Low-temperature investigation of electronic excitations in wide-gap materials doped with RE3+ or Cr3+ ions

Lushchik, A.; Lushchik, Ch.; Kudryavtseva, Irina; Maaroos, A.; Savikhin, F.; Shablonin, E.; Vasil’chenko, E.

doi:10.1134/s0030400x11090165

Cited by 5 publications

(6 citation statements)

References 24 publications

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“…the transition energy in the crystal (E crys ) is about twice as small as compared with that in a free Bi 3+ ion. Taking into account the fact that the E free /E crys ratio increases with the increasing E free according to the approximate equation E free /E crys = 1 + k E free , experimentally found in [24] and confirmed to be valid for all the ns 2 -ion-doped alkali halide crystals, the positions of the B and C bands of the Bi 3+ center in LuAG:Bi can be estimated. One can assume that the ≈5.95 eV band arises from the 1 S 0 → 1 P 1 transitions.…”

Section: Discussionmentioning

confidence: 89%

Peculiarities of excited state structure and photoluminescence in Bi³⁺-doped Lu₃Al₅O₁₂single-crystalline films

Babin¹,

Gorbenko²,

Krasnikov³

et al. 2009

J. Phys.: Condens. Matter

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Single-crystalline films of Lu(3)Al(5)O(12):Bi, prepared by the liquid phase epitaxy method from the melt-solution based on Bi(2)O(3) flux, have been studied at 4.2-400 K by time-resolved luminescence spectroscopy methods. Their emission spectra consist of two types of bands with strongly different characteristics. The ultraviolet emission band consists of two components, arising from the electronic transitions which correspond to the [Formula: see text] and [Formula: see text] transitions in a free Bi(3+) ion. At low temperatures, mainly the lower-energy component of this emission is observed, having the decay time∼10(-3) s at T<100 K and arising from the metastable (3)P(0) level. At T>100 K, the higher-energy emission component appears, arising from the thermally populated emitting (3)P(1) level. The visible emission spectrum consists of two dominant strongly overlapped broad bands with large Stokes shifts. At 4.2 K, their decay times are ∼10(-5) s and decrease with increasing temperature. Both of the visible emission bands are assumed to have an exciton origin. The lower-energy band is ascribed to an exciton, localized near a single Bi(3+) ion. The higher-energy band shows a stronger intensity dependence on the Bi(3+) content and is assumed to arise from an exciton localized near a dimer Bi(3+) center. The origin and structure of the corresponding excited states is considered and the processes, taking place in the excited states, are discussed.

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Section: Discussionmentioning

confidence: 89%

Peculiarities of excited state structure and photoluminescence in Bi³⁺-doped Lu₃Al₅O₁₂single-crystalline films

Babin¹,

Gorbenko²,

Krasnikov³

et al. 2009

J. Phys.: Condens. Matter

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“…Using this procedure [1] 16] or synchrotron radiation of 4-35 eV at the SU-PERLUMI station of HASYLAB at DESY [for details see 17]. A fine structure of the emission spectrum of Tb 3+ centers was measured using a monochromator-spectrograph SpectraPro-308i equipped with a liquid nitrogen cooled CCD detector [2,3]. The spectrum contains two series of 4f 8 The present paper focuses on the excitation spectra for steady-state luminescence, phosphorescence, TSL and photo-stimulated luminescence (PSL) of Tb 3+ and Gd…”

Section: Methodsmentioning

confidence: 99%

“…The possibility to use CaSO 4 :Tb 3+ [1][2][3] and BaSO 4 :Pr 3+ [4] phosphors as efficient spectral transformers in flu- * presented at the 7th International Conference on Functional Materials and Nanotechnologies, April 5-8, 2011, Riga, Latvia. † E-mail: aleksandr.lushchik@ut.ee orescent tubes is considered also.…”

Section: Introductionmentioning

confidence: 99%

“…The functioning of these transformers is based on the phenomena of photon multiplication [5,6] or photon cutting [7]. In CaSO 4 where the concentration of RE 3+ can be up to 5-7%, there is a total absorption of the exciting VUV-radiation, which provides either the direct excitation of the 4f n → 4f n-1 5d 1 intracentre transitions or the excitation of oxyanions (SO [2][3][4] ) and the formation of separated electrons and holes, with the subsequent energy transfer from the matrix to luminescence impurity centers [see, e.g., 8]. …”

Section: Introductionmentioning

confidence: 99%

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Recombination luminescence of CaSO4:Tb3+ and CaSO4:Gd3+phosphors

et al. 2012

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Abstract:A comparative study of the excitation of luminescence by VUV radiation as well as of thermally and photostimulated luminescence has been carried out for CaSO 4 :Tb 3+ and CaSO 4 :Gd 3+ phosphors, where Na + or F -ions are used for charge compensation. The distinction in hole processes for the phosphors with Na + or F -compensators is determined by the differing thermal stability of the holes localized at/near Tb 3+ Na + and Gd 3+ Na + (up to 100-160 K) or at/near Tb 3+ F -V Ca and Gd 3+ F -V Ca centers involving also a cation vacancy (up to 400-550 K). Tunnel luminescence in the pairs of localized electrons and holes nearby Tb 3+ or Gd 3+ has been detected. The mechanisms of electron-hole, hole-electron and tunnel recombination luminescence as well as a subsequent released energy transfer to RE 3+ ions are considered. PACS

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“…In the present study, the peculiarities of complicated electron-hole processes in pure and doped anhydrite will be considered on the basis of a comparison of the experimental data obtained for CaSO 4 doped with Gd 3+ , Tb 3+ , Dy 3+ (see also our previous publications [5,6,8,9]), Tm 3+ rare-earth ions, and theoretical calculations of the electronic properties in a number of calcium oxides and halides [10] with a detailed consideration of CaSO 4 . Results from the literature on detailed investigations of many wide-gap materials doped with RE 2+ and RE 3+ ions have been taken into consideration as well (see [11][12][13] and references therein).…”

Section: Introductionmentioning

confidence: 99%

Electronic excitations and self-trapping of electrons and holes in CaSO₄

et al. 2014

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A first-principles study of the electronic properties of a CaSO4 anhydrite structural phase has been performed. A theoretical estimation for the fundamental band gap (p → s transitions) is Eg = 9.6 eV and a proper threshold for p → d transitions is Epd = 10.8 eV. These values agree with the data obtained for a set of CaSO4 doped with Gd3+, Dy3+, Tm3+ and Tb3+ ions using the methods of low-temperature highly sensitive luminescence and thermoactivation spectroscopy. The results are consistent with theoretical predictions of a possible low-temperature self-trapping of oxygen p-holes. The hopping diffusion of hole polarons starts above ∼40 K and is accompanied by a ∼50–60 K peak of thermally stimulated luminescence of RE3+ ions caused due to the recombination of hole polarons with the electrons localized at RE3+. There is no direct evidence of the self-trapping of heavy d-electrons, however, one can argue that their motion rather differs from that of conduction s-electrons.

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Low-temperature investigation of electronic excitations in wide-gap materials doped with RE3+ or Cr3+ ions

Cited by 5 publications

References 24 publications

Peculiarities of excited state structure and photoluminescence in Bi³⁺-doped Lu₃Al₅O₁₂single-crystalline films

Peculiarities of excited state structure and photoluminescence in Bi³⁺-doped Lu₃Al₅O₁₂single-crystalline films

Recombination luminescence of CaSO4:Tb3+ and CaSO4:Gd3+phosphors

Electronic excitations and self-trapping of electrons and holes in CaSO₄

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Low-temperature investigation of electronic excitations in wide-gap materials doped with RE3+ or Cr3+ ions

Cited by 5 publications

References 24 publications

Peculiarities of excited state structure and photoluminescence in Bi3+-doped Lu3Al5O12single-crystalline films

Peculiarities of excited state structure and photoluminescence in Bi3+-doped Lu3Al5O12single-crystalline films

Recombination luminescence of CaSO4:Tb3+ and CaSO4:Gd3+phosphors

Electronic excitations and self-trapping of electrons and holes in CaSO4

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Peculiarities of excited state structure and photoluminescence in Bi³⁺-doped Lu₃Al₅O₁₂single-crystalline films

Peculiarities of excited state structure and photoluminescence in Bi³⁺-doped Lu₃Al₅O₁₂single-crystalline films

Electronic excitations and self-trapping of electrons and holes in CaSO₄