Low temperature formation of CuIn 1−x Ga x Se 2 solar cell absorbers by all printed multiple species nanoparticulate Se + Cu–In + Cu–Ga precursors

Möckel, Stefan; Wernicke, Tobias; Arzig, Matthias; Köder, Philipp; Brandl, Marco; Ahmad, Rameez; Distaso, Monica; Hock, Rainer; Wellmann, Peter J.

doi:10.1016/j.tsf.2014.11.060

Cited by 5 publications

(3 citation statements)

References 37 publications

(61 reference statements)

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“…These particles can be spin coated or doctor bladed on a substrate to form CISe during subsequent annealing at lower temperatures than in the stacked layer process [11,12]. This work shows the progress in the manufacturing and densification of a CISe absorber layer using nanoparticles and different heat treatment techniques.…”

Section: Introductionmentioning

confidence: 95%

Processing and Characterization of Vacuum-Free CuInSe2 Thin Films from Nanoparticle-Precursors using Novel Temperature Treatment Techniques

Schuster¹,

Sisterhenn²,

Gräf³

et al. 2018

IJRN

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The objective of this work is the processing and characterization of a dense CuInSe2 solar-cell-absorber-layer based on nanoparticulate precursors. Bimetallic copper-indium-and elemental selenium-nanoparticles were synthesized by wetchemical processes and then dispersed in organic solvents as nano-inks. These inks were then printed into different layerstacks on a molybdenum coated float-glass-substrate via doctorblading. The temperature treatment to transform these layerstacks into dense CISe thin films was investigated, using a faceto-face technique and mechanically applied pressure or the repetition of coating and annealing. All absorber layers were characterized with SEM, EDX and XRD. Dense, coarse grained CuInSe2 layers with a thickness ≈ 7 µm were formed and the application of mechanical pressure shows potential to reduce thickness and sinter together the nanoparticles to large grains of ca. 3 µm in size. The face-to-face-annealing ensured keeping a stoichiometric ratio of (Cu+In) / Se ≈ 1, and can help reducing

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Section: Introductionmentioning

confidence: 95%

Processing and Characterization of Vacuum-Free CuInSe2 Thin Films from Nanoparticle-Precursors using Novel Temperature Treatment Techniques

Schuster¹,

Sisterhenn²,

Gräf³

et al. 2018

IJRN

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“…So far, these approaches lead to a poor intermixture of Se and Cu-In [15]. Recent research was conducted on all-printable precursors using bimetallic Cu-In nanoparticles [16]. Such precursors may be mixed and subsequently printed, leading to a well distributed (Cu+In):Se ratio.…”

Section: Introductionmentioning

confidence: 99%

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2016

Int J Nanoparticles Nanotech

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“…approaches lead to a poor intermixture of Se and Cu-In [15]. Recent research was conducted on all-printable precursors using bimetallic Cu-In nanoparticles [16]. Such precursors may be mixed and subsequently printed, leading to a well distributed (Cu+In):Se ratio.…”

mentioning

confidence: 99%

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2016

Int J Nanoparticles Nanotech

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Highlights-Evaluation of PVP vs. TX100 micelles as particle stabilizer -Determination of Se concentration in dispersion via UV/VIS spectroscopy -Determination of molar extinction coefficient of colloidal Selenium IntroductionCuInSe 2 (CISe) materials have become very attractive as absorber layer for thin film solar cells, due to a suitable band gap, a high extinction coefficient and good materials stability [1][2][3][4][5]. Different approaches to produce CISe via co-evaporation, pulsed Laser deposition or sputtering have been reported [6][7][8]. Due to process complexity and the problem of scaling up the process various nonvacuum approaches have been suggested: the Selenium integrated by annealing a Cu-In-precursor under H 2 Se and N 2 atmosphere at a temperature of ~ 450°C [9]. This procedure holds highly toxic H 2 Se and is potentially explosive, due to free hydrogen. Therefore the preparation of a solid Se film via sputtering, electrochemical deposition or evaporation has been considered [10][11][12][13][14]. So far, these

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Low temperature formation of CuIn 1−x Ga x Se 2 solar cell absorbers by all printed multiple species nanoparticulate Se + Cu–In + Cu–Ga precursors

Cited by 5 publications

References 37 publications

Processing and Characterization of Vacuum-Free CuInSe2 Thin Films from Nanoparticle-Precursors using Novel Temperature Treatment Techniques

Processing and Characterization of Vacuum-Free CuInSe2 Thin Films from Nanoparticle-Precursors using Novel Temperature Treatment Techniques

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