Low-temperature large-grain poly-Si direct deposition by microwave plasma enhanced chemical vapor deposition using SiH4/Xe

Abstract

Articles you may be interested inLow-temperature (180°C) formation of large-grained Ge (111) thin film on insulator using accelerated metalinduced crystallization Appl. Phys. Lett. A hybrid kinetic Monte Carlo method for simulating silicon films grown by plasma-enhanced chemical vapor deposition J. Chem. Phys. 139, 204706 (2013); 10.1063/1.4830425 Hybrid-phase growth in microcrystalline silicon thin films deposited by plasma enhanced chemical vapor deposition at low temperatures J. Appl. Phys. 97, 094910 (2005); 10.1063/1.1883720Direct low-temperature chemical vapor deposition of fully crystalline micro-and polycrystalline silicon thin films on SiO 2 using plasma immersion ion implantation Polycrystalline silicon is grown at a temperature of 300°C by microwave-excited plasma enhanced chemical vapor deposition using SiH 4 /Xe. The grain size measured by x-ray diffraction is about 25 nm. High-density (Ͼ10 12 cm Ϫ3 ) plasma having very low electron temperature ͑Ͻ1 eV͒ is excited by microwave irradiation using radial line slot antenna. We present the implementation of this system for the growth of poly-Si. Low-energy ͑3 eV͒, high-flux ion bombardment utilizing xenon ion on a growing film surface activates the film surface and successfully enhances surface reaction/migration of silicon, resulting in high quality film formation at low temperatures.

Optical Emission Imaging and Modeling Investigations of Microwave-Activated SiH4/H2 and SiH4/CH4/H2 Plasmas

“…This caveat is important since activated Si/H and Si/C/H gas mixtures have already attracted attention in the context of plasma-enhanced CVD of, respectively, amorphous silicon (a-Si) and amorphous silicon carbide (a-SiC) layers for solar cell applications. , Compared with diamond CVD, most such silicon-related growth involves much lower-temperature and -pressure plasmas − (with correspondingly higher electron temperatures). For completeness, we also note reports of a-Si growth using direct MW-activated SiH 4 /Xe plasmas, of a-SiC growth using indirect MW-activated Si/C/H plasmas at low (∼1 torr) pressures, of the codeposition of diamond and SiC in activated Si/C/H mixtures, − and prior experimental and computational studies of Si/H , and Si/C/H , kinetics at gas temperatures relevant to the present work. The experimental setup and procedures are first summarized.…”

“…39,40 Compared with diamond CVD, most such silicon-related growth involves much lower temperature and pressure plasmas [41][42][43][44] (with correspondingly higher electron temperatures 43 ). For completeness, we also note reports of a-Si growth using direct MW-activated SiH4/Xe plasmas, 45 of a-SiC growth using indirect MW-activated Si/C/H plasmas at low (~1 Torr) pressures, 46 of the codeposition of diamond and SiC in activated Si/C/H mixtures, [47][48][49] and prior experimental and computational studies of Si/H 50,51 and Si/C/H 52,53 kinetics at gas temperatures relevant to the present work. The experimental set-up and procedures are first summarized.…”

Simple Model to Inclusively Understand a Radiated Wave Field in Slot-Excited Microwave Plasmas

“…Lastly, we analyzed the mode spectra of device 3, which consists of a coaxial waveguide, a dielectric material, and the slot plate with many slots. 9,15,16) Figure 8(a) shows an illustration of device 3. The microwave propagates by the TEM mode in the coaxial waveguide and is radiated from the slot antenna to the plasma.…”

“…In addition, a few slots or many slots are arranged on the slot antenna. In the plasma production with the cylindrical form, there are devices that consist of the rectangular waveguide and a few slots on the E surface, 13,14) the coaxial waveguide and the planar type antenna with many slots, 9,15,16) and the cylindrical waveguide and the planar type antenna with many slots. 8,11) In particular, many types of slot antenna are used in the existing devices and several types of slot antenna have the complex slot geometry.…”

High-speed μc-Si films deposition and large-grain poly-Si films deposition by surface wave discharge

“…As far as we know, however, the deposition rate of μc-Si films high enough tosatisfy the requirement for solar cell fabrication (a few tens nm/s) has not been reported yet. On the other hand, there are many reports on plasma CVD of poly-Si films, for example, using SiF 4 as feedstock gas [6] and high-density plasma sources [7][8][9][10]. However, the grain size reported in these literatures is less than ∼ 100 nm, which is not large enough for TFT applications.…”