Low temperature formation of high-quality crystalline Ge (1 1 1) by improving Au catalyst crystallinity

Sumi, K.; Shimizu, Noboru; Takakura, Kenichiro; Tsunoda, Isao

doi:10.1016/j.jcrysgro.2021.126270

Cited by 1 publication

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“…Using gold (Au) as a metal catalyst has a significant advantage in terms of low-temperature crystallization (∼200 °C) compared with the SPC process. [12][13][14][15][16][17][18][19] In particular, we have developed lowtemperature stress-stimulated Au-induced lateral crystallization of amorphous Ge, and reported that the lateral crystallization velocity is drastically enhanced compared with conventional Au-induced lateral crystallization. 12) Moreover, MILC for various metal catalysts (gold, nickel, aluminum) of amorphous Ge has been reported.…”

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confidence: 99%

Enhancement of Mg-induced lateral crystallization of amorphous germanium on an insulating substrate by two-step annealing

Morimoto,

Hirai,

Takazaiku

et al. 2024

Jpn. J. Appl. Phys.

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Magnesium (Mg) induced lateral crystallization (Mg-ILC) of amorphous Ge on SiO2 stacked structure was investigated. From Raman mapping images, the critical annealing temperature necessary to induce Mg-ILC of amorphous Ge was estimated to be about 350 oC. Furthermore, the Mg-ILC length was truly narrow (~ 2 µm) compared with other metal catalyst after annealing at 350 oC for 1hour. To enhance the Mg-ILC, we have examined a two-step annealing method for Mg-ILC of amorphous Ge on SiO2. The Mg-ILC length is significantly enhanced (~ 4.5 times) by using a two-step annealing process, which is due to the enhancement of Mg diffusion into amorphous Ge during the first stage low temperature annealing.

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