2015
DOI: 10.1109/jphotov.2015.2450993
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Low-Temperature High-Mobility Amorphous IZO for Silicon Heterojunction Solar Cells

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Cited by 119 publications
(119 citation statements)
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“…[23] For example, the optical band gap (E g ) of sputtered ITO, IZO and IO:H films are between 3.5 and 3.8 eV. [111] Transparent electrodes with low absorptance in the NIR-IR part of the spectrum (transparent electrodes with low FCA) are required for CIGS, SHJ and multi-junction devices, such as perovskite-onsilicon [109,112] and perovskite-on-CIGS [113] tandem solar cells, as these devices employ optical absorbers that are active in this range of the spectrum. These tandem approaches are new highefficiency photovoltaic technologies, with a potential to reach about 30% efficiency, [114,115] clearly underscoring the critical importance and urgency of designing transparent electrodes with exceptionally large broadband transparency.…”
Section: Progress Reportmentioning
confidence: 99%
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“…[23] For example, the optical band gap (E g ) of sputtered ITO, IZO and IO:H films are between 3.5 and 3.8 eV. [111] Transparent electrodes with low absorptance in the NIR-IR part of the spectrum (transparent electrodes with low FCA) are required for CIGS, SHJ and multi-junction devices, such as perovskite-onsilicon [109,112] and perovskite-on-CIGS [113] tandem solar cells, as these devices employ optical absorbers that are active in this range of the spectrum. These tandem approaches are new highefficiency photovoltaic technologies, with a potential to reach about 30% efficiency, [114,115] clearly underscoring the critical importance and urgency of designing transparent electrodes with exceptionally large broadband transparency.…”
Section: Progress Reportmentioning
confidence: 99%
“…Even with an amorphous structure (different from polycrystalline IO:H and ICO:H), IZO can have electron mobilities up to 60 cm 2 V −1 s −1 for free carrier densities between 1-3 × 10 20 cm −3 . [111,125,126] An attractive feature of these TCOs is that they already have excellent optoelectronic properties in their as-deposited state; these properties are not much affected by post-deposition annealing and offer opportunities for temperature-sensitive applications. A possible drawback is their relatively high absorption in the UV-vis range due to optical band gap narrowing.…”
Section: Progress Reportmentioning
confidence: 99%
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