Low-temperature hydrothermal growth of oriented [0001] ZnO film

Li, Shuzhi; Zhou, Shengming; Liu, Hongxia; Yin, Hao; Xia, Changtai; Xu, Jing; Gu, Shulin; Zhang, Rong

doi:10.1016/j.matlet.2006.03.145

Cited by 30 publications

(18 citation statements)

References 12 publications

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“…Therefore, ZnO crystal grows fast along the direction in (0 0 0 1) face. In the present study, upon the hydrolysis-condensation reaction, the growth units of Zn(OH) 4 2À diffused onto the surface of the ZnO nanosheets to form clusters of Zn x+1 O y+1 (OH) z+2 (z+2yÀ2x)À by an oxolation reaction [38] and gradually formed a saturating concentration between the ZnO nanosheets and solution interface. Upon reaching a critical saturation point, the nuclei of ZnO crystals simultaneously occurred on the ZnO seed, and then the ZnO crystals began to precipitate and grow, resulting in a preferential orientation along ZnO (0 0 0 1) by direct homoepitaxial growth.…”

Section: Resultsmentioning

confidence: 74%

Semi-circular shaped ZnO nanowhiskers assemblies deposited using an aqueous solution

Masuda

Ohji

et al. 2008

Applied Surface Science

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Section: Resultsmentioning

confidence: 74%

Semi-circular shaped ZnO nanowhiskers assemblies deposited using an aqueous solution

Masuda

Ohji

et al. 2008

Applied Surface Science

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“…6 This material is a n-type semiconductor and has a direct band gap of 3.37 eV at room temperature. 7 Because of its interesting properties, many works were focused on the elaboration of ZnO films by several methods such as magnetron sputtering, 8 molecular beam epitaxy, 9 chemical vapor deposition, 10 pulsed laser deposition (PLD), 11 chemical bath deposition (CBD), 12 spray pyrolysis, 13 solgel, 14 electrochemical deposition, 2 hydrothermal growth 15 and thermal decomposition. 16 Another process to obtain ZnO films is the thermal oxidation of metallic Zn layers which takes advantage of its simplicity of the process.…”

Section: Introductionmentioning

confidence: 99%

Characterization of ZnO Thin Films Prepared by Thermal Oxidation of Zn

Bouanane

Kabir

Boulainine

et al. 2016

Journal of Elec Materi

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Zinc oxide thin films were prepared by thermal oxidation of zinc films at a temperature of 500°C for 2 h. The Zn films were deposited onto glass substrates by magnetron RF sputtering. The sputtering time varied from 2.5 min to 15 min. The physico-chemical characterization of the ZnO films was carried out depending on the Zn sputtering time. According to x-ray diffraction, ZnO films were polycrystalline and the Zn-ZnO phase transformation was direct. The mean transmittance of the ZnO films was around 80% and the band gap increased from 3.15 eV to 3.35 eV. Photoluminescence spectra show ultraviolet, visible, and infrared emission bands. The increase of the UV emission band was correlated with the improvement of the crystalline quality of the ZnO films. The concentration of native defects was found to decrease with increasing Zn sputtering time. The decrease of the electrical resistivity as a function of Zn sputtering time was linked to extrinsic hydrogen-related defects.

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“…Aligned ZnO nanorods with high density were uniformly grown because of the ZnO seeding layer, which is conducive to growth of aligned ZnO nanorod arrays. 19 Cui et al 20 also pointed out that ZnO seeds are indispensable for aligned growth of ZnO nanorods. The average diameter of the ZnO nanorods is 70 nm (Fig.…”

Section: Glass Glassmentioning

confidence: 99%

Bicolor Light-Emitting Diode Based on Zinc Oxide Nanorod Arrays and Poly(2-methoxy,5-octoxy)-1,4-phenylenevinylene

Song

Chen

et al. 2011

Journal of Elec Materi

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The current study reports a novel inorganic/organic light-emitting diode (LED), consisting of zinc oxide (ZnO) nanorod arrays and poly(2-methoxy, 5-octoxy)-1,4-phenylenevinylene (MOPPV). ZnO nanorod arrays passivated using polyacrylamide (PAM) with 70 nm diameter were successfully prepared by a simple polymer-assisted chemical method. Enhancement of the ZnO defect emission is caused by PAM passivation, as observed in photoluminescence spectra. Infrared absorption spectra reveal that PAM is chemically or physically adsorbed on the surfaces of ZnO nanorod arrays. The electroluminescence (EL) spectrum shows bluish light at 406 nm from ZnO transition emission, and light emission with center at 600 nm from exciton emission in MOPPV. The potential EL mechanism is electron transition to zinc vacancy in PAM/ZnO nanorod arrays, and exciton radiation luminescence in MOPPV film. This novel PAM/ZnO-MOPPV device may be helpful to promote development of multicolor LEDs.

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Low-temperature hydrothermal growth of oriented [0001] ZnO film

Cited by 30 publications

References 12 publications

Semi-circular shaped ZnO nanowhiskers assemblies deposited using an aqueous solution

Semi-circular shaped ZnO nanowhiskers assemblies deposited using an aqueous solution

Characterization of ZnO Thin Films Prepared by Thermal Oxidation of Zn

Bicolor Light-Emitting Diode Based on Zinc Oxide Nanorod Arrays and Poly(2-methoxy,5-octoxy)-1,4-phenylenevinylene

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