electronic Structure and Optical Properties ofGaAs1-xBi
You
¹
,
Zhou
²

2014
Advances in Condensed Matter Physics
3
0
2
0
View full text Add to dashboard Cite