Low temperature growth and properties of Cu–In–Te based thin films for narrow bandgap solar cells

Mise, Takahiro; Nakada, Tokio

doi:10.1016/j.tsf.2010.04.065

Cited by 48 publications

(38 citation statements)

References 20 publications

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“…Since the deposited films were not intentionally doped, the variation in the conductivity mechanism was possibly due to the intrinsic defects [27]. There were three distinct slopes in the different temperature regimes: 100-230, 240-295, and 310-400 K. Therefore, it is possible to determine the dominant conduction mechanisms for these three distinct temperature regions by applying all possible conductivity mechanism models, calculating the slope of the conductivity versus temperature plot in the straight line region, and determining the maximum correlation coefficient (R 2 ) of the best fit [28,29]. The analysis of the high temperature region (in 310-400 K) was given in Fig.…”

Section: Resultsmentioning

confidence: 99%

Characterization of Co-evaporated Cu-Ag-In-Se Thin Films

2014

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In this study, annealing effect on the structural, electrical, and optical characteristics of the quaternary CuAg-In-Se (CAIS) thin films was investigated. These samples were deposited by co-evaporation of the Cu, Ag, In 2 Se 3 , and Se sources at the substrate temperature of 300°C. The structural properties of the thin films were analyzed by means of Xray diffraction, and the results indicated that all of the films were in the polycrystalline structure with the preferred orientation along (112) direction. From the optical measurements, the band gap values were found to vary between 1.38 and 1.45 eV with annealing processes. The temperature-dependent electrical conductivity of the samples was measured in the temperature range of 90-400 K. The films gained degenerate behavior with increasing annealing temperature. The carrier conduction mechanism was determined at high-and lowtemperature regions by comparing thermionic emission and hopping parameters. Photoconductivity of the as-grown film showed that there was an increase in conductivity with increasing illumination intensity. From this measurement, the variation of photocurrent as a function of illumination intensity was determined.

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Section: Resultsmentioning

confidence: 99%

Characterization of Co-evaporated Cu-Ag-In-Se Thin Films

2014

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“…In this study, light soaking and air-annealing 11,17 were not performed prior to the J-V measurements. The CdS buffer layers were grown at 60 C by chemical bath deposition, 5 and the ZnO:Al/ZnO window layers were deposited without intentional substrate heating by rf-magnetron sputtering.…”

Section: Methodsmentioning

confidence: 99%

Influence of copper to indium atomic ratio on the properties of Cu–In–Te based thin-film solar cells prepared by low-temperature co-evaporation

Mise

Nakada

2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The influence of copper to indium atomic ratio (Cu/In) on the properties of Cu–In–Te based thin films and solar cells was investigated. The films (Cu/In = 0.38–1.17) were grown on both bare and Mo-coated soda-lime glass substrates at 250 °C by single-step co-evaporation using a molecular beam epitaxy system. Highly (112)-oriented CuInTe2 films were obtained at Cu/In ratios of 0.84–0.99. However, stoichiometric and Cu-rich films showed a poor film structure with high surface roughness. The films consist of polyhedron-shaped grains, which are related to the coexistence of a Cu2−xTe phase, and significant evidence for the coexistence of the Cu2−xTe phase in the stoichiometric and Cu-rich films is presented. KCN treatment was performed for the films in order to remove the Cu2−xTe phase. The stoichiometric CuInTe2 thin films exhibited a high mobility above 50 cm2/V s at room temperature after the KCN treatment. A preliminary solar cell fabricated using a 1.4-μm-thick Cu-poor CuInTe2 thin film (Cu/In = 0.84, Eg = 0.988 eV) yielded a total-area efficiency of 2.10%. The photovoltaic performance of the cell was improved after long-term ambient aging in dark conditions.

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“…The values of the energy bands have a significant impact on the semiconductor optoelectronic properties, and were calculated according to the algorithms presented by Mise and Nakada [51] and Gao [52].…”

Section: Optical Properties and Photocatalytic Activitymentioning

confidence: 99%