Low-temperature interface structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">CaF</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mo>/</mml:mo><mml:mi mathvariant="normal">Si</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo><mml:mn /></mml:math>studied by combining x-ray standing waves with component-resolved photoemission

Klust, Andreas; Bierkandt, Markus; Wollschläger, J.; Müller, Bernhard; Schmidt, Thomas; Falta, J.

doi:10.1103/physrevb.65.193404

Cited by 19 publications

(12 citation statements)

References 24 publications

(33 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…28 On the other hand, our result matches well the interface distance of 251 pm determined by XSW for deposition of 1.7 TL CaF 2 at 370°C. 29 Therefore it seems that additional CaF 2 on top of the CaF interface layer increases the interface distance because of the attractive interaction between CaF interface layer and the CaF 2 layers of the film on top.…”

Section: Discussionmentioning

confidence: 99%

“…28 Klust et al showed by means of XSW that Ca also adsorbs on T 4 sites for low deposition temperatures. 29 The formation of a CaF interface layer due to dissociation of CaF 2 at the Si͑111͒ surface and subsequent desorption of SiF x complexes has also been verified by x-ray photoelectron spectroscopy. 30,31 Furthermore, investigations by grazing incidence x-ray diffraction ͑GIXRD͒ verified both T 4 and H 3 adsorption sites for ultrathin CaF films if they are treated by rapid thermal annealing at very high temperatures after deposition.…”

Section: Introductionmentioning

confidence: 97%

See 1 more Smart Citation

Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)

et al. 2010

Self Cite

View full text Add to dashboard Cite

The structure and morphology of ultrathin lattice matched CaF 2 films of very few monolayers thickness, which were deposited on Si͑111͒ substrates by molecular-beam epitaxy, have been studied in situ by synchrotron based grazing incidence x-ray diffraction. Even for the thinnest investigated film of three monolayers thickness, the in-plane structure of the CaF 2 film is determined by a lateral separation in two domains: a pseudomorphic phase assuming the lateral lattice constant of the Si͑111͒ substrate and a completely relaxed phase. Analysis of the crystal truncation rods verifies that both phases adopt the entire homogeneous CaF 2 film thickness. Therefore, we propose that atomic steps of the substrate bypass the nucleation barrier for the formation of ͑Shockley partial͒ dislocations so that the film starts to relax below the classical critical film thickness. While the relaxed phase assumes also the CaF 2 bulk lattice constant for the vertical direction, the vertical lattice constant of the pseudomorphic phase increases due to the compressive lateral strain at the interface. This vertical expansion of the pseudomorphic phase, however, is larger than expected from the elastic constants of the CaF 2 bulk. The fraction of the pseudomorphic CaF 2 phase decreases with increasing film thickness. The interface between the pseudomorphic CaF 2 phase and the Si͑111͒ substrate is characterized by Ca on T 4 sites, a smaller distance between the Si͑111͒ substrate and the CaF interface layer and an expanded layer distance between CaF interface layer and the completely stoichiometric CaF 2 film.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)

et al. 2010

Self Cite

View full text Add to dashboard Cite

show abstract

“…In order to produce the optical multilayer and filters, CaF 2 can be deposited as thin films using mainly physical vapor deposition (PVD) techniques such as, electron-beam evaporation (EBE) [6][7][8][9], thermal evaporation [10][11][12], r.f. magnetron sputtering [13], pulsed laser deposition (PLD) [14,15], and molecular beam epitaxial (MBE) [16].…”

Section: Introductionmentioning

confidence: 99%

The structural, optical and morphological properties of CaF2 thin films by using Thermionic Vacuum Arc (TVA)

Çetin¹,

Korkmaz²,

Elmas³

et al. 2013

Materials Letters

View full text Add to dashboard Cite

a b s t r a c tIn this study, calcium fluoride (CaF 2 ) thin films have been prepared by Thermionic Vacuum Arc (TVA) technique on glass substrates. In this technique CaF 2 thin films are produced by condensing the plasma of anode material generated in the TVA setup under high vacuum conditions on glass substrates. Crystal structures as well as optical and surface properties of CaF 2 antireflective (AR) coated thin films were investigated. X-ray diffraction (XRD) measurements showed that amorphous CaF 2 thin films were formed. Optical and surface properties of CaF 2 films have been studied based on optical transmittance, reflectance, refractive index and atomic force microscopy imaging (AFM). Our results also show that CaF 2 coated samples exhibit lower reflectance (R). From our optical studies, we have observed that CaF 2 thin films have high AR properties.

show abstract

“…Physical vapor deposition techniques have been primarily used for the preparation of CaF 2 thin films. Some of these are molecular beam epitaxy, electron beam evaporation (EBE), thermal evaporation, radio frequency magnetron sputtering, etc. Understanding the surface growth of thin films is of both theoretical and practical interest.…”

Section: Introductionmentioning

confidence: 99%

Multifractal analysis of sputtered CaF₂ thin films

Yadav

Pandey

Mittal

et al. 2013

Surface & Interface Analysis

View full text Add to dashboard Cite

The surface morphologies of CaF2 thin films prepared by electron beam evaporation technique were measured by atomic force microscopy. The films were bombarded by energetic ion beams of different fluences, which modified the surface morphology predominantly via the process of erosion. The dependence of the surface morphology on ion fluence was explored using multifractal analysis. It was found that the roughness of the film first decreased with ion fluence but increased at higher fluences. Copyright © 2013 John Wiley & Sons, Ltd.

show abstract

Low-temperature interface structure ofCaF2/Si(111)studied by combining x-ray standing waves with component-resolved photoemission

Cited by 19 publications

References 24 publications

Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)

Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)

The structural, optical and morphological properties of CaF2 thin films by using Thermionic Vacuum Arc (TVA)

Multifractal analysis of sputtered CaF₂ thin films

Contact Info

Product

Resources

About

Low-temperature interface structure ofCaF2/Si(111)studied by combining x-ray standing waves with component-resolved photoemission

Cited by 19 publications

References 24 publications

Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)

Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)

The structural, optical and morphological properties of CaF2 thin films by using Thermionic Vacuum Arc (TVA)

Multifractal analysis of sputtered CaF2 thin films

Contact Info

Product

Resources

About

Multifractal analysis of sputtered CaF₂ thin films