Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(<i>N</i>-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

Kim, Hyo Yeon; Jung, Eun‐Hee; Mun, Geumbi; Agbenyeke, Raphael Edem; Park, Bo Keun; Park, Jin‐Seong; Son, Seung Uk; Jeon, Dong Ju; Park, Sang Hee Ko; Chung, Taek; Han, Jeong Hwan

doi:10.1021/acsami.6b07332

Cited by 60 publications

(38 citation statements)

References 29 publications

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“…Red markers indicate H 2 O as the sole oxygen source; gray markers indicate another oxygen source such as O 3 , H 2 O 2 , or O 2 . The indium sources are 1 and 2 (this work), TMIn (A), Et 2 In[N(SiMe 3 ) 2 ] (B), DADI (C), In[C(N i Pr 2 )(N i Pr) 2 ] 3 (D), InCl 3 (E), InCp (F, G), TEIn (I), Me 2 In(EDPA) (J), and In(tmhd) 3 (K).…”

Section: Figurementioning

confidence: 99%

Obtaining a Low and Wide Atomic Layer Deposition Window (150–275 °C) for In₂O₃ Films Using an In^III Amidinate and H₂O

Kim

Jayaraman

Chua

et al. 2018

Chemistry A European J

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Indium oxide is a major component of many technologically important thin films, most notably the transparent conductor indium tin oxide (ITO). Despite being pyrophoric, homoleptic indium(III) alkyls do not allow atomic layer deposition (ALD) of In O using water as a co-precursor at substrate temperatures below 200 °C. Several alternative indium sources have been developed, but none allows ALD at lower temperatures except in the presence of oxidants such as O or O , which are not compatible with some substrates or alloying processes. We have synthesized a new indium precursor, tris(N,N'-diisopropylformamidinato)indium(III), compound 1, which allows ALD of pure, carbon-free In O films using H O as the only co-reactant, on substrates in the temperature range 150-275 °C. In contrast, replacing just the H of the anionic iPrNC(H)NiPr ligand with a methyl group (affording the known tris(N,N'-diisopropylacetamidinato)indium(III), compound 2) results in a considerably higher and narrower ALD window in the analogous reaction with H O (225-300 °C). Kinetic studies demonstrate that a higher rate of surface reactions in both parts of the ALD cycle gives rise to this difference in the ALD windows.

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Section: Figurementioning

confidence: 99%

Obtaining a Low and Wide Atomic Layer Deposition Window (150–275 °C) for In₂O₃ Films Using an In^III Amidinate and H₂O

Kim

Jayaraman

Chua

et al. 2018

Chemistry A European J

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“…Microstructural analyses, such as field emission scanning electron microscope (S‐4700, Hitachi), and X‐ray diffraction microscopy (D/MAX 2200V, Rigaku) were carried out. Carrier mobility, carrier concentration, and electrical conductivity were estimated via Hall measurement (HMS‐5000, Ecopia) . Seebeck coefficient was measured by custom built system .…”

mentioning

confidence: 99%

Improvement of thermoelectric properties of Bi₂Te₃ and Sb₂Te₃ films grown on graphene substrate

Lee

Kim

Choi

et al. 2017

Physica Rapid Research Ltrs

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Phone: þ82 42 860 7677, Fax: þ82 42 861 4151A study of substrate effect on the thermoelectric (TE) properties of Bi 2 Te 3 (BT) and Sb 2 Te 3 (ST) thin films grown by plasma-enhanced chemical vapor deposition (PECVD) was performed. Graphene substrates which have small lattice mismatch with BT and ST were used for the preparation of highly oriented BT and ST thin films. Carrier mobility of the epitaxial BT and ST films grown on the graphene substrates increased as the deposition temperature increased, which was not observed in that of SiO 2 /Si substrates. Seebeck coefficients of the as-grown BT and ST films were observed to be maintained even though carrier concentration increased in the epitaxial BT and ST films on graphene substrate. Although Seebeck coefficient was not improved, power factor of the as-grown BT and ST films was considerably enhanced due to the increase of electrical conductivity resulting from the high carrier mobility and moderate carrier concentration in the epitaxial BT and ST films.Thermoelectric (TE) energy generators have promising applications in the operation of micro-scale electric devices and systems. Many previous researches have been focused on the enhancement of the efficiency of TE materials [1][2][3][4][5][6][7][8]. The efficiency of thermoelectric materials depends on the dimensionless thermoelectric figure of merit ZT ¼ a 2 sT/k where a, T, s, and k are the Seebeck coefficient, absolute temperature, electrical conductivity, and thermal conductivity, respectively. The recent reports explained that the enhancement of ZT was mainly due to the reduction of k by nanostructure-engineering which dramatically increases phonon boundary scattering at interfaces [1,2,[5][6][7]. However, the enhancement of ZT by increasing the thermoelectric power factor (a 2 s) has been reported [9][10][11][12].Various deposition methods have been reported for preparation of highly oriented Bi 2 Te 3 (BT) and Sb 2 Te 3 (ST) thin films, such as molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), and pulsed laser deposition (PLD) [13][14][15]. MOCVD has attracted the most amount of attention due to its low cost and high controllability for thin film growth, which make it most suitable for large-scale production. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD) has an advantage of low deposition temperature with a relatively high deposition rate in comparison with conventional MOCVD process.It is well known that the electrical conductivity of BT and ST along c-plane is much higher than that of c-axis because of the layered structural characteristics of single crystalline BT and ST [16,17]. Furthermore, epitaxial BT and ST thin films are also expected to have higher power factors than that of polycrystalline. However, latticematched substrate for BT and ST has rarely been reported until now except expensive yet small-sized crystalline

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“…Such interesting property of complex 3 of being liquid at room temperature was further studied as the In source for PEALD In 2 O 3 growth process and showed excellent properties for ALD in our group's recent report …”

Section: Resultsmentioning

confidence: 99%

“…Furthermore, we observed that as‐deposited In 2 O 3 films were able to form smooth surface morphology with negligible residual impurity, and made bottom‐gate TFTs to test prepared In 2 O 3 film as a channel material. Surprisingly, it showed potential use as TFTs by showing great switching performance with high field electric mobilities of 28–30 and 16–19 cm 2 /v⋅s . Herein, we report the synthetic route for two solid‐state, and one liquid‐state In‐precursors in details with full characterizations, together with valid volatility test and structural analysis of those compounds.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Indium Complexes for Thin Film Transistor Applications Bearing N‐Alkoxy Carboxamide Ligands

et al. 2018

Self Cite

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By reacting equimolar amount of trimethylindium with various N-alkoxy carboxamidate type-ligands in a single step reaction, new series of indium complexes (1-3), [In(CH 3 ) 2 (L)] 2 (L 1 H = Nmethoxypropionamide (mpaH), L 2 H = N-ethoxy-2-methyl propanamide (empaH), L 3 H = N-ethoxy-2,2-dimethyl propanamide (edpaH)), were successfully synthesized. All complexes were fully characterized by FTIR and NMR spectroscopy along with elemental and thermogravimetric (TG) analyses. While complex 1 and 2 were solid in room temperature, complex 3 which relatively bulkier ligand L 3 H was introduced was in liquid state. Among them, complex 1 was structurally characterized by single crystal X-ray diffraction. Complex 1 existed in a tetragonal I4(1)/a space group that consist of a pair enantiomers. A sharp weight loss between 130 8C and 230 8C in a single step in TGA for all complexes showed outstanding volatility properties with lowest residual mass of 10% which are a crucial factor in thin film industry.[a] Dr.

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Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

Cited by 60 publications

References 29 publications

Obtaining a Low and Wide Atomic Layer Deposition Window (150–275 °C) for In₂O₃ Films Using an In^III Amidinate and H₂O

Obtaining a Low and Wide Atomic Layer Deposition Window (150–275 °C) for In₂O₃ Films Using an In^III Amidinate and H₂O

Improvement of thermoelectric properties of Bi₂Te₃ and Sb₂Te₃ films grown on graphene substrate

Synthesis of Indium Complexes for Thin Film Transistor Applications Bearing N‐Alkoxy Carboxamide Ligands

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Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

Cited by 60 publications

References 29 publications

Obtaining a Low and Wide Atomic Layer Deposition Window (150–275 °C) for In2O3 Films Using an InIII Amidinate and H2O

Obtaining a Low and Wide Atomic Layer Deposition Window (150–275 °C) for In2O3 Films Using an InIII Amidinate and H2O

Improvement of thermoelectric properties of Bi2Te3 and Sb2Te3 films grown on graphene substrate

Synthesis of Indium Complexes for Thin Film Transistor Applications Bearing N‐Alkoxy Carboxamide Ligands

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Obtaining a Low and Wide Atomic Layer Deposition Window (150–275 °C) for In₂O₃ Films Using an In^III Amidinate and H₂O

Obtaining a Low and Wide Atomic Layer Deposition Window (150–275 °C) for In₂O₃ Films Using an In^III Amidinate and H₂O

Improvement of thermoelectric properties of Bi₂Te₃ and Sb₂Te₃ films grown on graphene substrate