Low temperature growth of polycrystalline InN films on non-crystalline substrates by plasma-enhanced atomic layer deposition

Peng, Hong; Feng, Xingcan; Gong, Jinhui; Wang, Wei; Liu, Hu; Quan, Zhi; Pan, Shangke; Wang, Li

doi:10.1016/j.apsusc.2018.08.093

Cited by 16 publications

(10 citation statements)

References 38 publications

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“…Given the low reactivity of ammonia at low temperatures, a nitrogen containing plasma has been used in previous studies for ALD of both polycrystalline and epitaxial InN on different planar and 3D substrate topographies. [7][8][9][10][11] The literature on InN ALD uses mainly TMI as In precursor, with InCp as a notable exception. 12 It has been shown that Ar-N2 plasma and TMI, results in a poorly functioning surface chemistry for removal of methyl groups from the surface, and requires very long plasma exposures, up to 120 s. 9,11 Nepal et al reported a correlation between changes in the gas-phase chemistry of the plasma source and InN film; higher nitrogen atom concentration within the plasma source is correlated with smoother InN films.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of InN using trimethylindium and ammonia plasma

Deminskyi

Rouf

Ivanov

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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InN is a low band gap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, we hypothesize that a time-resolved, surface-controlled CVD route could offer a way forward for InN thin film deposition. In this work, we report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si(100). We found a narrow ALD window of 240-260 °C with a deposition rate of 0.36 Å/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray diffraction measurements further confirmed the polycrystalline nature of InN thin films. X-ray photoelectron spectroscopy measurements show nearly stoichiometric InN with low carbon level (< 1 atomic %) and oxygen level (< 5 atomic %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH3 plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge.

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Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of InN using trimethylindium and ammonia plasma

Deminskyi

Rouf

Ivanov

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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show abstract

“…In this regard, plasma-enhanced atomic layer deposition (PE-ALD) becomes an attractive choice as it offers surface-chemistry driven atomic-scale precision material growth at low substrate temperatures. 17,[25][26][27][28][29][30][31][32] The main advantages of ALD compared to other thin lm growth techniques are sub-nanometer precision thickness control, low-temperature growth, ultimate conformality, and large-area uniformity. 33,34 To date, there have been multiple efforts towards low-temperature InN growth via PE-ALD.…”

Section: Introductionmentioning

confidence: 99%

“…33,34 To date, there have been multiple efforts towards low-temperature InN growth via PE-ALD. 17,[30][31][32][35][36][37][38][39][40][41] Initial epitaxial growth of InN at sub-300 C was achieved by plasma-enhanced atomic layer epitaxy (PE-ALE) where the lms exhibited substrate-dependent varying crystallographic orientations. 17,36 In a relatively recent study, PE-ALD of monocrystalline InN lms has also been reported at 250 C using N 2 -plasma on lower-lattice-mismatched ZnO/Al 2 O 3 substrates, where the lms were fully relaxed with no voids or interlayers at the interfaces.…”

Section: Introductionmentioning

confidence: 99%

Elucidating the role of nitrogen plasma composition in the low-temperature self-limiting growth of indium nitride thin films

et al. 2020

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“…Given the low reactivity of ammonia at low temperatures, a nitrogen containing plasma has been used in previous studies for ALD of both polycrystalline and epitaxial InN on different planar and 3D substrate topographies. [6][7][8][9][10] All previous literature on InN ALD uses TMI as In precursor. It has been shown that Ar-N 2 plasma and TMI, results in a poorly functioning surface chemistry for removal of methyl groups from the surface, and requires very long plasma exposures, up to 120 s. 8 higher nitrogen atom concentration within the plasma source is correlated with smoother InN films.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Inn Using Trimethylindium and Ammonia Plasma

Deminskyi¹,

Rouf²,

Ivanov³

et al. 2018

Preprint

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<div>InN is a low band gap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, we hypothesize that a time-resolved, surface-controlled CVD route could offer a way</div><div>forward for InN thin film deposition. In this work, we report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si (100). We found a narrow ALD window of 240–260 °C with a deposition rate of 0.36 Å/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray photoelectron spectroscopy measurements shows nearly stoichiometric InN with low carbon level (< 1 atomic %) and oxygen level (< 5 atomic %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH<sub>3</sub> plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge.</div>

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Low temperature growth of polycrystalline InN films on non-crystalline substrates by plasma-enhanced atomic layer deposition

Cited by 16 publications

References 38 publications

Atomic layer deposition of InN using trimethylindium and ammonia plasma

Atomic layer deposition of InN using trimethylindium and ammonia plasma

Elucidating the role of nitrogen plasma composition in the low-temperature self-limiting growth of indium nitride thin films

Atomic Layer Deposition of Inn Using Trimethylindium and Ammonia Plasma

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