Low-temperature growth and orientational control in RuO2 thin films by metal-organic chemical vapor deposition

Bai, G. R.; Wang, A.; Foster, C. M.; Vetrone, J.

doi:10.1016/s0040-6090(97)00353-2

Cited by 41 publications

(11 citation statements)

References 31 publications

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“…Single crystals of RuO 2 grown from Ru substrate mainly possess (101), (110), and (100) surfaces, − among which (110) is the most extensively investigated one due to its good electrocatalytic properties and relatively low surface free energy, 71 meV/Å 2 , compared with 77 and 87 meV/Å 2 for (101) and (100) surfaces, respectively . In this study, we only examine the (110) surface of RuO 2 .…”

Section: Methodsmentioning

confidence: 99%

Ab Initio Study of the Charge-Storage Mechanisms in RuO₂-Based Electrochemical Ultracapacitors

2011

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The charge-storage mechanisms in ruthenium dioxide are investigated with first-principles density-functional theory (DFT) calculations. Both proton-intercalated bulk and proton-adsorbed RuO2(110) surfaces have been studied to obtain insight into the energetics of discharging processes in RuO2-based aqueous supercapacitors. We predict the existence of a stable ruthenium oxyhydroxide (RuOOH) and demonstrate that the RuO2(110) surface as well as a significant fraction of the available subsurface sites remain completely protonated during cyclic voltammetry measurements in aqueous electrolytes. DFT calculations also show that the bulk proton insertion not only is kinetically inhibited by a high energy barrier of proton diffusion in bulk RuO2 (1.62 eV), but also is thermodynamically inactive under the experimental operating conditions due to a low intercalation voltage (0.08 V in the dilute limit). These results exclude simple bulk or surface protonation as the reason for excellent electrochemical performance of hydrous nanocrystalline RuO2 supercapacitors and point to the importance of subsurface and grain boundary effects.

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Section: Methodsmentioning

confidence: 99%

Ab Initio Study of the Charge-Storage Mechanisms in RuO₂-Based Electrochemical Ultracapacitors

2011

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“…CVD of Ru films was performed starting from Ru(Cp) 2 , Ru 3 (CO) 12 , Ru(acac) 2 , and Ru(hfb)(CO) 4 (Hacac=2,4-pentanedione; hfb = hexafluoro-2-butyne). − RuO 2 thin films have been obtained via CVD starting from Ru(acac) 3 , Ru(Cp) 2 ,, , Ru(tfa) 3 , and Ru(dpm) 3 ,, (Htfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione and Hdpm = 2,2,6,6-tetramethyl-3,5-heptanedione). In most of the cases, the growth temperatures were higher than 350 °C, and the precursor vaporization temperatures were around 100 °C.…”

Section: Introductionmentioning

confidence: 99%

A Ru(II) η³-Allylic Complex as a Novel Precursor for the CVD of Ru- and RuO₂-Nanostructured Thin Films

et al. 1999

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An η 3 -allylic complex of ruthenium(II) is used as a precursor for the chemical vapor deposition (CVD) of Ru and RuO2 thin films at low temperatures. The depositions are carried out on R-Al2O3 and surfaceoxidized Si(100) in N2, N2 + H2, N2 + O2, or O2 flow to tailor the film composition from pure metal Ru to RuO2. The microstructure features of the samples are analyzed by X-ray diffraction and Raman spectroscopy, whereas their surface composition is studied by X-ray photoelectron spectroscopy. Surface and in-depth analyses of the coatings are also performed by secondary ion mass spectrometry, which allows to distinguish the composition of different coating regions along their thickness. The surface morphology and its dependence on the synthesis conditions are investigated by atomic force microscopy. The electrical and optical studies confirm the metallic character of Ru and RuO2 films.

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“…The film deposited with Ar only shows ͑101͒, ͑002͒, and ͑100͒ peaks of Ru film but with the introduction of O 2 gas, the ͑101͒, ͑002͒, and ͑100͒ peaks of Ru film disappeared and ͑110͒, ͑101͒, and ͑200͒ peaks of RuO 2 film were observed. 6,7 The chemical bonding state of Ru 3d and O 1s orbital in the Ru and RuO 2 films deposited at ͑Ar: O 2 =50:0͒ and ͑Ar: O 2 =40:10͒ were investigated using x-ray photoemission spectroscopy ͑XPS͒ measurement as shown in Figs. 2͑b͒ and 2͑c͒.…”

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confidence: 99%

In situ ultraviolet photoemission spectroscopy measurement of the pentacene-RuO2/Ti contact energy structure

Yun

Lee

Yong

et al. 2010

Applied Physics Letters

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Low-temperature growth and orientational control in RuO2 thin films by metal-organic chemical vapor deposition

Cited by 41 publications

References 31 publications

Ab Initio Study of the Charge-Storage Mechanisms in RuO₂-Based Electrochemical Ultracapacitors

Ab Initio Study of the Charge-Storage Mechanisms in RuO₂-Based Electrochemical Ultracapacitors

A Ru(II) η³-Allylic Complex as a Novel Precursor for the CVD of Ru- and RuO₂-Nanostructured Thin Films

In situ ultraviolet photoemission spectroscopy measurement of the pentacene-RuO2/Ti contact energy structure

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Low-temperature growth and orientational control in RuO2 thin films by metal-organic chemical vapor deposition

Cited by 41 publications

References 31 publications

Ab Initio Study of the Charge-Storage Mechanisms in RuO2-Based Electrochemical Ultracapacitors

Ab Initio Study of the Charge-Storage Mechanisms in RuO2-Based Electrochemical Ultracapacitors

A Ru(II) η3-Allylic Complex as a Novel Precursor for the CVD of Ru- and RuO2-Nanostructured Thin Films

In situ ultraviolet photoemission spectroscopy measurement of the pentacene-RuO2/Ti contact energy structure

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Product

Resources

About

Ab Initio Study of the Charge-Storage Mechanisms in RuO₂-Based Electrochemical Ultracapacitors

Ab Initio Study of the Charge-Storage Mechanisms in RuO₂-Based Electrochemical Ultracapacitors

A Ru(II) η³-Allylic Complex as a Novel Precursor for the CVD of Ru- and RuO₂-Nanostructured Thin Films