Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD

III-nitride core–shell nanorod array on quartz substrates

“…Another satellite peak (asterisk) found at 44.2° is attributed to reflection from the aluminium sample holder in the XRD system. Other crystal phases such as zinc blend structures, which often occur on GaN/amorphous substrates253233, were dramatically suppressed, indicating an ensemble of wurtzite GaN NRs. To further study the growth evolution of GaN NRs, we cut the specimen along the direction perpendicular to the substrate and performed transmission electron microscopy (TEM).…”

Measurements of nitrogen atom density in a microwave‐excited plasma jet produced under moderate pressures

“…E-mail: jaeho.kim@aist.go.jp *Research Institute for Advanced Electronics and Photonics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan **GaN Advanced Device Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya, Aichi, Japan ***Center for Low-temperature Plasma Sciences, Nagoya University, Nagoya, Aichi, Japan ****Faculty of Science and Technology, Meijo University, Nagoya, Aichi, Japan *****Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8564, Japan and a low-temperature growth of silicon nitride films [8]. In addition, nitrogen plasmas have been studied to develop the growth processes of GaN [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28], which is a III-nitride semiconductor material with numerous applications in opto-electronic devices such as light emitting diodes, laser diode, and electronic devices based on high-electron-mobility transistors [25,29]. Over the past few decades, plasma-assisted methods such as plasma-assisted metalorganic chemical vapor deposition [9,[12][13][14]16,18,21,23,25], plasma-assisted molecular beam epitaxy [10,11,15,[19][20][21]…”

“…In addition, nitrogen plasmas have been studied to develop the growth processes of GaN [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28], which is a III-nitride semiconductor material with numerous applications in opto-electronic devices such as light emitting diodes, laser diode, and electronic devices based on high-electron-mobility transistors [25,29]. Over the past few decades, plasma-assisted methods such as plasma-assisted metalorganic chemical vapor deposition [9,[12][13][14]16,18,21,23,25], plasma-assisted molecular beam epitaxy [10,11,15,[19][20][21][22]26,28], and plasma-assisted atomic layer deposition [24,27] have been studied in regard to the growth of GaN using plasma-activated nitrogen species.…”

“…In these processes, various plasma sources excited by electrical power supplies with high frequencies in the radio frequency (RF) band of 13.56 MHz [2,5,7,8,[14][15][16]20,22,24,26,27], very high frequency (VHF) band of 60 MHz [25], and microwave band of 2.45 GHz [9][10][11][12][13]17,18,21,23] have been employed to produce active nitrogen radicals at low pressures in the range from 0.4 to 267 Pa. Those sources can produce high radical densities because of the efficient electric power coupling with plasma directly through waves in the plasma [25]. However, an advanced nitrogen plasma source capable of producing higher radical densities, reducing ion bombardment damage on substrates, and enlarging processing area while maintaining uniformity is still strongly required for industrial applications.…”

Growth and optical properties of gallium nitride film on glass substrates

“…Many methods have already been proposed. For example, GaN layers were grown using gas-source molecular beam epitaxy (MBE) [3,4], electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) [5][6][7] at low temperatures. By means of local epitaxy, three-dimensional GaN-based LEDs were also fabricated on the fused silica glass substrates [8].…”