Low-Temperature Growth and Photoluminescence Property of ZnS Nanoribbons

Abstract

At a low temperature of 450 degrees C, ZnS nanoribbons have been synthesized on Si and KCl substrates by a simple chemical vapor deposition (CVD) method with a two-temperature-zone furnace. Zinc and sulfur powders are used as sources in the different temperature zones. X-ray diffraction (XRD), selected area electron diffraction (SEAD), and transmission electron microscopy (TEM) analysis show that the ZnS nanoribbons are the wurtzite structure, and there are two types-single-crystal and bicrystal nanoribbons. Photoluminescence (PL) spectrum shows that the spectrum mainly includes two parts: a purple emission band centering at about 390 nm and a blue emission band centering at about 445 nm with a weak green shoulder around 510 nm.

Optimized doping concentration of manganese in zinc sulfide nanoparticles for yellow-orange light emission

“…As a result, the energy difference between the 4 T 1 state and the 6 A 1 state decreases. Therefore, PL emission will shift from yellow to red [32,35,30]. The third explanation is based on the nonradiation energy transfer in Mn clusters, an exchange mechanism leads to the excited Mn 2+ ion resonantly transferring its energy to its neighbors, until a red center is encountered [15,32].…”

Visible emission characteristics from different defects of ZnS nanocrystals

“…14 A near-UV emission band at about 400 nm is observed from ZnS nanowires, 15 nanobelts, 16 nanoribbons, 15,17 and multiangular branched nanostructures. 18 ZnS nanobelts 16 and nanoribbons 17 exhibit a blue emission band around 450 nm.…”

“…The luminescence features of ZnS are commonly assigned to surface states, 27,28 sulfur vacancies, 29,30 zinc vacancies, [31][32][33][34] elemental sulfur species 20,35 or impurities 17,36 in ZnS. However, it is still unclear what are the luminescent sites contributing to each of the luminescence bands.…”

Printable Single‐Crystal Silicon Micro/Nanoscale Ribbons, Platelets and Bars Generated from Bulk Wafers

“…The second, known as a top-down approach, uses specialized lithographic and etching procedures to create the wires/ribbons from bulk wafers or wafers with thin film stacks on their surfaces. The bottom-up approaches can create an impressive variety of structures, including nanoribbons, [4][5][6][7][8][9][10][11][12] nanomembranes, [13][14][15][16][17][18][19][20][21][22][23] nanowires, [24][25][26][27][28] and multicomponent heterostructured nanoelements. [29][30][31][32] These objects can be used individually or collectively as active layers for high-perforThis article demonstrates a method for fabricating high quality single-crystal silicon ribbons, platelets and bars with dimensions between ∼ 100 nm and ∼ 5 cm from bulk (111) wafers by using phase shift and amplitude photolithographic methods in conjunction with anisotropic chemical etching procedures.…”